公开(公告)号：US12084388B2

公开(公告)日：2024-09-10

申请号：US18096568

申请日：2023-01-13

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chih-Hsing Wang ,  Cheng-Jung Ko ,  Chuen-Ming Gee ,  Chih-Wei Kuo ,  Hsueh-I Chen ,  Jun-Bin Huang ,  Ying-Tsung Chao

IPC: C04B35/56 ,  C01B32/21 ,  C04B35/626 ,  C04B35/634 ,  C04B35/64 ,  C04B35/645 ,  C30B23/00 ,  C30B35/00

CPC classification number: C04B35/5607 ,  C01B32/21 ,  C04B35/6264 ,  C04B35/63416 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/63444 ,  C04B35/645 ,  C04B2235/3839 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/661 ,  C30B23/00 ,  C30B35/002

Abstract: A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.

公开(公告)号：US11072871B2

公开(公告)日：2021-07-27

申请号：US16721935

申请日：2019-12-20

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chih-Wei Kuo ,  Dai-Liang Ma ,  Chia-Hung Tai ,  Bang-Ying Yu ,  Cheng-Jung Ko ,  Bo-Cheng Lin ,  Hsueh-I Chen

IPC: C30B35/00 ,  C30B23/00 ,  C30B23/02 ,  C23C14/24 ,  C23C14/06 ,  C30B29/36

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

公开(公告)号：US20210189590A1

公开(公告)日：2021-06-24

申请号：US16721935

申请日：2019-12-20

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chih-Wei Kuo ,  Dai-Liang Ma ,  Chia-Hung Tai ,  Bang-Ying Yu ,  Cheng-Jung Ko ,  Bo-Cheng Lin ,  Hsueh-I Chen

IPC: C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

公开(公告)号：US10385443B2

公开(公告)日：2019-08-20

申请号：US15353000

申请日：2016-11-16

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Dai-Liang Ma ,  Hsueh-I Chen ,  Bo-Cheng Lin ,  Cheng-Jung Ko ,  Ying-Cong Zhao ,  Chih-Wei Kuo ,  Shu-Yu Yeh

IPC: C30B29/36 ,  C23C14/24 ,  C30B23/00 ,  C23C14/06 ,  C23C14/26 ,  C30B23/02 ,  C30B23/06 ,  C30B29/40

Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

公开(公告)号：US20170137962A1

公开(公告)日：2017-05-18

申请号：US14941755

申请日：2015-11-16

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Dai-Liang Ma ,  Bang-Ying Yu ,  Hsueh-I Chen ,  Tsao-Chun Peng ,  Bo-Chen Lin ,  Zhi-Wei Guo

IPC: C30B23/00 ,  H01L21/02 ,  C30B29/40 ,  C30B23/06 ,  C30B29/36

CPC classification number: C30B23/002 ,  C30B23/025 ,  C30B23/06 ,  C30B29/36 ,  C30B29/403

Abstract: A fabricating method for growing a single crystal of a multi-type compound comprises steps of: (a) providing a seed crystal at a deposition region; (b) providing a powder material at a high purity source region; and (c) undertaking a vacuum process, a heating process, a growing process, a cooling process to prepare the singe crystal, wherein a heating source is used to move to control a temperature gradient within a gas temperature control region to form a temperature gradient motion so that the temperature gradient presents a variation. By reducing the possibility of other deficiencies being continuously induced in the following crystal growth process owing to the local slime occurring at the rear side of the seed crystal from the void deficiencies at the rear side of the original seed crystal may be excluded, but also the possibility of other multi-type bodies being induced by the above vacancies.