公开(公告)号：US20100141909A1

公开(公告)日：2010-06-10

申请号：US12519077

申请日：2007-11-27

申请人： Arnoud Cornelis Wassink ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Theodorus Petrus Maria Cadee ,  Vladimir Mihailòvitch Krivtsun ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Paul Peter Anna Antonius Brom ,  Wouter Anthon Soer ,  Denis Alexandrovich Glushkov

发明人： Arnoud Cornelis Wassink ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Theodorus Petrus Maria Cadee ,  Vladimir Mihailòvitch Krivtsun ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Paul Peter Anna Antonius Brom ,  Wouter Anthon Soer ,  Denis Alexandrovich Glushkov

IPC分类号： G03B27/54 ,  G21K5/04

CPC分类号： G03F7/70933 ,  G03F7/70858 ,  G03F7/70883 ,  G03F7/70916 ,  G03F7/70925 ,  G03F7/70983 ,  H05G2/003 ,  H05G2/005

摘要： A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.

摘要翻译： 提供了一种用于产生限定光轴的辐射束的辐射系统。 辐射系统包括用于产生EUV辐射的等离子体产生的放电源。 放电源包括一对构造和布置成具有电压差的电极，以及用于在一对电极之间产生等离子体的系统，以便在电极之间的等离子体中提供放电。 辐射系统还包括用于从电极捕获碎屑的碎片捕获屏蔽。 碎片捕捉屏蔽被构造和布置成屏蔽电极与相对于光轴以预定球面角度提供的视线，并为视线中的电极之间的中心区域提供孔。

公开(公告)号：US07696493B2

公开(公告)日：2010-04-13

申请号：US11637937

申请日：2006-12-13

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Derk Jan Wilfred Klunder

IPC分类号： G03F7/20

CPC分类号： H05G2/003 ,  B82Y10/00 ,  G03F7/70033 ,  H05G2/005

摘要： The invention relates to a radiation system for generating electromagnetic radiation. The radiation system includes a pair of electrodes constructed and arranged to generate plasma of a first substance and a pinch in the plasma. The radiation system also includes a plasma recombination surface that is arranged proximate to the pinch, and is configured to neutralize a plurality of plasma particles.

摘要翻译： 本发明涉及一种用于产生电磁辐射的辐射系统。 辐射系统包括一对电极，其构造和布置成产生等离子体中的第一物质的等离子体和夹持物。 辐射系统还包括等离子体复合表面，该等离子体复合表面被布置成接近于夹紧，并且被配置为中和多个等离子体颗粒。

公开(公告)号：US20080142736A1

公开(公告)日：2008-06-19

申请号：US11637936

申请日：2006-12-13

申请人： Arnoud Cornelis Wassink ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Theodorus Petrus Maria Cadee ,  Vladimir Mihailovitch Krivtsun ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Paul Peter Anna Antonius Brom ,  Wouter Anthon Soer

发明人： Arnoud Cornelis Wassink ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Theodorus Petrus Maria Cadee ,  Vladimir Mihailovitch Krivtsun ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Paul Peter Anna Antonius Brom ,  Wouter Anthon Soer

IPC分类号： G21K5/00 ,  H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70858 ,  G03F7/70883 ,  G03F7/70916 ,  G03F7/70925 ,  G03F7/70983 ,  H05G2/003 ,  H05G2/005

摘要： A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.

摘要翻译： 提供了一种用于产生限定光轴的辐射束的辐射系统。 辐射系统包括用于产生EUV辐射的等离子体产生的放电源。 放电源包括一对构造和布置成具有电压差的电极，以及用于在一对电极之间产生等离子体的系统，以便在电极之间的等离子体中提供放电。 辐射系统还包括用于从电极捕获碎屑的碎片捕获屏蔽。 碎片捕捉屏蔽被构造和布置成屏蔽电极与相对于光轴以预定球面角度提供的视线，并为视线中的电极之间的中心区域提供孔。

公开(公告)号：US07696492B2

公开(公告)日：2010-04-13

申请号：US11637936

申请日：2006-12-13

申请人： Arnoud Cornelis Wassink ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Theodorus Petrus Maria Cadee ,  Vladimir Mihailovitch Krivtsun ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Paul Peter Anna Antonius Brom ,  Wouter Anthon Soer

发明人： Arnoud Cornelis Wassink ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Theodorus Petrus Maria Cadee ,  Vladimir Mihailovitch Krivtsun ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Paul Peter Anna Antonius Brom ,  Wouter Anthon Soer

IPC分类号： A61N5/00 ,  G21G5/00

CPC分类号： G03F7/70933 ,  G03F7/70858 ,  G03F7/70883 ,  G03F7/70916 ,  G03F7/70925 ,  G03F7/70983 ,  H05G2/003 ,  H05G2/005

摘要： A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.

摘要翻译： 提供了一种用于产生限定光轴的辐射束的辐射系统。 辐射系统包括用于产生EUV辐射的等离子体产生的放电源。 放电源包括一对构造和布置成具有电压差的电极，以及用于在一对电极之间产生等离子体的系统，以便在电极之间的等离子体中提供放电。 辐射系统还包括用于从电极捕获碎屑的碎片捕获屏蔽。 碎片捕捉屏蔽被构造和布置成屏蔽电极与相对于光轴以预定球面角度提供的视线，并为视线中的电极之间的中心区域提供孔。

公开(公告)号：US20080142741A1

公开(公告)日：2008-06-19

申请号：US11637937

申请日：2006-12-13

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Konstantin Nikolaevitch Koshelev ,  Derk Jan Wilfred Klunder

IPC分类号： G21K5/00 ,  H05G2/00

CPC分类号： H05G2/003 ,  B82Y10/00 ,  G03F7/70033 ,  H05G2/005

摘要： The invention relates to a radiation system for generating electromagnetic radiation. The radiation system includes a pair of electrodes constructed and arranged to generate plasma of a first substance and a pinch in the plasma. The radiation system also includes a plasma recombination surface that is arranged proximate to the pinch, and is configured to neutralize a plurality of plasma particles.

