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公开(公告)号：US20100031403A1
公开(公告)日：2010-02-04
申请号：US12376160
申请日：2006-08-11
IPC分类号： G01Q60/24
CPC分类号： G01Q30/10 , F28D15/0275 , F28F13/00 , F28F2013/008
摘要： The invention concerns a heat coupling device for scanning force or atomic force microscopy, comprising a first heat conducting device (27), a second heat conducting device (28) and a coupling device (36, 38, 39, 40, 41), in which the first heat conducting device (27) is movable relative to the second heat conducting device (28) and the coupling device (36, 38, 39, 40, 41) is arranged between the first and second heat conducting device (27, 28) and designed so that it is at least partially deformable fluid-like and/or flexible and the heat can be transferred between the first and second heat conducting device (28).
摘要翻译： 本发明涉及一种用于扫描力或原子力显微镜的热耦合装置，包括第一导热装置（27），第二导热装置（28）和联接装置（36,38,39,40,41），其中 所述第一导热装置（27）相对于所述第二导热装置（28）可移动，并且所述联接装置（36,38,39,40,41）布置在所述第一和第二导热装置（27,28）之间 ），并且被设计成使得其至少部分可变形地流体状和/或柔性，并且热量可以在第一和第二导热装置（28）之间传递。
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公开(公告)号：US4028563A
公开(公告)日：1977-06-07
申请号：US699751
申请日：1976-06-25
申请人： Ulrich Geisler
发明人： Ulrich Geisler
IPC分类号： G05F3/22 , H01L27/07 , H01L27/08 , H01L29/08 , H01L29/866 , H03K3/26 , H01L27/02 , H01L29/72
CPC分类号： G05F3/22 , H01L27/0772 , H01L27/0814 , H01L29/0804 , H01L29/866
摘要： This invention relates to an integrated zener diode having a breakdown voltage of less than about 5 volts. In order to achieve predetermined breakdown voltages within a small gap in the mass production independent of the bulk resistivity fluctuations, the zener diode of the invention comprises a forward-biased control transistor, the base zone of which is fed via a resistor zone to the emitter of said transistor as well as via the collector-emitter-line of a further multi-emitter transistor structure to the collector of said control transistor.
摘要翻译： 本发明涉及具有小于约5伏的击穿电压的集成齐纳二极管。 为了在质量产生的小间隙内实现预定的击穿电压，独立于体电阻率波动，本发明的齐纳二极管包括正向偏置的控制晶体管，其基极区经由电阻器区域馈送到发射极 的所述晶体管，以及经由另一多发射极晶体管结构的集电极 - 发射极线到所述控制晶体管的集电极。
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