公开(公告)号：US20230317433A1

公开(公告)日：2023-10-05

申请号：US18166585

申请日：2023-02-09

Applicant: NGK Insulators, Ltd.

Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Ikuhisa MORIOKA

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/002

Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface and incorporating an electrode; an electrically conductive plate provided on a lower surface side of the ceramic plate; an electrically conductive bonding layer that bonds the ceramic plate with the electrically conductive plate; a gas intermediate passage embedded in the electrically conductive bonding layer or provided at an interface between the electrically conductive bonding layer and the electrically conductive plate; a plurality of gas supply passages extending from the gas intermediate passage through the electrically conductive bonding layer and the ceramic plate to the wafer placement surface; and a gas introduction passage provided so as to extend through the electrically conductive plate and communicate with the gas intermediate passage, the number of the gas introduction passages being smaller than the number of the gas supply passages communicating with the gas intermediate passage.

公开(公告)号：US20230170191A1

公开(公告)日：2023-06-01

申请号：US17931916

申请日：2022-09-14

Applicant: NGK Insulators, Ltd.

Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Ikuhisa MORIOKA

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/2007

Abstract: A wafer placement table has a wafer placement surface that allows a wafer to be placed thereon. The wafer placement table includes a ceramic substrate having a built-in electrode, a cooling substrate including a refrigerant flow path, a metal joining layer that joins the ceramic substrate to the cooling substrate, and a plurality of small protrusions disposed on a reference plane of the wafer placement surface. The top surfaces of the small protrusions can support the lower surface of a wafer. The top surfaces of all the small protrusions are located on the same plane. In a flow path overlapping range of the wafer placement surface in which the wafer placement surface overlaps the refrigerant flow path in plan view, an area ratio of the small protrusions is minimized in a portion facing a most upstream portion of the refrigerant flow path.

公开(公告)号：US20230317430A1

公开(公告)日：2023-10-05

申请号：US18164799

申请日：2023-02-06

Applicant: NGK Insulators, Ltd.

Inventor： Ikuhisa MORIOKA ,  Hiroshi TAKEBAYASHI ,  Tatsuya KUNO ,  Seiya INOUE

IPC: H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32715 ,  H01J37/32642 ,  H01J37/32174 ,  H01L21/68757 ,  H01L21/68785 ,  H01J2237/334 ,  H01J2237/332

Abstract: The wafer placement table includes a ceramic plate and a conductive substrate. The ceramic plate includes a plate annular portion at an outer circumference of a plate central portion having a wafer placement surface. The plate annular portion has an annular focus ring placement surface. The conductive substrate is provided on a lower surface of the ceramic plate and used as a radio-frequency source electrode. At the same height from the focus ring placement surface in the plate annular portion, a focus ring attraction electrode and a focus-ring-side radio-frequency bias electrode to which a bias radio frequency is supplied are embedded.

公开(公告)号：US20250079230A1

公开(公告)日：2025-03-06

申请号：US18667048

申请日：2024-05-17

Applicant: NGK INSULATORS, LTD.

Inventor： Ikuhisa MORIOKA

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: The wafer placement table includes a ceramic plate, a thermal diffusion plate, a first adhesive layer, a cooling plate, and a second adhesive layer. The ceramic plate has a wafer placement surface on its upper surface, and includes built-in electrodes. The thermal diffusion plate is provided on the lower surface of the ceramic plate. The first adhesive layer bonds the ceramic plate and the thermal diffusion plate together. The cooling plate is provided on the lower surface of the thermal diffusion plate, and internally includes a refrigerant flow path. The second adhesive layer is provided between the thermal diffusion plate and the cooling plate. The second adhesive layer is provided with an adhesive part and a hollow part, the adhesive part bonding the thermal diffusion plate and the cooling plate together, the hollow part being a gap provided between the thermal diffusion plate and the cooling plate.

公开(公告)号：US20240162016A1

公开(公告)日：2024-05-16

申请号：US18307918

申请日：2023-04-27

Applicant: NGK INSULATORS, LTD.

Inventor： Ryuji TAMURA ,  Ikuhisa MORIOKA ,  Hiroya SUGIMOTO ,  Keita MINE

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J2237/002

Abstract: A wafer placement table includes a ceramic plate, a cooling plate, a space layer, and a space layer forming portion. The ceramic plate has a wafer placement portion at an upper surface of the ceramic plate and incorporates electrodes. The cooling plate is joined to a lower surface of the ceramic plate and has a refrigerant passage. The space layer is provided between the refrigerant passage and an upper surface of the cooling plate. The space layer forming portion is a part, surrounding the space layer, of the cooling plate. The space layer forming portion has a seam. The seam is formed by metal bonding without a seal member.

公开(公告)号：US20230144107A1

公开(公告)日：2023-05-11

申请号：US17818748

申请日：2022-08-10

Applicant: NGK Insulators, Ltd.

Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Ikuhisa MORIOKA

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68757 ,  H01L21/67109

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base having a refrigerant flow channel, and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a distance from a ceiling surface of the refrigerant flow channel to the wafer placement surface at a most downstream part of the refrigerant flow channel is shorter than the distance at a most upstream part of the refrigerant flow channel.

公开(公告)号：US20240120216A1

公开(公告)日：2024-04-11

申请号：US18510887

申请日：2023-11-16

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroya SUGIMOTO ,  Ikuhisa MORIOKA ,  Keita MINE ,  Ryuji TAMURA ,  Natsuki HIRATA ,  Yohei KAJIURA

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68785

Abstract: A method of adjusting heat uniformity on a wafer mounting surface of a wafer mount having a ceramic base including the wafer mounting surface which can heat a wafer through energization and a cooling plate includes: a) preparing the wafer mount including the cooling plate including: a base including a flow path of a coolant; and a lid detachable from the base; b) measuring a temperature distribution with the lid being attached on the base while heating through the energization and cooling; c) detaching the lid and locally adjusting a shape of the flow path when the temperature distribution does not satisfy a predetermined criterion; and d) remeasuring the temperature distribution after adjusting the shape of the flow path, with the lid being attached on the base while heating through the energization and cooling, wherein the steps c) and d) are repeated until the remeasured temperature distribution satisfies the criterion.

公开(公告)号：US20230146815A1

公开(公告)日：2023-05-11

申请号：US17819663

申请日：2022-08-15

Applicant: NGK Insulators, Ltd.

Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Ikuhisa MORIOKA

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68714 ,  H01L21/67109

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode; a cooling base having a refrigerant flow channel; and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a cross-sectional area of the refrigerant flow channel at a most downstream part of the refrigerant flow channel is less than the cross-sectional area at a most upstream part of the refrigerant flow channel.

公开(公告)号：US20200251371A1

公开(公告)日：2020-08-06

申请号：US16856224

申请日：2020-04-23

Applicant: NGK INSULATORS, LTD.

Inventor： Tatsuya KUNO ,  Ikuhisa MORIOKA ,  Kenichiro AIKAWA

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.