公开(公告)号：US20200279783A1

公开(公告)日：2020-09-03

申请号：US16288152

申请日：2019-02-28

Applicant: GLOBALFOUNDRIES INC. ,  NOVA MEASURING INSTRUMENTS LTD.

Inventor： PADRAIG TIMONEY ,  TAHER KAGALWALA ,  ALOK VAID ,  SRIDHAR MAHENDRAKAR ,  DHAIRYA DIXIT ,  SHAY YOGEV ,  MATTHEW SENDELBACH ,  CHARLES KANG

IPC: H01L21/66 ,  G01N21/956 ,  H01L29/66 ,  G01N21/95

Abstract: Process control during manufacture of semiconductor devices by collecting scatterometric spectra of a FinFET reference fin structure on a reference semiconductor wafer at a first checkpoint proximate to a first processing step during fabrication of the reference semiconductor wafer, collecting reference measurements of the reference fin structure at a second checkpoint proximate to a second processing step subsequent to the first checkpoint, and performing machine learning to identify correspondence between the scatterometric spectra and values based on the reference measurements and train a prediction model for producing a prediction value associated with a corresponding production fin structure of the FinFET on a production semiconductor wafer based on scatterometric spectra of the production fin structure collected at the corresponding first checkpoint during fabrication of the production semiconductor wafer.

公开(公告)号：US20210217581A1

公开(公告)日：2021-07-15

申请号：US17170938

申请日：2021-02-09

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： VLADIMIR MACHAVARIANI ,  MICHAEL SHIFRIN ,  DANIEL KANDEL ,  VICTOR KUCHEROV ,  IGOR ZISELMAN ,  RONEN URENSKI ,  MATTHEW SENDELBACH

IPC: H01J37/26 ,  G06T7/00 ,  G06T7/60 ,  H01J37/22

Abstract: A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.

公开(公告)号：US20200294829A1

公开(公告)日：2020-09-17

申请号：US16650405

申请日：2018-08-29

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： VLADIMIR MACHAVARIANI ,  MICHAEL SHIFRIN ,  DANIEL KANDEL ,  VICTOR KUCHEROV ,  IGOR ZISELMAN ,  RONEN URENSKI ,  MATTHEW SENDELBACH

IPC: H01L21/67 ,  G01N23/04 ,  G01N23/06 ,  G01B15/02 ,  G05B13/04

Abstract: A control system for use in measuring one or more parameters of a patterned structure. The control system is configured as a computer system and comprises: an input utility configured to receive input data comprising raw measured TEM image data, TEMmeas, data indicative of a TEM measurement mode; and a data processor configured to process the raw measured TEM image data, TEMmeas, and generate output data indicative of one or more parameters of a patterned structure. The data processor comprises an optimization module configured and operable to utilize the data indicative of the TEM measurement mode and perform a fitting procedure between the raw measured TEM image data, TEMmeas, and predetermined simulated TEM image data, TEMsimul, and determine one or more parameters of the structure from the simulated image data corresponding to a best fit condition. The predetermined simulated TEM image data, TEMsimul, is based on a parametrized three-dimensional model of features of the patterned structure, and comprises one or more simulated TEM images and a simulated weight map comprising weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure.

公开(公告)号：US20190393016A1

公开(公告)日：2019-12-26

申请号：US16488974

申请日：2018-02-27

Applicant: NOVA MEASURING INSTRUMENTS LTD.

Inventor： VLADIMIR MACHAVARIANI ,  MICHAEL SHIFRIN ,  DANIEL KANDEL ,  VICTOR KUCHEROV ,  IGOR ZISELMAN ,  RONEN URENSKI ,  MATTHEW SENDELBACH

IPC: H01J37/26 ,  G06T7/00 ,  G06T7/60 ,  H01J37/22

Abstract: A control system is presented for use in measuring one or more parameters of a three-dimensional patterned structure. The control system is configured as a computer system comprising a data processor configured to receive and process raw measured TEM image data, TEMmeas, and generate output data indicative of one or more parameters of a patterned structure. The data processor comprises an optimization module configured and operable to utilize data indicative of one or more parameters of TEM measurement mode and perform a fitting procedure between the raw measured TEM image data, TEMmeas, and a predetermined simulated TEM image data, TEMsimui based on a parametrized three-dimensional model of features of the patterned structure, and generate simulated image data corresponding to a best fit condition, to thereby enable determination therefrom of the one or more parameters of the structure.