摘要翻译： 本发明涉及一种用于产生电磁辐射的辐射系统。 辐射系统包括一对电极，其构造和布置成产生等离子体中的第一物质的等离子体和夹持物。 辐射系统还包括等离子体复合表面，该等离子体复合表面被布置成接近于夹紧，并且被配置为中和多个等离子体颗粒。

公开(公告)号：US07504643B2

公开(公告)日：2009-03-17

申请号：US11444535

申请日：2006-06-01

申请人： Johannes Maria Freriks ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Johannes Maria Freriks ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G03F7/20 ,  G21G5/00 ,  A61N5/00 ,  C23F1/00 ,  C25F1/00 ,  H05H1/00 ,  H05H1/24

CPC分类号： B82Y10/00 ,  G03F7/70166 ,  G03F7/70925

摘要： A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical containing gas to at least part of the module and a pump configured to pump gas through the module such that a flow speed of the hydrogen radical containing gas provided through at least part of the module is at least 1 m/s. The cleaning arrangement may also include a gas shutter configured to modulate a flow of the hydrogen radical containing gas to at least part of the module, a buffer volume of at least 1 m3 in communication with the module, and a pump configured to provide a gas pressure in the buffer volume between 0.001 mbar (0.1 Pa) and 1 mbar (100 Pa). The cleaning arrangement may further include a gas return system.

摘要翻译： 用于光刻设备模块的清洁装置可以设置在收集器中。 清洁装置包括被配置为向至少部分模块提供含氢自由基气体的氢根源，以及构造成将气体泵送通过模块的泵，使得通过至少部分的至少一部分提供含氢自由基气体的流速 该模块至少为1米/秒。 清洁装置还可以包括配置成将含氢自由基气体的流动调制到模块的至少一部分的气闸，与模块连通的至少1m 3的缓冲体积以及配置成提供气体的泵 缓冲体积在0.001毫巴（0.1帕）至1毫巴（100帕）之间的压力。 清洁装置还可以包括气体返回系统。

公开(公告)号：US20090072168A1

公开(公告)日：2009-03-19

申请号：US12289884

申请日：2008-11-06

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch IVANOV ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch IVANOV ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G01J3/10

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以配置在设备内的特定位置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US20070145297A1

公开(公告)日：2007-06-28

申请号：US11444535

申请日：2006-06-01

申请人： Johannes Maria Freriks ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Johannes Maria Freriks ,  Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： G03F7/20

CPC分类号： B82Y10/00 ,  G03F7/70166 ,  G03F7/70925

摘要： A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical containing gas to at least part of the module and a pump configured to pump gas through the module such that a flow speed of the hydrogen radical containing gas provided through at least part of the module is at least 1 m/s. The cleaning arrangement may also include a gas shutter configured to modulate a flow of the hydrogen radical containing gas to at least part of the module, a buffer volume of at least 1 m3 in communication with the module, and a pump configured to provide a gas pressure in the buffer volume between 0.001 mbar (0.1 Pa) and 1 mbar (100 Pa). The cleaning arrangement may further include a gas return system.

摘要翻译： 用于光刻设备模块的清洁装置可以设置在收集器中。 清洁装置包括被配置为向至少部分模块提供含氢自由基气体的氢根源，以及构造成将气体泵送通过模块的泵，使得通过至少部分的至少一部分提供含氢自由基气体的流速 该模块至少为1米/秒。 清洁装置还可以包括配置成将含氢自由基气体的流动调制到模块的至少一部分的气闸，与模块连通的至少1m 3的缓冲体积， 以及配置成在0.001mbar（0.1Pa）和1mbar（100Pa）之间的缓冲体积中提供气体压力的泵。 清洁装置还可以包括气体返回系统。

公开(公告)号：US07812330B2

公开(公告)日：2010-10-12

申请号：US12289884

申请日：2008-11-06

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以配置在设备内的特定位置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。

公开(公告)号：US07462850B2

公开(公告)日：2008-12-09

申请号：US11296702

申请日：2005-12-08

申请人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

发明人： Vadim Yevgenyevich Banine ,  Vladimir Vitalevitch Ivanov ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Derk Jan Wilfred Klunder ,  Maarten Marinus Johannes Wilhelmus Van Herpen

IPC分类号： H05G2/00

CPC分类号： G03F7/70933 ,  G03F7/70925

摘要： A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

摘要翻译： 清洁装置被配置为清洁EUV光刻设备的EUV光学元件。 部分自由基压力范围在0.1-10Pa之间。清洁装置可以被配置在光刻设备的清洁茧内用于离线清洁。 它也可以在设备内的特定位置进行配置，以便在生产过程中清洁附近的光学元件。 在0.1-10Pa的压力范围内，原子氢进入光学器件的渗透率很高，而分子氢和氢消耗的复合受到限制。