公开(公告)号：US20230379176A1

公开(公告)日：2023-11-23

申请号：US18030456

申请日：2021-08-24

Applicant: LG ELECTRONICS INC.

Inventor： Eujin HWANG ,  Sangduk YU ,  Sanghoon CHOI ,  Kwangchoong KIM ,  Sungwoon MOON ,  Sungwook HWANG

IPC: H04L9/32

CPC classification number: H04L9/3278

Abstract: A physically unclonable device according to an embodiment of the present disclosure comprises: a plurality of inverters disposed on a first path to which a first signal is input; a plurality of inverters disposed on a second path to which a second signal is input; a first MOS capacitor disposed on the first path; and a second MOS capacitor disposed on the second path, wherein a first voltage is applied to a MOS capacitor located on the path corresponding to whichever of the first signal or the second signal arrives later at an output terminal of the first path or an outer terminal of the second path. Accordingly, a physically unclonable device that does not require separate error correction can be achieved.

公开(公告)号：US20150200257A1

公开(公告)日：2015-07-16

申请号：US14589730

申请日：2015-01-05

Applicant: LG Electronics Inc.

Inventor： Junho KIM ,  Seongmoo CHO ,  Taehoon JANG ,  Eujin HWANG ,  Jaemoo KIM

IPC: H01L29/205 ,  H01L29/20 ,  H01L21/02 ,  H01L29/778

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/207 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7786

Abstract: A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SixNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.

Abstract translation: 氮化物半导体功率器件包括沿着沉积方向具有可变的Al组成的AlGaN多层和SixNy层，以便最小化在制造异质结型时产生的漏电流的增加和击穿电压的降低 HFET器件。 半导体器件包括缓冲层，形成在缓冲层上的AlGaN多层，形成在AlGaN多层上的GaN沟道层和形成在AlGaN多层上的AlGaN阻挡层，其中AlGaN多层的铝（Al）组成沿着 沉积AlGaN多层的方向。