公开(公告)号：US20070056930A1

公开(公告)日：2007-03-15

申请号：US11162550

申请日：2005-09-14

申请人： Seiji Iseda ,  Siddhartha Panda ,  Michael Sievers ,  Richard Wise

发明人： Seiji Iseda ,  Siddhartha Panda ,  Michael Sievers ,  Richard Wise

IPC分类号： C03C25/68 ,  B44C1/22 ,  H01L21/461 ,  C23F1/00

CPC分类号： H01L21/32137

摘要： Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C5F8) and nitrogen trifluoride (NF3). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.

摘要翻译： 公开了采用包括全氟环戊烯（C 5 H 5 F 8 N）和三氟化氮（NF 3 3））的气流的多晶硅蚀刻方法。 蚀刻方法实现了基本垂直的轮廓和更平滑的表面，并且可以实现低至3.0nm的3σ变化。

公开(公告)号：US07754615B2

公开(公告)日：2010-07-13

申请号：US11495725

申请日：2006-07-31

申请人： Siddhartha Panda ,  Richard Wise ,  Lee Chen ,  Michael Sievers

发明人： Siddhartha Panda ,  Richard Wise ,  Lee Chen ,  Michael Sievers

IPC分类号： H01L21/302

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01L22/26

摘要： A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.

摘要翻译： 描述了一种用于检测干等离子体蚀刻系统中的端点的方法和装置，其包括第一电极（例如，上电极）和第二电极（例如下电极），基板搁置在该第二电极上。 在第一电极和围绕第二电极的环形电极之间施加直流（DC）电压，并且监视直流电流以确定蚀刻工艺的终点。 直流电流受等离子体的阻抗影响，因此响应于许多变化，包括例如等离子体密度，暴露表面的电子/离子通量，电子温度等。

公开(公告)号：US20060227321A1

公开(公告)日：2006-10-12

申请号：US10907591

申请日：2005-04-07

申请人： Siddhartha Panda ,  Michael Sievers ,  Richard Wise

发明人： Siddhartha Panda ,  Michael Sievers ,  Richard Wise

IPC分类号： G01J3/40

CPC分类号： G01N23/2273

摘要： A non-destructive in-situ elemental profiling of a layer in a set of layers method and system are disclosed. In one embodiment, a first emission of a plurality of photoelectrons is caused from the layer to be elementally profiled. An elemental profile of the layer is determined based on the emission. In another embodiment, a second emission of a plurality of photoelectrons is also received from the layer, and an elemental profile is determined by comparison of the resulting signals. A process that is altering the layer can then be controlled “on-the-fly” to obtain a desired material composition. Since the method can be employed in-situ and is non-destructive, it reduces turn around time and lowers wafer consumption. The invention also records the composition of all processed wafers, hence, removing the conventional statistical sampling problem.

摘要翻译： 公开了一组层中的层的非破坏性原位元素分析方法和系统。 在一个实施例中，多个光电子的第一次发射是从该层进行元素分析。 基于发射确定层的元素分布。 在另一个实施例中，也从该层接收多个光电子的第二次发射，并且通过比较所得到的信号来确定元素分布。 然后可以“即时”控制改变层的方法以获得所需的材料组成。 由于该方法可以原位使用并且是非破坏性的，所以可以减少周转时间并降低晶片消耗。 本发明还记录了所有加工晶片的组成，因此，去除了常规统计抽样问题。

公开(公告)号：US20080026488A1

公开(公告)日：2008-01-31

申请号：US11495725

申请日：2006-07-31

申请人： Siddhartha Panda ,  Richard Wise ,  Lee Chen ,  Michael Sievers

发明人： Siddhartha Panda ,  Richard Wise ,  Lee Chen ,  Michael Sievers

IPC分类号： H01L21/66 ,  C23F1/00

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01L22/26

摘要： A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.

摘要翻译： 描述了一种用于检测干等离子体蚀刻系统中的端点的方法和装置，其包括第一电极（例如，上电极）和第二电极（例如下电极），基板搁置在该第二电极上。 在第一电极和围绕第二电极的环形电极之间施加直流（DC）电压，并且监视直流电流以确定蚀刻工艺的终点。 直流电流受等离子体的阻抗影响，因此响应于许多变化，包括例如等离子体密度，暴露表面的电子/离子通量，电子温度等。

公开(公告)号：US20070068234A1

公开(公告)日：2007-03-29

申请号：US11162958

申请日：2005-09-29

申请人： Michael Sievers ,  Siddhartha Panda ,  Richard Wise

发明人： Michael Sievers ,  Siddhartha Panda ,  Richard Wise

IPC分类号： G01B5/28

CPC分类号： G01Q60/38

摘要： An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results. Moreover, there is a much lower propensity for the tip to damage the sample or to be damaged from inadvertent contact with the surface of the sample.

