公开(公告)号：US3894295A

公开(公告)日：1975-07-08

申请号：US39848073

申请日：1973-09-18

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN ,  RALPH JOHN ERNEST

IPC: H04N5/335 ,  H01J1/34 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L31/112 ,  H01L31/14 ,  H01L31/153 ,  H01L15/00

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1123 ,  H01L31/1126

Abstract: An image intensifier or converter is described comprising an array of JFETs having separate gates which when pulsed block the channel of the associated JFET. Each JFET is connected in series with a display element, such as an electroluminescent diode. Incident imaging photons absorbed in the channel regions unblock the associated FET causing radiation emission from the associated display element.

Abstract translation: 描述了一种图像增强器或转换器，其包括具有分离的栅极的JFET阵列，当脉冲阻挡相关JFET的沟道时。 每个JFET与诸如电致发光二极管的显示元件串联连接。 在通道区域中吸收的入射成像光子解除阻塞相关联的FET，从而引起来自相关显示元件的辐射。

公开(公告)号：US3887936A

公开(公告)日：1975-06-03

申请号：US39849173

申请日：1973-09-18

Applicant: PHILIPS CORP

Inventor： SHANNON JOHN MARTIN ,  RALPH JOHN ERNEST

IPC: H01J1/34 ,  H01L21/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L31/10 ,  H01L31/112 ,  H01L31/153 ,  H01L17/00

CPC classification number: H01L31/153 ,  H01J1/34 ,  H01J2201/3423 ,  H01L21/00 ,  H01L27/1446 ,  H01L27/14679 ,  H01L27/14681 ,  H01L31/1123 ,  H01L31/1126

Abstract: A solid state radiation sensitive device is described employing JFETs as the sensitive elements. Two terminal construction is achieved by using a common conductor to capacitively couple to the JFET gate and to one of the source and drain connections.

Abstract translation: 使用JFET作为敏感元件描述了固态辐射敏感器件。 通过使用公共导体电容耦合到JFET栅极和源极和漏极连接中的一个来实现两个端子结构。