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    Semiconductor device manufacture with in-line hotspot detection
    1.
    发明授权
    Semiconductor device manufacture with in-line hotspot detection 有权

    公开(公告)号：US12057355B2

    公开(公告)日：2024-08-06

    申请号：US17607044

    申请日：2020-04-28

    Applicant: NOVA LTD

    Inventor： Michael Shifrin ,  Avron Ger

    IPC: G06F30/367 ,  G06F30/398 ,  H01L21/66 ,  G06F119/18

    CPC classification number: H01L22/24 ,  G06F30/367 ,  G06F30/398 ,  G06F2119/18

    Abstract: Controlling semiconductor device manufacture by acquiring training scatterometric signatures collected at training locations on training semiconductor wafers and corresponding to locations within a predefined design of a training semiconductor device, the training signatures collected after predefined processing steps during manufacture of the device on the training wafers, acquiring manufacturing outcome data associated with the training locations, training a prediction model using the training signatures and the manufacturing outcome data, and applying the prediction model to a candidate scatterometric signature to predict a manufacturing outcome, the candidate signature collected at a candidate location on a candidate semiconductor wafer, the candidate location corresponding to a location within the same predefined design of a candidate semiconductor device, the candidate signature collected after any of the processing steps during manufacture of the candidate device on the candidate wafer.

    Metrology method and system
    3.
    发明授权
    Metrology method and system 有权

    公开(公告)号：US11450541B2

    公开(公告)日：2022-09-20

    申请号：US16650405

    申请日：2018-08-29

    Applicant: NOVA LTD.

    Inventor： Vladimir Machavariani ,  Michael Shifrin ,  Daniel Kandel ,  Victor Kucherov ,  Igor Ziselman ,  Ronen Urenski ,  Matthew Sendelbach

    IPC: H01L21/67 ,  G01B15/02 ,  G05B13/04 ,  G01N23/04 ,  G01N23/06

    Abstract: A metrology method for use in determining one or more parameters of a patterned structure, the method including providing raw measured TEM image data, TEMmeas, data indicative of a TEM measurement mode, and predetermined simulated TEM image data including data indicative of one or more simulated TEM images of a structure similar to the patterned structure under measurements and a simulated weight map including weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure, performing a fitting procedure between the raw measured TEM image data and the predetermined simulated TEM image data and determining one or more parameters of the structure from the simulated TEM image data corresponding to a best fit condition.

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