摘要翻译： 描述了一种具有终止在中空尖端中的中空悬臂的原子力显微镜（AFM），其中尖端的端部浸入液体中。 AFM包括提供和控制气体进入中空尖端的气体源。 调节气体的流速以在中空末端的端部形成并维持静止气泡。 静态气泡的形成被光学验证。 气体控制歧管允许容易地切换进入探针尖端的气体。 被引入的气体类似于化学改性的尖端，并且被选择以增加感兴趣的材料的偏转信号。 本发明的尖端是一种高度通用性的AFM工具，其易于调节以为各种材料提供优化的成像，与需要大量化学修饰的尖端以获得等效结果的标准AFM相反。 此外，尖端损坏样品或由于与样品表面无意接触而损坏的倾向低得多。

公开(公告)号：US20060118718A1

公开(公告)日：2006-06-08

申请号：US10904883

申请日：2004-12-02

申请人： Michael Sievers ,  Siddhartha Panda ,  Richard Wise

发明人： Michael Sievers ,  Siddhartha Panda ,  Richard Wise

IPC分类号： G01N23/227

CPC分类号： G01N23/227 ,  H01L22/26

摘要： Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.

摘要翻译： 光电子发射用于检测经历图案化的一组层中最上层的厚度变化的端点。 该层被照射，这导致光电子的发射。 在接收到或不存在光电子发射时，检测到图案化端点。

公开(公告)号：US20080093629A1

公开(公告)日：2008-04-24

申请号：US11955591

申请日：2007-12-13

申请人： Huajie Chen ,  Judson Holt ,  Rangarajan Jagannathan ,  Wesley Natzle ,  Michael Sievers ,  Richard Wise

发明人： Huajie Chen ,  Judson Holt ,  Rangarajan Jagannathan ,  Wesley Natzle ,  Michael Sievers ,  Richard Wise

IPC分类号： H01L29/778

CPC分类号： H01L29/66636 ,  H01L29/6659 ,  H01L29/7833

摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

摘要翻译： 公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。 蚀刻半导体层以形成切割栅极介电层的凹部。 低能量植入物形成晕轮。 然后，执行COR预清洁，并且通过外延沉积填充凹部。 外延可以被原位掺杂或随后植入以形成源/漏扩展。 或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。 在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。 或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

公开(公告)号：US06444124B1

公开(公告)日：2002-09-03

申请号：US09648047

申请日：2000-08-25

申请人： Theodore Onyeche ,  Michael Sievers

发明人： Theodore Onyeche ,  Michael Sievers

IPC分类号： C02F328

CPC分类号： C02F11/00 ,  C02F11/04 ,  Y02E50/343

摘要： A method and system for treating sludge in a wastewater facility involving a novel concentration step optimises the energy balance and sludge solids mass reduction incurred from concentration and low pressure homogenization of the sludge.

摘要翻译： 一种污水处理设备的污泥处理方法和系统，涉及新的浓缩步骤，优化了污泥浓缩和低压均质化所产生的能量平衡和污泥固体质量的降低。

公开(公告)号：US08641902B2

公开(公告)日：2014-02-04

申请号：US12921876

申请日：2009-03-06

申请人： Wolfgang Ewert ,  Michael Sievers ,  Hinnerk Bormann

发明人： Wolfgang Ewert ,  Michael Sievers ,  Hinnerk Bormann

IPC分类号： C02F3/00 ,  C02F1/00 ,  C02F9/00 ,  C02F3/12

CPC分类号： C02F11/04 ,  C02F3/12 ,  C02F3/1221 ,  C12M21/04 ,  C12M25/18 ,  C12M25/20 ,  C12M45/20 ,  Y02E50/343 ,  Y02W10/15

摘要： The invention relates to a method for wastewater treatment utilizing an anaerobic treatment of primary sludge (PS) in a septic tank (5), and a separate treatment of excess sludge (ÜS). The excess sludge (ÜS) is separated from the primary sludge (PS) before the anaerobic treatment, solubilized in a hydrolysis treatment and liquefied, and subjected to a separate anaerobic treatment independently of the primary sludge (PS).

摘要翻译： 本发明涉及利用污泥池（5）中初级污泥（PS）的厌氧处理和多余污泥（ÜS）的单独处理的废水处理方法。 在厌氧处理之前，将多余的污泥（ÜS）与初级污泥（PS）分离，溶解在水解处理中并液化，独立于初级污泥（PS）进行单独的厌氧处理。

公开(公告)号：US20060097159A1

公开(公告)日：2006-05-11

申请号：US10904438

申请日：2004-11-10

申请人： Steven Herschbein ,  Narender Rana ,  Chad Rue ,  Michael Sievers

发明人： Steven Herschbein ,  Narender Rana ,  Chad Rue ,  Michael Sievers

IPC分类号： H01J37/28 ,  H01J37/244

CPC分类号： H01J37/244 ,  H01J2237/2448 ,  H01J2237/3174

摘要： Detection of weak ion currents scattered from a sample by an ion beam is improved by the use of a multiplier system in which a conversion electrode converts incident ions to a number of secondary electrons multiplied by a multiplication factor, the secondary electrons being attracted to an electron detector by an appropriate bias. In one version, the detector is a two stage system, in which the secondary electrons strike a scintillator that emits photons that are detected in a photon detector such as a photomultiplier or a CCD.

摘要翻译： 通过使用其中转换电极将入射离子转换成多个次级电子乘以乘法因子的乘法系统来提高通过离子束从样品散射的弱离子电流的检测，二次电子被吸引到电子 检测器通过适当的偏差。 在一个版本中，检测器是两级系统，其中二次电子撞击发射在诸如光电倍增管或CCD的光子检测器中检测到的光子的闪烁体。