公开(公告)号：US20140306181A1

公开(公告)日：2014-10-16

申请号：US14251717

申请日：2014-04-14

Applicant: LG ELECTRONICS INC.

Inventor： Jonghoon SHIN ,  Woongsun KIM ,  Taehoon JANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7783 ,  H01L21/02241 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

Abstract: This specification relates to an enhancement-type semiconductor device having a passivation layer formed using a photoelectrochemical (PEC) method, and a fabricating method thereof. To this end, a semiconductor device according to one exemplary embodiment includes a GaN layer, an AlGaN layer formed on the GaN layer, a p-GaN layer formed on the AlGaN layer, a gate electrode formed on the p-GaN layer, a source electrode and a drain electrode formed on a partial region of the AlGaN layer, and a passivation layer formed on a partial region of the AlGaN layer, the passivation layer formed between the source electrode and the gate electrode or between the gate electrode and the drain electrode, wherein the passivation layer is formed in a manner of oxidizing a part of the p-GaN layer. DC 51111930.1

Abstract translation: 本说明书涉及具有使用光电化学（PEC）方法形成的钝化层的增强型半导体器件及其制造方法。 为此，根据一个示例性实施例的半导体器件包括GaN层，形成在GaN层上的AlGaN层，在AlGaN层上形成的p-GaN层，形成在p-GaN层上的栅电极，源极 电极和形成在AlGaN层的部分区域上的漏电极，以及形成在所述AlGaN层的部分区域上的钝化层，所述钝化层形成在所述源电极和所述栅电极之间或所述栅电极与所述漏电极之间 ，其中所述钝化层以氧化所述p-GaN层的一部分的方式形成。 DC 51111930.1

公开(公告)号：US20150200257A1

公开(公告)日：2015-07-16

申请号：US14589730

申请日：2015-01-05

Applicant: LG Electronics Inc.

Inventor： Junho KIM ,  Seongmoo CHO ,  Taehoon JANG ,  Eujin HWANG ,  Jaemoo KIM

IPC: H01L29/205 ,  H01L29/20 ,  H01L21/02 ,  H01L29/778

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/207 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7786

Abstract: A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SixNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.

Abstract translation: 氮化物半导体功率器件包括沿着沉积方向具有可变的Al组成的AlGaN多层和SixNy层，以便最小化在制造异质结型时产生的漏电流的增加和击穿电压的降低 HFET器件。 半导体器件包括缓冲层，形成在缓冲层上的AlGaN多层，形成在AlGaN多层上的GaN沟道层和形成在AlGaN多层上的AlGaN阻挡层，其中AlGaN多层的铝（Al）组成沿着 沉积AlGaN多层的方向。