-
公开(公告)号:US20030091941A1
公开(公告)日:2003-05-15
申请号:US10164425
申请日:2002-06-10
发明人: Shinji Kishimura , Akiko Katsuyama , Masaru Sasago
IPC分类号: G03F007/00
CPC分类号: G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/108 , Y10S430/146
摘要: A resist film is formed by applying, on a semiconductor substrate, a resist material including at least one atom or group selected from the group consisting of a halogen atom, a cyano group, a nitro group, an alkoxy group, an amino group, an alkyl group, a trifluoromethyl group and a mercapto group. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure, and the resist film is developed after the pattern exposure, so as to form a resist pattern.
摘要翻译: 通过在半导体衬底上施加包含至少一个选自卤原子,氰基,硝基,烷氧基,氨基, 烷基,三氟甲基和巯基。 用曝光的1nm〜180nm的波长的光照射抗蚀剂膜,进行图案曝光,在图案曝光后使抗蚀剂膜显影,形成抗蚀剂图案。
-
公开(公告)号:US20030087184A1
公开(公告)日:2003-05-08
申请号:US10235945
申请日:2002-09-06
IPC分类号: G03F007/004 , G03F007/00
CPC分类号: C09D145/00 , C08F8/00 , C08F212/14 , C08F228/02 , C08F232/04 , C08F2800/10 , C08F2800/20 , C08K5/42 , C08L2203/206 , C09D141/00 , G03F7/0046 , G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/108 , C08L41/00
摘要: A pattern formation material of this invention contains a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: 1 wherein R1 and R2 are the same or different and selected from the group consisting of a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group and an alkyl group including a fluorine atom; R3 is a protecting group released by an acid; m is an integer of 0 through 5; and a and b satisfy 0
-
公开(公告)号:US20030091930A1
公开(公告)日:2003-05-15
申请号:US10241758
申请日:2002-09-12
IPC分类号: G03F007/038
CPC分类号: G03F7/0395 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要: A pattern formation material of this invention contains a base polymer including a unit represented by Chemical Formula 1 and an acid generator: 1 wherein R1 is a protecting group released by an acid.
摘要翻译: 本发明的图案形成材料含有包含由化学式1表示的单元和酸产生剂的基础聚合物:其中R1是被酸释放的保护基。
-
-