公开(公告)号：US20160197204A1

公开(公告)日：2016-07-07

申请号：US14988513

申请日：2016-01-05

Applicant: LG ELECTRONICS INC.

Inventor： Seungjik LEE ,  Kwangsun JI ,  Yujin LEE ,  Sehwon AHN

IPC: H01L31/0288 ,  H01L31/077 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/036

CPC classification number: H01L31/022441 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a crystalline semiconductor substrate containing impurities of a first conductive type, a tunnel layer positioned on the crystalline semiconductor substrate, a semiconductor layer which is formed on the tunnel layer, has a crystallinity less than the crystalline semiconductor substrate, and includes a first doped region of a second conductive type opposite the first conductive type and a second doped region containing impurities of the first conductive type at a higher concentration than that of the crystalline semiconductor substrate, a first electrode connected to the first doped region, and a second electrode connected to the second doped region.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型杂质的晶体半导体衬底，位于晶体半导体衬底上的隧道层，在隧道层上形成的半导体层的结晶度小于结晶半导体衬底，并且包括 具有与第一导电类型相反的第二导电类型的第一掺杂区和比第一掺杂区连接的第一电极和第二掺杂区，第二掺杂区含有比第一掺杂区连接的第一电极的第一导电类型的杂质更高的浓度; 电极连接到第二掺杂区域。

公开(公告)号：US20140360571A1

公开(公告)日：2014-12-11

申请号：US14297330

申请日：2014-06-05

Applicant: LG ELECTRONICS INC

Inventor： Kwangsun JI ,  Seungjik LEE ,  Sehwon AHN

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L21/3003 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: A manufacturing method of a solar cell is discussed. The manufacturing method of the solar cell includes forming a tunneling layer on one surface of a semiconductor substrate, forming a semiconductor layer on the tunneling layer, doping the semiconductor layer with a first conductive dopant and a second conductive dopant to form a first conductive semiconductor layer and a second conductive semiconductor layer, and diffusing hydrogen into the first and second conductive semiconductor layers to hydrogenate the first and second conductive semiconductor layers.

Abstract translation: 讨论太阳能电池的制造方法。 太阳能电池的制造方法包括在半导体衬底的一个表面上形成隧道层，在隧道层上形成半导体层，用第一导电掺杂剂和第二导电掺杂剂掺杂半导体层，以形成第一导电半导体层 和第二导电半导体层，并且将氢扩散到第一和第二导电半导体层中以氢化第一和第二导电半导体层。

公开(公告)号：US20140311558A1

公开(公告)日：2014-10-23

申请号：US14243560

申请日：2014-04-02

Applicant: LG ELECTRONICS INC.

Inventor： Seungjik LEE ,  Sehwon AHN

IPC: H01L31/068 ,  H01L31/18

CPC classification number: H01L31/0682 ,  H01L31/035281 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a semiconductor substrate containing impurities of a first conductive type, a back surface field region which is positioned on a back surface of the semiconductor substrate and is doped more than the semiconductor substrate with impurities of the first conductive type, an emitter region which is on the back surface of the semiconductor substrate adjacent to the back surface field region and contains impurities of a second conductive type different than the first conductive type, a metal layer which contains impurities of the second conductive type and on a back surface of the emitter region, a back passivation layer exposing a portion of the back surface field region and a portion of the metal layer.

Abstract translation: 太阳能电池包括含有第一导电类型杂质的半导体衬底，位于半导体衬底的背面上的背面场区域，并且掺杂多于具有第一导电类型杂质的半导体衬底，发射极区域 其位于与背面场区域相邻的半导体衬底的背面上，并且包含不同于第一导电类型的第二导电类型的杂质，含有第二导电类型的杂质的金属层和在第二导电类型的背面上的金属层 发射极区域，暴露背面场区域的一部分和金属层的一部分的背面钝化层。

公开(公告)号：US20190334041A1

公开(公告)日：2019-10-31

申请号：US16506644

申请日：2019-07-09

Applicant: LG ELECTRONICS, INC.

Inventor： Yujin LEE ,  Kwangsun JI ,  Seungjik LEE ,  Sehwon AHN

IPC: H01L31/0224 ,  H01L31/0368 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/0312 ,  H01L31/20 ,  H01L31/0376 ,  H01L31/0747

Abstract: A method for manufacturing a solar cell can include forming a tunnel layer on a back surface of a semiconductor substrate; forming an amorphous silicon layer on the tunnel layer; crystallizing the amorphous silicon layer into a crystalline silicon layer; performing a diffusion process to form a doped region in the crystalline silicon layer; forming an insulating layer on the crystalline silicon layer; and forming an electrode contacting with the crystalline silicon layer through an opening of the insulating layer.

公开(公告)号：US20150214396A1

公开(公告)日：2015-07-30

申请号：US14572284

申请日：2014-12-16

Applicant: LG ELECTRONICS INC.

Inventor： Yujin LEE ,  Kwangsun JI ,  Seungjik LEE ,  Sehwon AHN

IPC: H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0312

Abstract: A solar cell and a method for manufacturing the same are discussed. The method for manufacturing the solar cell includes forming an amorphous silicon layer on a back surface of a crystalline semiconductor substrate containing impurities of a first conductive type, performing a first diffusion process for diffusing impurities of a second conductive type opposite the first conductive type into a portion of the amorphous silicon layer to form an emitter region, and performing a second diffusion process for diffusing impurities of the first conductive type into a remaining portion except the portion of the amorphous silicon layer having the impurities of the second conductive type to form a back surface field region. When at least one of the first diffusion process and the second diffusion process is performed, the amorphous silicon layer is crystallized to form a silicon layer.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池的制造方法包括在包含第一导电类型的杂质的结晶半导体衬底的背面上形成非晶硅层，进行第一扩散处理，将与第一导电类型相反的第二导电类型的杂质扩散为 并且进行第二扩散处理，用于将第一导电类型的杂质扩散到除了具有第二导电类型的杂质的非晶硅层的部分之外的剩余部分中以形成背面 表面场区域。 当执行第一扩散处理和第二扩散处理中的至少一个时，非晶硅层被结晶以形成硅层。