Selectable fuse sets, and related methods, devices, and systems

    公开(公告)号:US11869620B2

    公开(公告)日:2024-01-09

    申请号:US17647508

    申请日:2022-01-10

    CPC classification number: G11C29/70 G11C11/4082

    Abstract: Memory devices are disclosed. A device may include a number of memory banks and a number of latch sets, wherein each latch set is associated with a memory bank. The device may also include a fuse array including a number of fuses. The device may further include circuitry configured to read data from a first set of fuses of the number of fuses and broadcast data from the first set of fuses to a first latch set of the number of latch sets. Further, in response to a repair result associated with the first set of fuses being a first state, the circuitry may be configured to read a second set of fuses and broadcast the second set of fuses to the first latch set. Methods of operating a memory device, microelectronic devices, semiconductor devices, and electronic systems are also disclosed.

    Memory devices with redundant memory cells for replacing defective memory cells, and related systems and methods

    公开(公告)号:US11114181B1

    公开(公告)日:2021-09-07

    申请号:US16983757

    申请日:2020-08-03

    Abstract: Memory devices are disclosed. A memory device may include a memory array including a number of memory cells partitioned into a number of memory segments. Each of the number of memory segments may include a redundant memory-cell group configurable to be accessed instead of a defective memory-cell group of the memory segment. The memory device may also include a set of latches configurable to indicate that a redundant memory-cell group of a memory segment of the number of memory segments is to be accessed instead of a defective memory-cell group of the memory segment. The set of latches may include segment latches configurable to indicate the memory segment or a status of the set of latches. The set of latches may also include address latches configurable to indicate the defective memory-cell group within the memory segment. Related systems and methods are also disclosed.

    Memory device with a row repair mechanism and methods for operating the same

    公开(公告)号:US11069426B1

    公开(公告)日:2021-07-20

    申请号:US16796511

    申请日:2020-02-20

    Abstract: Methods, apparatuses and systems related to managing access to a memory device are described. A memory device includes a plurality of banks that each include (1) a plurality of memory cells and (2) a plurality of redundant cells configured to replace one or more target memory cells in the plurality of memory cells. A set of shared fuses and latches may be used to store a row address for each repair that may be implemented in one of the plurality of banks. A shared match circuit coupled to the set of shared latches and the plurality of memory banks may be configured to at least partially implement a row repair for the row address for a bank associated with a commanded operation.

    APPARATUSES AND METHODS FOR DETERMINING WAFER DEFECTS

    公开(公告)号:US20210201460A1

    公开(公告)日:2021-07-01

    申请号:US16925243

    申请日:2020-07-09

    Abstract: An inspection system for determining wafer defects in semiconductor fabrication may include an image capturing device to capture a wafer image and a classification convolutional neural network (CNN) to determine a classification from a plurality of classes for the captured image. Each of the plurality of classes indicates a type of a defect in the wafer. The system may also include an encoder to encode to convert a training image into a feature vector; a cluster system to cluster the feature vector to generate soft labels for the training image; and a decoder to decode the feature vector into a re-generated image. The system may also include a classification system to determine a classification from the plurality of classes for the training image. The encoder and decoder may he formed from a CNN autoencoder. The classification CNN and the CNN autoencoder may each be a deep neural network.

    BLOCK STATUS PARITY DATA IN MEMORY

    公开(公告)号:US20250061058A1

    公开(公告)日:2025-02-20

    申请号:US18778600

    申请日:2024-07-19

    Abstract: Apparatuses, systems, and methods for block status parity data are described. An example method includes storing block status data associated with at least one block of a non-volatile memory that indicates a status of the at least one block of memory within a controller. The example method further comprises storing parity data that corresponds to the block status data. The example method further comprises prior to writing the block status data to the non-volatile memory, comparing the stored block status data to the parity data.

    BLOCK STATUS DATA RESET
    10.
    发明申请

    公开(公告)号:US20250061016A1

    公开(公告)日:2025-02-20

    申请号:US18784572

    申请日:2024-07-25

    Abstract: Apparatuses, systems, and methods for block status data reset are described. An example method includes sending a command, from a controller, to access at least one block of a first memory device. The example method further comprises receiving a failure message from the first memory device due to the at least one block being tagged as a bad block in block status data of the first memory device. The example method further comprises in response to receiving the failure message, resetting the block status data by reloading previously stored block status data from a second memory device.

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