公开(公告)号：US11004465B2

公开(公告)日：2021-05-11

申请号：US16311367

申请日：2017-06-23

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Shinya Kasai ,  Yukiko Takahashi ,  Pohan Cheng ,  Ikhtiar ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Kazuhiro Hono

IPC: G11B5/39 ,  H01F10/16 ,  H01F10/30 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01L29/82 ,  H01F10/13

Abstract: An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.