公开(公告)号：US20090124077A1

公开(公告)日：2009-05-14

申请号：US12285574

申请日：2008-10-08

申请人： Mitsuhiro Okada ,  Takahiro Miyahara ,  Toshiharu Nishimura

发明人： Mitsuhiro Okada ,  Takahiro Miyahara ,  Toshiharu Nishimura

IPC分类号： H01L21/443

CPC分类号： H01L21/28035 ,  C23C16/24 ,  C23C16/56 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02667

摘要： A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.

摘要翻译： 用于形成掺杂有磷或硼的多晶硅膜的多晶硅膜形成方法包括加热放置在反应容器内部的真空气氛中的目标衬底，并将反应容器中的硅膜形成气体，用于 用磷或硼掺杂膜，以及含有成分以阻止多晶硅晶体形成柱状晶体的颗粒尺寸调节气体，并促进多晶硅晶体的小型化，从而将掺杂有磷或硼的硅膜沉积在 目标基板。

公开(公告)号：US07923357B2

公开(公告)日：2011-04-12

申请号：US12285574

申请日：2008-10-08

申请人： Mitsuhiro Okada ,  Takahiro Miyahara ,  Toshiharu Nishimura

发明人： Mitsuhiro Okada ,  Takahiro Miyahara ,  Toshiharu Nishimura

IPC分类号： H01L21/20 ,  H01L21/04

CPC分类号： H01L21/28035 ,  C23C16/24 ,  C23C16/56 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02667

摘要： A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.

摘要翻译： 用于形成掺杂有磷或硼的多晶硅膜的多晶硅膜形成方法包括加热放置在反应容器内部的真空气氛中的目标衬底，并将反应容器中的硅膜形成气体，用于 用磷或硼掺杂膜，以及含有成分以阻止多晶硅晶体形成柱状晶体的颗粒尺寸调节气体，并促进多晶硅晶体的小型化，从而将掺杂有磷或硼的硅膜沉积在 目标基板。

公开(公告)号：US08080109B2

公开(公告)日：2011-12-20

申请号：US12149537

申请日：2008-05-02

申请人： Mitsuhiro Okada ,  Satoshi Takagi ,  Ryou Son ,  Masahiko Tomita ,  Yamato Tonegawa ,  Toshiharu Nishimura

发明人： Mitsuhiro Okada ,  Satoshi Takagi ,  Ryou Son ,  Masahiko Tomita ,  Yamato Tonegawa ,  Toshiharu Nishimura

IPC分类号： B08B9/08

CPC分类号： B08B5/00 ,  C23C16/345 ,  C23C16/4405 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3185 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905

摘要： A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

摘要翻译： 使用半导体工艺的成膜装置的方法包括设定成膜装置的反应室不含有产品目标基板的空转状态，然后进行除去存在于内部表面的污染物的清洗处理 反应室通过使自由基作用在反应室的内表面上。 通过激活含有氧和氢作为元素的吹扫工艺气体来产生自由基。

公开(公告)号：US20080282976A1

公开(公告)日：2008-11-20

申请号：US12149537

申请日：2008-05-02

申请人： Mitsuhiro Okada ,  Satoshi Takagi ,  Ryou Son ,  Masahiko Tomita ,  Yamato Tonegawa ,  Toshiharu Nishimura

发明人： Mitsuhiro Okada ,  Satoshi Takagi ,  Ryou Son ,  Masahiko Tomita ,  Yamato Tonegawa ,  Toshiharu Nishimura

IPC分类号： C23C16/56 ,  B08B5/00 ,  H01L21/469 ,  B08B9/00

CPC分类号： B08B5/00 ,  C23C16/345 ,  C23C16/4405 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3185 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905

摘要： A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

摘要翻译： 使用半导体工艺的成膜装置的方法包括设定成膜装置的反应室不含有产品目标基板的空转状态，然后进行除去存在于内部表面的污染物的清洗处理 反应室通过使自由基作用在反应室的内表面上。 通过激活含有氧和氢作为元素的吹扫工艺气体来产生自由基。

公开(公告)号：US20080132079A1

公开(公告)日：2008-06-05

申请号：US11905628

申请日：2007-10-02

申请人： Mitsuhiro Okada ,  Satoshi Mizunaga ,  Yamato Tonegawa ,  Toshiharu Nishimura

发明人： Mitsuhiro Okada ,  Satoshi Mizunaga ,  Yamato Tonegawa ,  Toshiharu Nishimura

IPC分类号： H01L21/302

CPC分类号： C23C16/4405 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S134/902

摘要： A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.

摘要翻译： 使用半导体工艺的成膜装置的方法包括：第一清洗处理，其将第一清洗气体从成膜装置的反应室的内表面除去副产物膜，同时将第一清洗气体供给到 反应室，并将反应室的内部设置在第一温度和第一压力下以启动第一清洁气体。 该方法还包括第二清洁过程，然后在将第二清洁气体供应到反应室中时，由第二清洁气体从反应室的内表面除去污染物，并将反应室的内部设定在第二温度 以及第二压力来启动第二清洁气体。 第二清洗气体包括含氯气体。

公开(公告)号：US07691445B2

公开(公告)日：2010-04-06

申请号：US11562198

申请日：2006-11-21

申请人： Mitsuhiro Okada ,  Toshiharu Nishimura

发明人： Mitsuhiro Okada ,  Toshiharu Nishimura

IPC分类号： B05D3/04

CPC分类号： H01L21/0217 ,  C23C16/4405 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/3145 ,  H01L21/3185

摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine gas and hydrogen gas.

