摘要:
A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.
摘要:
A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.
摘要:
A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.
摘要:
A lithographic apparatus is disclosed. The apparatus includes a source for supplying hydrogen radicals, a guide for use in conjunction with the source, for directing hydrogen radicals to an application surface to be targeted by the hydrogen radicals. The guide is provided with a coating having a hydrogen radical recombination constant of less than 0.2. In this way, the radicals can be transported with reduced losses and are able to better interact with remaining contaminants on application surfaces, such as mirror surfaces.
摘要:
A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.
摘要:
A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.
摘要:
A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.
摘要:
A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.
摘要:
A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.
摘要:
A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical containing gas to at least part of the module and a pump configured to pump gas through the module such that a flow speed of the hydrogen radical containing gas provided through at least part of the module is at least 1 m/s. The cleaning arrangement may also include a gas shutter configured to modulate a flow of the hydrogen radical containing gas to at least part of the module, a buffer volume of at least 1 m3 in communication with the module, and a pump configured to provide a gas pressure in the buffer volume between 0.001 mbar (0.1 Pa) and 1 mbar (100 Pa). The cleaning arrangement may further include a gas return system.