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公开(公告)号:US11004465B2
公开(公告)日:2021-05-11
申请号:US16311367
申请日:2017-06-23
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor: Shinya Kasai , Yukiko Takahashi , Pohan Cheng , Ikhtiar , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono
Abstract: An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.
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公开(公告)号:US11107976B2
公开(公告)日:2021-08-31
申请号:US16605418
申请日:2018-06-08
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor: Hiroaki Sukegawa , Ikhtiar , Shinya Kasai , Kazuhiro Hono , Xiandong Xu
IPC: H01L43/02 , H01L27/22 , H01L43/10 , H01L43/12 , H01L43/08 , H01L21/8239 , G11C11/16 , G11B5/39 , H01L27/105
Abstract: According to an embodiment, a magnetic tunnel junction includes a tunnel barrier layer provided between a first magnetic layer and a second magnetic layer. The tunnel barrier layer is a crystal body made of a stacked structure of a first insulating layer and a second insulating layer. The crystal body is oriented. The first insulating layer is made of an oxide of Mg1-xXx (0≤x≤0.15). X includes at least one element selected from the group consisting of Al and Ti. The second insulating layer is made of an oxide of an alloy including at least two elements selected from the group consisting of Mg, Al, Zn, and Li. Both the first magnetic layer and the second magnetic layer are made of an alloy including B and at least one element selected from the group consisting of Co and Fe.
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