公开(公告)号：US20240120216A1

公开(公告)日：2024-04-11

申请号：US18510887

申请日：2023-11-16

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroya SUGIMOTO ,  Ikuhisa MORIOKA ,  Keita MINE ,  Ryuji TAMURA ,  Natsuki HIRATA ,  Yohei KAJIURA

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68785

Abstract: A method of adjusting heat uniformity on a wafer mounting surface of a wafer mount having a ceramic base including the wafer mounting surface which can heat a wafer through energization and a cooling plate includes: a) preparing the wafer mount including the cooling plate including: a base including a flow path of a coolant; and a lid detachable from the base; b) measuring a temperature distribution with the lid being attached on the base while heating through the energization and cooling; c) detaching the lid and locally adjusting a shape of the flow path when the temperature distribution does not satisfy a predetermined criterion; and d) remeasuring the temperature distribution after adjusting the shape of the flow path, with the lid being attached on the base while heating through the energization and cooling, wherein the steps c) and d) are repeated until the remeasured temperature distribution satisfies the criterion.

公开(公告)号：US20240203784A1

公开(公告)日：2024-06-20

申请号：US18342810

申请日：2023-06-28

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroya SUGIMOTO

IPC: H01L21/687 ,  C23C16/458 ,  H01L21/67

CPC classification number: H01L21/68785 ,  C23C16/4581 ,  C23C16/4586 ,  H01L21/67069 ,  H01L21/68757

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a circular wafer placement surface having a seal band along an outer periphery, and an annular focus ring placement surface located outside the wafer placement surface and below the wafer placement surface; a circular inner heater electrode embedded in the ceramic plate; an annular outer heater electrode embedded in the ceramic plate and surrounding the inner heater electrode; and a cooling plate disposed at a surface of the ceramic plate opposite the wafer placement surface, wherein the inner heater electrode overlaps at least a portion of the seal band in plan view, and an outer diameter of the inner heater electrode is not less than 97% of an outer diameter of the wafer placement surface.

公开(公告)号：US20240162016A1

公开(公告)日：2024-05-16

申请号：US18307918

申请日：2023-04-27

Applicant: NGK INSULATORS, LTD.

Inventor： Ryuji TAMURA ,  Ikuhisa MORIOKA ,  Hiroya SUGIMOTO ,  Keita MINE

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J2237/002

Abstract: A wafer placement table includes a ceramic plate, a cooling plate, a space layer, and a space layer forming portion. The ceramic plate has a wafer placement portion at an upper surface of the ceramic plate and incorporates electrodes. The cooling plate is joined to a lower surface of the ceramic plate and has a refrigerant passage. The space layer is provided between the refrigerant passage and an upper surface of the cooling plate. The space layer forming portion is a part, surrounding the space layer, of the cooling plate. The space layer forming portion has a seam. The seam is formed by metal bonding without a seal member.

公开(公告)号：US20150077895A1

公开(公告)日：2015-03-19

申请号：US14515736

申请日：2014-10-16

Applicant: NGK Insulators, Ltd.

Inventor： Asumi JINDO ,  Katsuhiro INOUE ,  Yuji KATSUDA ,  Takashi KATAIGI ,  Shingo AMANO ,  Hiroya SUGIMOTO

IPC: F28F3/12 ,  B23K1/19 ,  B23K1/00 ,  H01L21/683 ,  C04B35/56 ,  C04B35/58 ,  C04B37/00 ,  F28F21/08 ,  C04B35/565

CPC classification number: F28F3/12 ,  B23K1/0008 ,  B23K1/19 ,  C04B35/5611 ,  C04B35/5615 ,  C04B35/565 ,  C04B35/58092 ,  C04B35/645 ,  C04B37/006 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/3891 ,  C04B2235/404 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9607 ,  F28F21/086 ,  H01L21/6833 ,  Y10T428/249969

Abstract: A member 10 for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck 20, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33, a first metal bonding layer 34 between the first and second substrates 31 and 32, a second metal bonding layer 35 between the second and third substrates 32 and 33, and a refrigerant path 36. The first to third substrates 31 to 33 are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers 34 and 35 are formed by thermal compression bonding of the substrates 31 to 33 with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33.

Abstract translation: 半导体制造装置的构件10包括氧化铝静电卡盘20，冷却板30和冷却板卡盘接合层40.冷却板30包括第一至第三基板31至33，第一金属结合层34， 第一基板31和第二基板32，第二基板32和第三基板33之间的第二金属接合层35和制冷剂路径36.第一至第三基板31至33由含有Si，SiC的致密复合材料形成 ，和Ti。 金属接合层34和35通过基板31至33与介于第一和第二基板31,32之间以及第二和第三基板之间的Al-Si-Mg或Al-Mg金属接合材料的热压接而形成 32和33。

公开(公告)号：US20230284341A1

公开(公告)日：2023-09-07

申请号：US18157191

申请日：2023-01-20

Applicant: NGK Insulators, Ltd.

Inventor： Masaki ISHIKAWA ,  Hiroya SUGIMOTO

IPC: H05B3/14 ,  H05B3/26 ,  H05B3/00

CPC classification number: H05B3/143 ,  H05B3/265 ,  H05B3/0019 ,  H05B2203/005

Abstract: A ceramic heater includes: a ceramic plate having a wafer placement surface on a surface thereof; zone heaters embedded in the ceramic plate so as to correspond to zones defined by dividing the surface of the ceramic plate into multiple sections; terminals connected to ends of the zone heaters via internal wires of the ceramic plate; terminal collection regions in which the plurality of terminals are collectively arranged; and non-terminal regions in which no terminal is arranged. The ceramic heater includes, as the zone heaters, a terminal-collection-region zone heater provided in a zone corresponding to the terminal collection regions, and a non-terminal regions zone heater provided in a zone corresponding to the non-terminal regions.

