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1.发明授权Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same 有权铁磁隧道结结构和磁阻效应器件和利用其的自旋电子器件公开(公告)号：US08872291B2
公开(公告)日：2014-10-28
申请号：US13627664
申请日：2012-09-26
Applicant: National Institute for Materials Science
Inventor： Hiroaki Sukegawa , Seiji Mitani , Tomohiko Niizeki , Tadakatsu Ohkubo , Kouichiro Inomata , Kazuhiro Hono , Masafumi Shirai , Yoshio Miura , Kazutaka Abe , Shingo Muramoto
CPC classification number: H01L43/10 , H01L27/228 , H01L43/08
Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.
Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。
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2.发明申请Ferromagnetic Tunnel Junction Structure and Magnetoresistive Effect Device and Spintronics Device Utilizing Same 有权铁磁隧道结结构和磁阻效应装置和利用其的自旋电子装置公开(公告)号：US20130221461A1
公开(公告)日：2013-08-29
申请号：US13627664
申请日：2012-09-26
Applicant: National Institute for Materials Science
Inventor： Hiroaki Sukegawa , Seiji Mitani , Tomohiko Niizeki , Tadakatsu Ohkubo , Kouichiro Inomata , Kazuhiro Hono , Masafumi Shirai , Yoshio Miura , Kazutaka Abe , Shingo Muramoto
IPC: H01L29/82
CPC classification number: H01L43/10 , H01L27/228 , H01L43/08
Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.
Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。
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公开(公告)号：US11105867B2
公开(公告)日：2021-08-31
申请号：US16074135
申请日：2017-01-31
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Thomas Scheike , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono , Kouichiro Inomata
Abstract: The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1−xAlx (0
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