摘要翻译： 使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面 平坦化气体。 内表面包含石英或碳化硅的主要成分。 在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。 在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。 平坦化气体含有氟气和氢气。

公开(公告)号：US07959737B2

公开(公告)日：2011-06-14

申请号：US11905628

申请日：2007-10-02

申请人： Mitsuhiro Okada ,  Satoshi Mizunaga ,  Yamato Tonegawa ,  Toshiharu Nishimura

发明人： Mitsuhiro Okada ,  Satoshi Mizunaga ,  Yamato Tonegawa ,  Toshiharu Nishimura

IPC分类号： C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC分类号： C23C16/4405 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S134/902

摘要： A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.

摘要翻译： 使用半导体工艺的成膜装置的方法包括：第一清洗处理，其将第一清洗气体从成膜装置的反应室的内表面除去副产物膜，同时将第一清洗气体供给到 反应室，并将反应室的内部设置在第一温度和第一压力下以启动第一清洁气体。 该方法还包括第二清洁过程，然后在将第二清洁气体供应到反应室中时，由第二清洁气体从反应室的内表面除去污染物，并将反应室的内部设定在第二温度 以及第二压力来启动第二清洁气体。 第二清洗气体包括含氯气体。

公开(公告)号：US20060081182A1

公开(公告)日：2006-04-20

申请号：US11246290

申请日：2005-10-11

申请人： Mitsuhiro Okada ,  Atsushi Endo ,  Toshiharu Nishimura ,  Kazuhide Hasebe

发明人： Mitsuhiro Okada ,  Atsushi Endo ,  Toshiharu Nishimura ,  Kazuhide Hasebe

IPC分类号： C23C16/00 ,  B08B3/12 ,  B44C1/22 ,  B05C11/00

CPC分类号： C23C16/4405

摘要： A thin film deposition system cleaning method is capable of efficiently removing reaction products deposited on surfaces of component members of a thin film deposition system. A thermal processing system 1 capable of carrying out the thin film deposition system cleaning method includes a controller 100. The controller 100 controls a heating means so as to heat the interior of a reaction tube 2 at a temperature in the range of 400° C. to 700° C. The controller 100 controls a cleaning gas supply means for supplying a cleaning gas containing fluorine and hydrogen fluoride through a process gas supply pipe 17 into the reaction tube 2 to remove deposits deposited on surfaces exposed to an atmosphere in the reaction tube 2.

摘要翻译： 薄膜沉积系统清洁方法能够有效地去除沉积在薄膜沉积系统的部件的表面上的反应产物。 能够进行薄膜沉积系统清洗方法的热处理系统1包括控制器100。 控制器100控制加热装置，以便在400℃至700℃范围内的温度下加热反应管2的内部。控制器100控制用于供应含有氟的清洁气体的清洁气体供应装置 和氟化氢通过工艺气体供给管17进入反应管2，以去除沉积在暴露于反应管2中的气氛的表面上的沉积物。

公开(公告)号：US07470637B2

公开(公告)日：2008-12-30

申请号：US11090082

申请日：2005-03-28

申请人： Mitsuhiro Okada ,  Toshiharu Nishimura ,  Atsushi Endo

发明人： Mitsuhiro Okada ,  Toshiharu Nishimura ,  Atsushi Endo

IPC分类号： H01L21/31

CPC分类号： C23C16/4405 ,  C23C16/4404 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3185

摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.

摘要翻译： 使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面 平坦化气体。 内表面包含石英或碳化硅的主要成分。 在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。 在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。 平坦化气体含氟和氟化氢。 第二温度在300至800℃的范围内。

公开(公告)号：US20060068598A1

公开(公告)日：2006-03-30

申请号：US11090082

申请日：2005-03-28

申请人： Mitsuhiro Okada ,  Toshiharu Nishimura ,  Atsushi Endo

发明人： Mitsuhiro Okada ,  Toshiharu Nishimura ,  Atsushi Endo

IPC分类号： H01L21/31

CPC分类号： C23C16/4405 ,  C23C16/4404 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3185

摘要： A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine and hydrogen fluoride. The second temperature is within a range of from 300 to 800° C.

摘要翻译： 使用半导体工艺的成膜装置的方法包括：通过清洗气体除去沉积在成膜装置的反应室的内表面上的副产物膜，然后用反应室的内表面化学平面化反应室的内表面 平坦化气体。 内表面包含石英或碳化硅的主要成分。 在将清洁气体供应到反应室中并且将反应室设置在第一温度和第一压力下以启动清洁气体的同时进行除去。 在将平坦化气体供应到反应室中并且将反应室设置在第二温度和第二压力下以激活平坦化气体的同时进行平面化。 平坦化气体含氟和氟化氢。 第二温度在300至800℃的范围内。