公开(公告)号：US20230060069A1

公开(公告)日：2023-02-23

申请号：US17797224

申请日：2020-02-06

Applicant: LG ELECTRONICS INC.

Inventor： Hojung LEE ,  Seung Yup JANG ,  Jaemoo KIM

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/10 ,  H01L21/04 ,  H01L29/66

Abstract: The present disclosure relates to: a MOSFET device which is applicable to a semiconductor device and, particularly, is manufactured using silicon carbide; and a manufacturing method therefor. The present disclosure provides a metal-oxide-semiconductor field effect transistor device which may comprise: a drain electrode; a substrate disposed on the drain electrode; an N-type drift layer disposed on the substrate; a plurality of P-type well layer regions disposed on the drift layer and spaced apart from each other to define a channel; an N+ region disposed on the well layer regions and adjacent to the channel; a P+ region disposed at the other side of the channel; a gate oxide layer disposed on the drift layer; a gate layer disposed on the gate oxide layer; and a source electrode disposed on the gate layer.

公开(公告)号：US20150200257A1

公开(公告)日：2015-07-16

申请号：US14589730

申请日：2015-01-05

Applicant: LG Electronics Inc.

Inventor： Junho KIM ,  Seongmoo CHO ,  Taehoon JANG ,  Eujin HWANG ,  Jaemoo KIM

IPC: H01L29/205 ,  H01L29/20 ,  H01L21/02 ,  H01L29/778

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/207 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7786

Abstract: A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SixNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.

Abstract translation: 氮化物半导体功率器件包括沿着沉积方向具有可变的Al组成的AlGaN多层和SixNy层，以便最小化在制造异质结型时产生的漏电流的增加和击穿电压的降低 HFET器件。 半导体器件包括缓冲层，形成在缓冲层上的AlGaN多层，形成在AlGaN多层上的GaN沟道层和形成在AlGaN多层上的AlGaN阻挡层，其中AlGaN多层的铝（Al）组成沿着 沉积AlGaN多层的方向。

公开(公告)号：US20240014255A1

公开(公告)日：2024-01-11

申请号：US17758339

申请日：2020-01-03

Applicant: LG ELECTRONICS INC.

Inventor： Seung Yup JANG ,  Jaemoo KIM ,  Hojung LEE

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0607 ,  H01L29/1608 ,  H01L29/7811 ,  H01L29/66712

Abstract: The present disclosure relates to: a MOSFET device that is applicable to a semiconductor device and, particularly, is manufactured from silicon carbide; and a manufacturing method therefor. The present disclosure relates to a metal-oxide-semiconductor field-effect transistor device capable of comprising: a drain electrode; a substrate located on the drain electrode; an N-type drift layer located on the substrate; a first current spreading layer which is located on the drift layer and which has a first doping concentration; P-type wells located on the first current spreading layer, and spaced from each other so as to define a channel; a second current spreading layer which is located between the wells and which has a second doping concentration that is higher than the first doping concentration; a gate oxide layer located on the second current spreading layer and the wells; and a source electrode located on the gate oxide layer.

公开(公告)号：US20220406889A1

公开(公告)日：2022-12-22

申请号：US17758907

申请日：2020-01-16

Applicant: LG ELECTRONICS INC.

Inventor： Hojung LEE ,  Seung Yup JANG ,  Jaemoo KIM

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78

Abstract: The present disclosure can be applied to semiconductor devices and, in particular, relates to a MOSFET device made of silicon carbide and a method for manufacturing same. A metal-oxide film semiconductor field-effect transistor device of the present disclosure may comprise: a drain electrode; a substrate arranged on the drain electrode; an N-type drift layer arranged on the substrate; a current-spreading layer arranged on the drift layer; P-type well layers arranged on the current-spreading layer to define a channel; an N+ region arranged on the well layers; a damage prevention layer adjacent to the N+ region and having a lower N-type doping concentration than that of the N+ region; a P+ region arranged on one side of the channel; a gate oxide layer arranged on the current-spreading layer; a gate layer arranged on the gate oxide layer; and a source electrode arranged on the gate layer.