公开(公告)号：US20080026597A1

公开(公告)日：2008-01-31

申请号：US11753918

申请日：2007-05-25

Applicant: Jeffrey Munro ,  Srinivas Nemani

Inventor： Jeffrey Munro ,  Srinivas Nemani

IPC: H01L21/31

CPC classification number: H01L21/31633 ,  C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3105

Abstract: Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate. The atomic oxygen precursor is generated outside the reaction chamber. The methods also include heating the silicon oxide layer at a temperature of about 600° C. or less, and exposing the silicon oxide layer to an induced coupled plasma. Additional methods are described where the deposited silicon oxide layer is cured by exposing the layer to ultra-violet light, and also exposing the layer to an induced coupled plasma.

Abstract translation: 描述了在衬底上制造氧化硅层的方法。 所述方法可以包括通过使原子氧前体和硅前体反应并在基底上沉积反应产物，在反应室中的衬底上形成氧化硅层。 原子氧前体在反应室外产生。 所述方法还包括在约600℃或更低的温度下加热氧化硅层，并将氧化硅层暴露于感应耦合等离子体。 描述了通过将层暴露于紫外光而使沉积的氧化硅层固化并且还将该层暴露于感应耦合等离子体的附加方法。

公开(公告)号：US07176105B2

公开(公告)日：2007-02-13

申请号：US10858135

申请日：2004-06-01

Applicant: Srinivas Nemani ,  Shankar Venkataraman

Inventor： Srinivas Nemani ,  Shankar Venkataraman

IPC: H01L21/336 ,  H01L21/76 ,  H01L21/311

CPC classification number: H01L21/76229

Abstract: A thin layer of silicon is deposited within a high aspect ratio feature to provide a template for selective deposition of oxide therein. In accordance with one embodiment, amorphous silicon is deposited within a shallow trench feature overlying an oxide liner grown therein. After exposure to sputtering to remove the amorphous silicon from outside of the trench, oxide is selectively deposited over the amorphous silicon to fill the trench from the bottom up without voids, thereby creating a shallow trench isolation (STI) structure. Deposition of the amorphous silicon or other silicon containing layers allows the selective oxide deposition step to be integrated with a thermally-grown oxide trench liner.

Abstract translation: 在高纵横比特征中沉积薄层硅以提供用于在其中选择性沉积氧化物的模板。 根据一个实施例，在覆盖其中生长的氧化物衬垫的浅沟槽特征中沉积非晶硅。 在暴露于溅射之后从沟槽外部去除非晶硅时，氧化物被选择性地沉积在非晶硅之上，以从底部向上填充沟槽而无空隙，从而产生浅沟槽隔离（STI）结构。 非晶硅或其它含硅层的沉积允许选择性氧化物沉积步骤与热生长的氧化物沟槽衬里整合。

公开(公告)号：US20060198769A1

公开(公告)日：2006-09-07

申请号：US11408678

申请日：2006-04-21

Applicant: Himanshu Pokharna ,  Phong Le ,  Srinivas Nemani

Inventor： Himanshu Pokharna ,  Phong Le ,  Srinivas Nemani

IPC: B01D50/00 ,  B01D53/34

CPC classification number: C01B7/191 ,  B01D53/68 ,  B01D2251/202 ,  B01D2257/2027 ,  C23C16/4405 ,  C23C16/4412

Abstract: Method and apparatus for abating F2 from by-products generated during cleaning of a processing chamber. F2 abatement is efficiently performed by directly injecting H2 in line with a foreline exiting the processing chamber. A tube which is highly resistant to oxidation and corrosive gases, even at high temperature, is connected in line with the foreline as part of the exhaust line of the processing chamber. A cooling jacket may be provided for cooling the tube, since the reaction between F2 and H2 is exothermic. A pressure monitoring arrangement may also be employed to insure that pressure within a hydrogen line, that feeds the injection of H2 into the tube, does not exceed a predetermined pressure value.

Abstract translation: 用于在处理室清洁期间产生的副产物减轻F 2的方法和装置。 通过直接喷射与排出处理室的前级管线一致的H 2 2来有效地执行F 2 2减排。 即使在高温下，耐氧化和腐蚀性气体的管也与作为处理室的排气管线的一部分的前级管线连接。 可以提供冷却套管来冷却管，因为F 2和H 2 2之间的反应是放热的。 还可以采用压力监测装置来确保将管线内注入H 2 H的氢气管线内的压力不超过预定的压力值。

公开(公告)号：US20060141805A1

公开(公告)日：2006-06-29

申请号：US11358793

申请日：2006-02-21

Applicant: Srinivas Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

Inventor： Srinivas Nemani ,  Li-Qun Xia ,  Dian Sugiarto ,  Ellie Yieh ,  Ping Xu ,  Francimar Campana-Schmitt ,  Jia Lee

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/325 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76829 ,  Y10S438/931

Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

公开(公告)号：US20060046508A1

公开(公告)日：2006-03-02

申请号：US10931742

申请日：2004-09-01

Applicant: Srinivas Nemani ,  Young Lee

Inventor： Srinivas Nemani ,  Young Lee

IPC: H01L21/31

CPC classification number: H01L21/02164 ,  C23C16/401 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/0234

Abstract: A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is provided to the substrate processing chamber. A gaseous oxidizer is also flowed to the substrate processing chamber. A deposition plasma is generated inductively from the precursor and the oxidizer in the substrate processing chamber, and the silicon oxide film is deposited over the substrate and within the gap with the deposition plasma.

