公开(公告)号：US20150132959A1

公开(公告)日：2015-05-14

申请号：US14075971

申请日：2013-11-08

Applicant: Leonard TEDESCHI ,  Srinivas NEMANI

Inventor： Leonard TEDESCHI ,  Srinivas NEMANI

IPC: H01L21/308 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67213 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/0337 ,  H01L21/311 ,  H01L21/31144

Abstract: Embodiments involve patterned mask formation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; exposing the CVD film to e-beam or UV radiation, forming a pattern in the CVD film; and etching the pattern in the CVD film, forming features in areas not exposed to the e-beam or UV radiation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; depositing a thin photo-sensitive CVD hardmask film over the CVD film; exposing the thin photo-sensitive CVD hardmask film to e-beam or UV radiation, forming a pattern in the thin photo-sensitive CVD hardmask film; etching the pattern in the thin photo-sensitive CVD hardmask film; etching the pattern into the CVD film through the patterned thin photo-sensitive CVD hardmask film; and removing the patterned thin photo-sensitive CVD hardmask film.

Abstract translation: 实施例涉及图案化掩模形成。 在一个实施例中，一种方法包括在半导体晶片上沉积CVD膜; 将CVD膜暴露于电子束或UV辐射，在CVD膜中形成图案; 并蚀刻CVD膜中的图案，在不暴露于电子束或UV辐射的区域中形成特征。 在一个实施例中，一种方法包括在半导体晶片上沉积CVD膜; 在CVD膜上沉积薄的光敏CVD硬掩模膜; 将薄的光敏CVD硬掩模膜暴露于电子束或UV辐射，在薄的光敏CVD硬掩模膜中形成图案; 蚀刻薄光敏CVD硬掩模膜中的图案; 通过图案化的薄光敏CVD硬掩模膜将图案蚀刻到CVD膜中; 并去除图案化的光敏CVD硬掩模膜。

公开(公告)号：US20150079301A1

公开(公告)日：2015-03-19

申请号：US14067851

申请日：2013-10-30

Applicant: Srinivas NEMANI ,  Ellie YIEH ,  Dmitry LUBOMIRSKY

Inventor： Srinivas NEMANI ,  Ellie YIEH ,  Dmitry LUBOMIRSKY

IPC: B05D1/02 ,  B05C5/02 ,  B05D3/06

CPC classification number: B05D1/02 ,  B05C5/0291 ,  B05D3/067 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/1245 ,  C23C18/125 ,  C23C18/1283 ,  C23C18/14 ,  H01L21/02178 ,  H01L21/02288 ,  H01L21/0332 ,  H01L21/6715

Abstract: Embodiments include systems, apparatuses, and methods of thin metal-organic film deposition with inkjet printheads. A method of depositing a metal-organic thin film over a substrate includes introducing chemical precursors into one or more piezoelectric printheads. The chemical precursors including a metallic compound and a reactive liquid or gas. The method further includes dispensing droplets or a stream of the chemical precursors with the piezoelectric printheads onto a surface of the substrate supported by a stage in a vacuum chamber.

Abstract translation: 实施例包括用喷墨打印头薄金属 - 有机膜沉积的系统，装置和方法。 在衬底上沉积金属 - 有机薄膜的方法包括将化学前体引入到一个或多个压电打印头中。 化学前体包括金属化合物和反应性液体或气体。 该方法还包括将液滴或化学前体物流与压电打印头分配到由真空室中的载物台支撑的基底表面上。

公开(公告)号：US20130105303A1

公开(公告)日：2013-05-02

申请号：US13651074

申请日：2012-10-12

Applicant: Dmitry LUBOMIRSKY ,  Srinivas NEMANI ,  Ellie YIEH ,  Sergey G. BELOSTOTSKIY

Inventor： Dmitry LUBOMIRSKY ,  Srinivas NEMANI ,  Ellie YIEH ,  Sergey G. BELOSTOTSKIY

IPC: C23F1/00

CPC classification number: H01L21/67069 ,  C23C16/0245 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32532 ,  H01J37/32587 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/6831

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

Abstract translation: 描述了用于蚀刻低k和其他电介质膜的方法和处理室。 例如，一种方法包括用等离子体处理来修改低k电介质层的部分。 选择性地在低k电介质层的掩模层和低k电介质层的未修改部分上蚀刻低k电介质层的改性部分。 描述了具有用于交替产生不同等离子体的多个室区的蚀刻室。 在实施例中，提供第一电荷耦合等离子体源以在一个操作模式中产生到工件的离子通量，而提供次级等离子体源以在另一个操作模式中提供反应物质通量，而不会对工件产生显着的离子通量。 控制器操作以随着时间重复地循环操作模式以去除期望的累积量的电介质材料。