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    SELF-AWARE PRODUCTION WAFERS
    3.
    发明申请
    SELF-AWARE PRODUCTION WAFERS 审中-公开

    公开(公告)号：US20170221783A1

    公开(公告)日：2017-08-03

    申请号：US15009692

    申请日：2016-01-28

    Applicant: Leonard TEDESCHI ,  Kartik RAMASWAMY

    Inventor： Leonard TEDESCHI ,  Kartik RAMASWAMY

    IPC: H01L21/66

    CPC classification number: H01L22/34 ,  H01L22/26

    Abstract: Embodiments include a self-aware substrate and methods for utilizing a self-aware substrate. In one embodiment, a method of processing a self-aware substrate may include initiating a processing operation on the self-aware substrate. The processing operation may be any processing operation used in the fabrication of functioning devices on a production substrate. The method may further include receiving output signals from one or more sensors on the self-aware substrate. In some embodiments, the one or more sensors are formed on non-production regions of the substrate. The method may further include comparing the output signals to an endpoint criteria that is associated with one or more processing conditions. For example, the endpoint criteria may be associated with processing conditions such as film thickness. The method may further include ending the processing operation when the endpoint criteria is satisfied.

    Plasma reactor with uniform process rate distribution by improved RF ground return path
    8.
    发明授权
    Plasma reactor with uniform process rate distribution by improved RF ground return path 有权
    等离子体反应器具有均匀的加工速率分布，通过改进的射频接地回路

    公开(公告)号：US08360003B2

    公开(公告)日：2013-01-29

    申请号：US12501966

    申请日：2009-07-13

    Applicant: Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

    Inventor： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

    IPC: C23C16/00 ,  H01L21/306

    CPC classification number: H01J37/16 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01L31/18

    Abstract: In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.

    Abstract translation: 在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。 等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度 在房间里 侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

    METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES
    9.
    发明申请
    METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES 有权
    用于执行多个光电层发展和蚀刻过程的方法和装置

    公开(公告)号：US20120322011A1

    公开(公告)日：2012-12-20

    申请号：US13455784

    申请日：2012-04-25

    Applicant: Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

    Inventor： Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

    IPC: G03F7/36

    CPC classification number: G03F7/36 ,  G03F7/40

    Abstract: The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

    Abstract translation: 本发明提供了控制和最小化显影过程中的工艺缺陷的方法和装置，并且在显影过程之后修改光致抗蚀剂层的线宽粗糙度（LWR），并且在随后的蚀刻工艺期间保持良好的轮廓控制。 在一个实施例中，用于在衬底上形成特征的方法包括通过主要使用电子来显影和去除设置在电子处理室中的衬底上的感光层中的暴露区域，通过主要使用电子从衬底去除污染物， 通过主要使用电子在电子处理室中由显影的感光层曝光的光敏聚合物层。

    Field enhanced inductively coupled plasma (Fe-ICP) reactor
    10.
    发明授权
    Field enhanced inductively coupled plasma (Fe-ICP) reactor 有权
    场增强电感耦合等离子体（Fe-ICP）反应器

    公开(公告)号：US08299391B2

    公开(公告)日：2012-10-30

    申请号：US12182342

    申请日：2008-07-30

    Applicant: Valentin N. Todorow ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

    Inventor： Valentin N. Todorow ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

    IPC: B23K10/00

    CPC classification number: H05H1/46 ,  H01J37/32091 ,  H01J37/321

    Abstract: Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.

    Abstract translation: 本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。 在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。 等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中， 或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。 在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间。

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