Abstract translation: 在设置在基板处理室中的基板上沉积氧化硅膜。 基板在相邻的凸起表面之间形成间隙。 液体Si-C-O-H前体蒸发。 蒸发的液体Si-C-O-H前体的流动被提供到基底处理室。 气态氧化剂也流到衬底处理室。 从衬底处理室中的前体和氧化剂感应地产生沉积等离子体，并且氧化硅膜沉积在衬底上并且与沉积等离子体在间隙内沉积。

公开(公告)号：US20050266655A1

公开(公告)日：2005-12-01

申请号：US10858135

申请日：2004-06-01

Applicant: Srinivas Nemani ,  Shankar Venkataraman

Inventor： Srinivas Nemani ,  Shankar Venkataraman

IPC: H01L21/76 ,  H01L21/762

CPC classification number: H01L21/76229

Abstract: A thin layer of silicon is deposited within a high aspect ratio feature to provide a template for selective deposition of oxide therein. In accordance with one embodiment, amorphous silicon is deposited within a shallow trench feature overlying an oxide liner grown therein. After exposure to sputtering to remove the amorphous silicon from outside of the trench, oxide is selectively deposited over the amorphous silicon to fill the trench from the bottom up without voids, thereby creating a shallow trench isolation (STI) structure. Deposition of the amorphous silicon or other silicon containing layers allows the selective oxide deposition step to be integrated with a thermally-grown oxide trench liner.

Abstract translation: 在高纵横比特征中沉积薄层硅以提供用于在其中选择性沉积氧化物的模板。 根据一个实施例，在覆盖其中生长的氧化物衬垫的浅沟槽特征中沉积非晶硅。 在暴露于溅射之后从沟槽外部去除非晶硅时，氧化物被选择性地沉积在非晶硅之上，以从底部向上填充沟槽而无空隙，从而产生浅沟槽隔离（STI）结构。 非晶硅或其它含硅层的沉积允许选择性氧化物沉积步骤与热生长的氧化物沟槽衬里整合。

公开(公告)号：US20050233576A1

公开(公告)日：2005-10-20

申请号：US11118678

申请日：2005-04-28

Applicant: Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas Nemani ,  Kangsub Yim ,  Farhad Moghadam ,  Ashok Sinha ,  Yi Zheng

Inventor： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas Nemani ,  Kangsub Yim ,  Farhad Moghadam ,  Ashok Sinha ,  Yi Zheng

IPC: C23C16/42 ,  C23C16/30 ,  C23C16/40 ,  C23C16/56 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/314

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

公开(公告)号：US06352591B1

公开(公告)日：2002-03-05

申请号：US09613934

申请日：2000-07-11

Applicant: Ellie Yieh ,  Li-Qun Xia ,  Srinivas Nemani

Inventor： Ellie Yieh ,  Li-Qun Xia ,  Srinivas Nemani

IPC: C23C1652

CPC classification number: C23C16/45565 ,  C23C16/0245 ,  C23C16/402 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/02362 ,  H01L21/2255 ,  H01L21/31612 ,  H01L21/31625

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract translation: 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

公开(公告)号：US06347636B1

公开(公告)日：2002-02-19

申请号：US09340602

申请日：1999-06-25

Applicant: Li-Qun Xia ,  Visweswaren Sivaramakrishnan ,  Srinivas Nemani ,  Ellie Yieh ,  Gary Fong

Inventor： Li-Qun Xia ,  Visweswaren Sivaramakrishnan ,  Srinivas Nemani ,  Ellie Yieh ,  Gary Fong

IPC: B08B600

CPC classification number: B08B7/0035 ,  C23C16/4405 ,  H01L21/67017 ,  Y10S438/905

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract translation: 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

公开(公告)号：US20080057740A1

公开(公告)日：2008-03-06

申请号：US11844810

申请日：2007-08-24

Applicant: Jeffrey Munro ,  Srinivas Nemani ,  Young Lee ,  Marlon Menezes ,  Christopher Bencher ,  Vijay Parihar

Inventor： Jeffrey Munro ,  Srinivas Nemani ,  Young Lee ,  Marlon Menezes ,  Christopher Bencher ,  Vijay Parihar

IPC: H01L21/00

CPC classification number: H01L21/268 ,  H01L21/26513

Abstract: Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.

Abstract translation: 公开了用于激活掺杂半导体衬底中的掺杂剂的方法。 碳前体流入其中设置掺杂半导体衬底的衬底处理室。 在基板处理室中由碳前体形成等离子体。 用等离子体沉积在衬底上的碳膜。 在沉积低于500℃的碳膜的同时保持基板的温度。沉积的碳膜暴露于电磁辐射小于10ms的时间段，并且在电磁波包括的波长处具有大于0.3的消光系数 辐射。