公开(公告)号：US07100266B2

公开(公告)日：2006-09-05

申请号：US10039201

申请日：2002-01-04

申请人： Martin L. Plumer ,  Nurul Amin ,  Vee S. Kong ,  Richard P. Michel ,  Johannes van Ek

发明人： Martin L. Plumer ,  Nurul Amin ,  Vee S. Kong ,  Richard P. Michel ,  Johannes van Ek

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/1871 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/3116 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A beveled writing pole includes a top portion, a beveled portion, and a throat portion. The top portion has an end that defines a writing pole tip. The beveled portion adjoins the top portion and has a bevel that extends from the writing pole tip and increases a thickness of the writing pole proximate the pole tip. The throat portion is formed of the top and beveled portions and has tapered sides that extend from the writing pole tip and increase a width of the writing pole proximate the writing pole tip. A method of forming the beveled writing pole is also presented.

摘要翻译： 斜面书写柱包括顶部，斜面部分和喉部。 顶部具有限定书写杆尖端的端部。 斜面部分与顶部相邻并且具有从书杆极端部延伸的斜面，并增加靠近极尖的书写杆的厚度。 喉部由顶部和斜面部分形成，并且具有从书写极端部延伸的锥形侧面，并增加书杆极靠近书杆极尖的宽度。 还提出了形成斜面书写柱的方法。

公开(公告)号：US06385016B1

公开(公告)日：2002-05-07

申请号：US09660087

申请日：2000-09-12

申请人： Johannes van Ek ,  Martin L. Plumer ,  Richard P. Michel ,  Michael C. Kautzky ,  Dimitar V. Dimitrov

发明人： Johannes van Ek ,  Martin L. Plumer ,  Richard P. Michel ,  Michael C. Kautzky ,  Dimitar V. Dimitrov

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/40 ,  G11B2005/3996

摘要： A magnetic read head having an air bearing surface, a magnetoresistive sensor, an insulator layer, and first and second current contacts. The magnetoresistive sensor has a first portion adjacent to the air bearing surface and a second portion distal from the air bearing surface. The first and second current contacts are positioned in electrical contact with opposite edges of the first portion of the magnetoresistive sensor, and the insulator layer is positioned between the second portion of the magnetoresistive sensor and each of the first and second current contacts.

摘要翻译： 具有空气轴承表面的磁读头，磁阻传感器，绝缘体层以及第一和第二电流触点。 磁阻传感器具有与空气支承表面相邻的第一部分和远离空气支承表面的第二部分。 第一和第二电流触点定位成与磁阻传感器的第一部分的相对边缘电接触，并且绝缘体层位于磁阻传感器的第二部分和第一和第二电流触点中的每一个之间。

公开(公告)号：US06801409B2

公开(公告)日：2004-10-05

申请号：US09952725

申请日：2001-09-14

申请人： Richard P. Michel ,  Mark T. Kief ,  Dehua Han ,  Venkateswara R. Inturi ,  Vladyslav A. Vas'ko

发明人： Richard P. Michel ,  Mark T. Kief ,  Dehua Han ,  Venkateswara R. Inturi ,  Vladyslav A. Vas'ko

IPC分类号： G11B539

CPC分类号： G11B5/3903 ,  G11B5/11 ,  G11B5/115 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/313 ,  Y10T29/49046

摘要： A read head shield having improved stability includes a ferromagnetic (FM) layer and an anti-ferromagnetic (AFM) layer adjacent the FM layer. The FM layer has a patterned shape and a domain configuration that is defined by a plurality of local magnetic domains that are stabilized in accordance with the patterned shape. The AFM layer is annealed to imprint thereon the stabilized local magnetic domains of the FM layer. The AFM layer operates to increase the stability of the domain configuration of the FM layer thereby providing improved resistance to domain configuration shift caused by the application of a strong magnetic field.

摘要翻译： 具有改进的稳定性的读头屏蔽包括邻近FM层的铁磁（FM）层和反铁磁（AFM）层。 FM层具有由根据图案形状稳定的多个局部磁畴限定的图案形状和畴结构。 对AFM层进行退火以在其上压印FM层的稳定的局部磁畴。 AFM层操作以增加FM层的畴结构的稳定性，从而提供由施加强磁场引起的对域配置位移的改进的阻力。

公开(公告)号：US5783262A

公开(公告)日：1998-07-21

申请号：US762087

申请日：1996-12-09

申请人： Alison Chaiken ,  Richard P. Michel

发明人： Alison Chaiken ,  Richard P. Michel

IPC分类号： C23C14/08 ,  C23C14/46 ,  G11B5/39 ,  H01F41/18 ,  H01F41/30

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/085 ,  C23C14/46 ,  H01F10/002 ,  H01F41/18 ,  H01F41/302 ,  G11B2005/3996 ,  G11B5/399

摘要： An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

摘要翻译： 通过在纯氩（Ar）溅射气体中的氧化物靶的离子束溅射产生的氧化物（NiO，CoO，NiCoO）反铁磁性交换偏压层，没有氧气引入到系统中。 反铁磁性氧化物层用于例如磁阻回读头以使铁磁膜的磁滞回线偏离零场轴。 例如，使用Ar离子的NiO靶的离子束溅射制造NiO交换层，衬底温度在200℃，离子束电压为1000V，束电流为20mA，沉积速率 约0.2安培/秒。 所得NiO膜是无定形的。