公开(公告)号：US20150382478A1

公开(公告)日：2015-12-31

申请号：US14767536

申请日：2013-02-12

Applicant: MEIKO ELECTRONICS CO., LTD.

Inventor： Hiroshi SHIMADA ,  Mitsuaki TODA ,  Tohru MATSUMOTO

IPC: H05K3/20 ,  C23F1/00 ,  H05K3/22 ,  H05K3/46 ,  H05K1/18 ,  H05K1/02

CPC classification number: H05K3/20 ,  C23F1/00 ,  H05K1/0298 ,  H05K1/185 ,  H05K1/188 ,  H05K3/22 ,  H05K3/4611 ,  H05K2201/0195 ,  H05K2201/0355 ,  H05K2201/09009 ,  H05K2201/10636 ,  H05K2203/11 ,  Y02P70/611

Abstract: A device embedded substrate includes an insulating layer including an insulating resin material, a device embedded in the insulating layer, a metal film coating at least one face of the device, and a roughened portion formed by roughening at least part of the surface of the metal film. Preferably, the device embedded substrate further includes: a conductive layer pattern-formed on a bottom face, the bottom face being one face of the insulating layer; and a bonding agent made of a material different from the insulating layer and joining the conductive layer (6) and a mounting face, the mounting face being one face of the device. The metal film is formed only on a face opposite to the mounting face, and the bonding agent has a thickness smaller than a thickness from the metal film to a top face, the top face being the other face of the insulating layer.

Abstract translation: 一种器件嵌入式衬底包括绝缘层，该绝缘层包括绝缘树脂材料，嵌入绝缘层中的器件，涂覆该器件的至少一个面的金属膜以及通过使金属的至少一部分表面粗糙化而形成的粗糙部分 电影。 优选地，装置嵌入式基板还包括：导电层图案形成在底面上，底面是绝缘层的一个面; 以及由与所述绝缘层不同的材料制成的接合剂，并且将所述导电层（6）和安装面接合，所述安装面是所述装置的一个面。 金属膜仅形成在与安装面相反的面上，粘合剂的厚度小于从金属膜到顶面的厚度，顶面是绝缘层的另一面。