公开(公告)号：US20170221783A1

公开(公告)日：2017-08-03

申请号：US15009692

申请日：2016-01-28

Applicant: Leonard TEDESCHI ,  Kartik RAMASWAMY

Inventor： Leonard TEDESCHI ,  Kartik RAMASWAMY

IPC: H01L21/66

CPC classification number: H01L22/34 ,  H01L22/26

Abstract: Embodiments include a self-aware substrate and methods for utilizing a self-aware substrate. In one embodiment, a method of processing a self-aware substrate may include initiating a processing operation on the self-aware substrate. The processing operation may be any processing operation used in the fabrication of functioning devices on a production substrate. The method may further include receiving output signals from one or more sensors on the self-aware substrate. In some embodiments, the one or more sensors are formed on non-production regions of the substrate. The method may further include comparing the output signals to an endpoint criteria that is associated with one or more processing conditions. For example, the endpoint criteria may be associated with processing conditions such as film thickness. The method may further include ending the processing operation when the endpoint criteria is satisfied.

公开(公告)号：US20170131217A1

公开(公告)日：2017-05-11

申请号：US14935186

申请日：2015-11-06

Applicant: Leonard TEDESCHI ,  Kartik RAMASWAMY

Inventor： Leonard TEDESCHI ,  Kartik RAMASWAMY

IPC: G01N21/94 ,  G01N21/95

CPC classification number: G01N21/94 ,  G01N21/9501 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/20

Abstract: Embodiments include devices and methods for detecting particles in a wafer processing tool. In an embodiment, a particle monitoring device having a wafer form factor includes several micro sensors capable of operating in all pressure regimes, e.g., under vacuum conditions. The particle monitoring device may include a clock to output a time value when a parameter of a micro sensor changes in response to receiving a particle within a chamber of the wafer processing tool. A location of the micro sensor or the time value may be used to determine a source of the particle. Other embodiments are also described and claimed.

公开(公告)号：US20170263511A1

公开(公告)日：2017-09-14

申请号：US15068464

申请日：2016-03-11

Applicant: Leonard TEDESCHI

Inventor： Leonard TEDESCHI

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/02

Abstract: Embodiments include devices and methods for detecting material deposition and material removal performed by a wafer processing tool. In an embodiment, one or more micro sensors mounted on a process chamber of the wafer processing tool are capable of operating under vacuum conditions and/or may measure material deposition and removal rates in real-time during a plasma-less wafer fabrication process. Other embodiments are also described and claimed.

公开(公告)号：US20150132959A1

公开(公告)日：2015-05-14

申请号：US14075971

申请日：2013-11-08

Applicant: Leonard TEDESCHI ,  Srinivas NEMANI

Inventor： Leonard TEDESCHI ,  Srinivas NEMANI

IPC: H01L21/308 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67213 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/0337 ,  H01L21/311 ,  H01L21/31144

Abstract: Embodiments involve patterned mask formation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; exposing the CVD film to e-beam or UV radiation, forming a pattern in the CVD film; and etching the pattern in the CVD film, forming features in areas not exposed to the e-beam or UV radiation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; depositing a thin photo-sensitive CVD hardmask film over the CVD film; exposing the thin photo-sensitive CVD hardmask film to e-beam or UV radiation, forming a pattern in the thin photo-sensitive CVD hardmask film; etching the pattern in the thin photo-sensitive CVD hardmask film; etching the pattern into the CVD film through the patterned thin photo-sensitive CVD hardmask film; and removing the patterned thin photo-sensitive CVD hardmask film.

Abstract translation: 实施例涉及图案化掩模形成。 在一个实施例中，一种方法包括在半导体晶片上沉积CVD膜; 将CVD膜暴露于电子束或UV辐射，在CVD膜中形成图案; 并蚀刻CVD膜中的图案，在不暴露于电子束或UV辐射的区域中形成特征。 在一个实施例中，一种方法包括在半导体晶片上沉积CVD膜; 在CVD膜上沉积薄的光敏CVD硬掩模膜; 将薄的光敏CVD硬掩模膜暴露于电子束或UV辐射，在薄的光敏CVD硬掩模膜中形成图案; 蚀刻薄光敏CVD硬掩模膜中的图案; 通过图案化的薄光敏CVD硬掩模膜将图案蚀刻到CVD膜中; 并去除图案化的光敏CVD硬掩模膜。