Pattern formation method
    1.
    发明申请
    Pattern formation method 审中-公开
    图案形成方法

    公开(公告)号:US20030091941A1

    公开(公告)日:2003-05-15

    申请号:US10164425

    申请日:2002-06-10

    IPC分类号: G03F007/00

    摘要: A resist film is formed by applying, on a semiconductor substrate, a resist material including at least one atom or group selected from the group consisting of a halogen atom, a cyano group, a nitro group, an alkoxy group, an amino group, an alkyl group, a trifluoromethyl group and a mercapto group. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure, and the resist film is developed after the pattern exposure, so as to form a resist pattern.

    摘要翻译: 通过在半导体衬底上施加包含至少一个选自卤原子,氰基,硝基,烷氧基,氨基, 烷基,三氟甲基和巯基。 用曝光的1nm〜180nm的波长的光照射抗蚀剂膜,进行图案曝光,在图案曝光后使抗蚀剂膜显影,形成抗蚀剂图案。