公开(公告)号：US20150036261A1

公开(公告)日：2015-02-05

申请号：US14515800

申请日：2014-10-16

Applicant: NGK Insulators, Ltd.

Inventor： Asumi JINDO ,  Katsuhiro INOUE ,  Yuji KATSUDA ,  Takashi KATAIGI ,  Shingo AMANO ,  Hiroya SUGIMOTO

IPC: H01L21/67 ,  H01L21/683 ,  B21D53/02 ,  B32B37/10 ,  B32B38/00

CPC classification number: H01L21/67109 ,  B21D53/02 ,  B32B9/005 ,  B32B37/10 ,  B32B38/0012 ,  B32B2311/00 ,  B32B2311/24 ,  B32B2315/02 ,  C04B35/5615 ,  C04B35/575 ,  C04B35/62635 ,  C04B37/006 ,  C04B2235/3826 ,  C04B2235/3843 ,  C04B2235/3891 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/656 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/708 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68757 ,  Y10T29/4935

Abstract: A member 10 for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck 20, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33, a first metal bonding layer 34 between the first and second substrates 31 and 32, a second metal bonding layer 35 between the second and third substrates 32 and 33, and a refrigerant path 36. The first to third substrates 31 to 33 are formed of a dense composite material containing SiC, Ti3 SiC2, and TiC. The metal bonding layers 34 and 35 axe formed by thermal compression bonding of the substrates 31 to 33 with an Al—Si—Mg metal bonding material interposed between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33.

Abstract translation: 半导体制造装置的构件10包括AlN静电卡盘20，冷却板30和冷却板卡盘接合层40.冷却板30包括第一至第三基板31至33，第一和第三基板31至33， 第一基板31和第二基板32，第二基板32和第三基板33之间的第二金属接合层35和制冷剂路径36.第一至第三基板31至33由含有SiC，Ti 3 SiC2和TiC。 金属接合层34,35通过将基板31〜33与介于第一基板31与第二基板32之间以及第二基板32与第三基板33之间的Al-Si-Mg金属接合材料进行热压接而形成。

公开(公告)号：US20240057223A1

公开(公告)日：2024-02-15

申请号：US18180204

申请日：2023-03-08

Applicant: NGK Insulators, Ltd.

Inventor： Hiroya SUGIMOTO ,  Masaki ISHIKAWA

IPC: H05B3/28 ,  B32B18/00

CPC classification number: H05B3/283 ,  B32B18/00 ,  H05B2203/016 ,  H05B2203/017 ,  H05B2203/005 ,  B32B2260/02 ,  B32B2260/04

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface; resistance heating elements buried in the ceramic base; jumper layers having a planar shape and provided in a different layer from the resistance heating elements; an inner via connecting the jumper layer and an end of the resistance heating element; and a feed via connected to the jumper layer, wherein each of the resistance heating elements is provided for each of zones of a surface parallel to the wafer placement surface, each of the jumper layers is provided for each of the resistance heating elements, and a center-to-center distance between the inner via and the feed via in each of the jumper layers is greater than or equal to 50 mm.

公开(公告)号：US20230187261A1

公开(公告)日：2023-06-15

申请号：US18048486

申请日：2022-10-21

Applicant: NGK Insulators, Ltd.

Inventor： Hiroya SUGIMOTO ,  Masaki ISHIKAWA

IPC: H01L21/687 ,  H01L21/67 ,  H05B3/28 ,  H05B3/14 ,  H05B3/03

CPC classification number: H01L21/68757 ,  H01L21/67103 ,  H05B3/283 ,  H05B3/143 ,  H05B3/03

Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface; a first electrically conductive layer embedded in the ceramic substrate; and an electrically conductive via connected at one end to the first electrically conductive layer, wherein the electrically conductive via includes a plurality of columnar members connected together in a vertical direction, and wherein the area of the connection surface of one of two columnar members connected to each other is larger than the area of the connection surface of the other.

公开(公告)号：US20130093146A1

公开(公告)日：2013-04-18

申请号：US13706762

申请日：2012-12-06

Applicant: NGK INSULATORS, LTD.

Inventor： Yasufumi AIHARA ,  Hiroya SUGIMOTO ,  Shunsuke TANAKA ,  Kazuma OHBA ,  Jyunya WAKI

IPC: H01L21/683 ,  B32B15/04

CPC classification number: H01L21/6833 ,  B32B15/04 ,  C04B35/6269 ,  C04B35/63424 ,  C04B37/028 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2237/343 ,  C04B2237/346 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/525 ,  H01L21/67109 ,  H01L21/6831 ,  Y10T279/23 ,  Y10T428/31678

Abstract: To form an electrostatic chuck, a bonding sheet is applied onto the upper surface of a cooling plate and then the cooling plate is placed in a vacuum dryer at a pressure of 2,000 Pa or less for a pre-bake treatment at 120° C. to 130° C. for 15 to 40 hours, followed by natural cooling. A plate is then stacked on the bonding sheet so that the lower surface of the plate is aligned with the upper surface of the bonding sheet, which is applied onto the cooling plate. The resulting stacked body is placed in a heat-resistant resin bag, and is then placed in an autoclave and treated together for several hours under pressure and heat.

Abstract translation: 为了形成静电卡盘，将粘合片施加到冷却板的上表面上，然后将冷却板放置在2000Pa以下的真空干燥器中，以进行120℃的预烘烤处理，至 130℃15〜40小时，然后自然冷却。 然后在接合片上堆叠板，使得板的下表面与施加到冷却板上的接合片的上表面对准。 将所得到的层叠体放置在耐热树脂袋中，然后置于高压釜中并在加压和加热下一起处理数小时。