公开(公告)号：US20160225940A1

公开(公告)日：2016-08-04

申请号：US15097897

申请日：2016-04-13

Applicant: LG ELECTRONICS INC.

Inventor： Sunho KIM ,  Heonmin LEE ,  Kwangsun JI ,  Youngjoo EO ,  Junghoon CHOI ,  Sehwon AHN

IPC: H01L31/20 ,  H01L31/18

CPC classification number: H01L31/03762 ,  C25D7/126 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/1884 ,  H01L31/20 ,  H01L31/202 ,  H05K3/188 ,  H05K3/246 ,  H05K2201/0108 ,  H05K2201/0326 ,  Y02E10/50

Abstract: Discussed is a method of manufacturing a solar cell including preparing a single crystalline silicon substrate having a first conductive type impurity; forming a non-single crystalline silicon emitter layer having a second conductive type impurity opposite to the first conductive type impurity on a first surface of the single crystalline silicon substrate; forming a first transparent conductive oxide layer on the first surface of the single crystalline silicon substrate; forming a first electrode electrically connected to the first transparent conductive oxide layer; and forming a second electrode electrically connected to the single crystalline silicon substrate, wherein the forming of the first electrode includes; forming a first seed layer on the first transparent conductive oxide layer, and forming a first plating layer over the first seed layer by plating a first conductive material.

Abstract translation: 讨论了制造太阳能电池的方法，包括制备具有第一导电类型杂质的单晶硅衬底; 在单晶硅衬底的第一表面上形成具有与第一导电类型杂质相反的第二导电类型杂质的非单晶硅发射极层; 在单晶硅衬底的第一表面上形成第一透明导电氧化物层; 形成与第一透明导电氧化物层电连接的第一电极; 以及形成与所述单晶硅衬底电连接的第二电极，其中所述第一电极的形成包括： 在所述第一透明导电氧化物层上形成第一晶种层，以及通过镀覆第一导电材料在所述第一晶种层上形成第一镀层。

公开(公告)号：US20150303319A1

公开(公告)日：2015-10-22

申请号：US14754370

申请日：2015-06-29

Applicant: LG ELECTRONICS INC.

Inventor： Hojung SYN ,  Hyunjin YANG ,  Junghoon CHOI ,  Youngjoo EO

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/20

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0747 ,  H01L31/202 ,  Y02E10/50 ,  Y02E10/52

Abstract: A back contact solar cell and a method for manufacturing the back contact solar cell are discussed. The back contact solar cell includes a substrate made of crystalline silicon having a first conductivity type, a passivation layer on one side of the substrate, an antireflection layer on the passivation layer, a first electrode on the other side of the substrate, a second electrode on the other side of the substrate and separated from the first electrode, a first semiconductor layer disposed between the first electrode and the substrate and having the first conductivity type, and a second semiconductor layer disposed between the second electrode and the substrate and having a second conductivity type that is opposite to the first conductivity type. The passivation layer includes at least one of amorphous silicon oxide and amorphous silicon carbide.

Abstract translation: 讨论了背接触太阳能电池和背接触太阳能电池的制造方法。 背接触太阳能电池包括由基底导电类型的晶体硅构成的衬底，衬底一侧上的钝化层，钝化层上的抗反射层，衬底另一侧的第一电极，第二电极 在所述基板的另一侧并且与所述第一电极分离，设置在所述第一电极和所述基板之间并且具有所述第一导电类型的第一半导体层，以及设置在所述第二电极和所述基板之间的第二半导体层， 导电类型与第一导电类型相反。 钝化层包括非晶硅氧化物和非晶碳化硅中的至少一种。

公开(公告)号：US20190355860A1

公开(公告)日：2019-11-21

申请号：US16530701

申请日：2019-08-02

Applicant: LG ELECTRONICS INC.

Inventor： Hyungseok KIM ,  Kwangsun JI ,  Youngjoo EO ,  Heonmin LEE ,  Choul KIM ,  Hojung SYN ,  Wonseok CHOI ,  Kihoon PARK ,  Junghoon CHOI ,  Hyunjin YANG

IPC: H01L31/0747 ,  H01L31/0216

Abstract: A solar cell can include a single crystalline semiconductor substrate; an emitter region positioned on an incident surface of the substrate, forming a p-n junction with the single crystalline semiconductor substrate; a first passivation layer positioned on a rear surface of the substrate and made of an oxide material; a back surface field layer positioned on the first passivation layer and forming a hetero junction with the single crystalline semiconductor substrate; a first electrode electrically connected to the emitter region; and a second electrode electrically connected to the single crystalline semiconductor substrate

公开(公告)号：US20160233359A1

公开(公告)日：2016-08-11

申请号：US15097870

申请日：2016-04-13

Applicant: LG ELECTRONICS INC.

Inventor： Sunho KIM ,  Heonmin LEE ,  Kwangsun JI ,  Youngjoo EO ,  Junghoon CHOI ,  Sehwon AHN

IPC: H01L31/0376 ,  H01L31/0236 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/03762 ,  C25D7/126 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/1884 ,  H01L31/20 ,  H01L31/202 ,  H05K3/188 ,  H05K3/246 ,  H05K2201/0108 ,  H05K2201/0326 ,  Y02E10/50

Abstract: Discussed is a solar cell including a single crystalline semiconductor substrate having a first transparent conductive oxide layer positioned on a non-single crystalline emitter layer; a second transparent conductive oxide layer positioned over a rear surface of the single crystalline semiconductor substrate; a first electrode part including a first seed layer directly positioned on the first transparent conductive oxide layer; and a second electrode part including a second seed layer directly positioned on the second transparent conductive oxide layer, wherein the first transparent conductive oxide layer and the first seed layer have different conductivities, and wherein the second transparent conductive oxide layer and the second seed layer have different conductivities.

Abstract translation: 讨论了包括单晶半导体衬底的太阳能电池，其具有位于非单结晶体发射极层上的第一透明导电氧化物层; 位于单晶半导体衬底的后表面上的第二透明导电氧化物层; 第一电极部分，包括直接位于第一透明导电氧化物层上的第一籽晶层; 以及包括直接位于所述第二透明导电氧化物层上的第二籽晶层的第二电极部，其中所述第一透明导电氧化物层和所述第一种子层具有不同的导电性，并且其中所述第二透明导电氧化物层和所述第二种子层具有 不同的电导率。