摘要:
Provided are a photomask, including: a substrate; an opaque pattern formed on the substrate and made of a material which does not penetrate light; a first dielectric layer formed on the substrate and the opaque pattern; and a negative refractive-index meta material layer formed on the first dielectric layer, in which a dispersion mode used in the photomask uses a Quasi bound mode, a manufacturing method of the photomask, and a manufacturing method of a substrate using the photomask.
摘要:
Provided is a photolithography mask capable of forming fine patterns beyond a critical resolution of an exposer without replacing or changing the exposer. The mask includes an at least partially light absorbing phase shift layer and uses a complex wavelength light source.
摘要:
A method for forming a fine exposure pattern where a width and an interval of the pattern are each 1CD, by first exposing a photoresist by using an exposure mask where an interval ratio of a light shielding part and a light transmission part is 2CD:1CD to 4CD:1CD, and then second exposing the photoresist after the exposure mask is shifted at a predetermined interval, or second exposing the photoresist by using an exposure mask formed at a position where a light transmission part is shifted at a predetermined interval, and developing the photoresist, such that it is possible to form a display device having a pixel electrode including a plurality of fine branch electrodes having a smaller width and interval than a resolution of an exposure apparatus.
摘要:
Provided is a photolithography mask capable of forming fine patterns beyond a critical resolution of an exposer without replacing or changing the exposer. The mask includes an at least partially light absorbing phase shift layer and uses a complex wavelength light source.
摘要:
A photoresist composition includes from about 20% to about 50% by weight of a polymer, from about 0.5% to about 1.5% by weight of a photo-acid generator, from about 0.01% to about 0.5% by weight of a photo absorber and the remainder includes an organic solvent. Also provided is a method of forming a fine pattern including forming a thin film on a substrate; forming a photoresist pattern by using a photoresist composition that includes from about 20% to about 50% by weight of a polymer, from about 0.5% to about 1.5% by weight of a photo-acid generator, from about 0.01% to about 0.5% by weight of a photo absorber and a remainder comprising an organic solvent; and patterning the thin film by using the photoresist pattern as an etch-stop layer to form a fine pattern.
摘要:
A swivel-type mobile terminal includes a terminal body having a microphone, a display unit which is rotatably and swingably connected to the terminal body and mounted with a display window, a first receiver in the display unit for outputting audio signals when the display unit is rotated to be an open position, and a second receiver in the display unit for outputting audio signal when the display unit is folded in a position which allows the display window to be viewable by a user. In this folded position, the terminal can support phone calls while adjusting the gain of the microphone. The display is also viewable by a user while in this position.
摘要:
A swivel-type mobile terminal includes a terminal body having a microphone, a display unit which is rotatably and swingably connected to the terminal body and mounted with a display window, a first receiver in the display unit for outputting audio signals when the display unit is rotated to be an open position, and a second receiver in the display unit for outputting audio signal when the display unit is folded in a position which allows the display window to be viewable by a user. In this folded position, the terminal can support phone calls while adjusting the gain of the microphone. The display is also viewable by a user while in this position.