公开(公告)号：US20240322062A1

公开(公告)日：2024-09-26

申请号：US18609943

申请日：2024-03-19

申请人： X-FAB Global Services GmbH

发明人： Daniel Gäbler ,  Pablo Siles ,  Qiang Ai ,  Tamer Abdulrahman ,  Tong Hong Tan

IPC分类号： H01L31/112 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/1126 ,  H01L31/022408 ,  H01L31/182

摘要： A method of forming a light sensitive semiconductor structure is provided. The method includes providing a semiconductor wafer comprising a semiconductor layer comprising a light sensitive region, providing a gate structure comprising an insulation layer on said semiconductor layer and a polysilicon layer on said insulation layer, providing a contact stop layer on said gate structure, wherein said contact stop layer covers said light sensitive region, providing an etch mask, etching said contact stop layer using said etch mask to form said opening, etching said polysilicon layer using said etch mask, and providing a plurality of metal layers comprising a first metal layer electrically connected to said semiconductor layer and a plurality of dielectric layers between metal layers of said plurality of metal layers.

公开(公告)号：US20230327043A1

公开(公告)日：2023-10-12

申请号：US17910179

申请日：2021-02-23

申请人： Gesellschaft für Angewandte Mikro- und Optoelektronik mit beschränkter Haftung - AMO GmbH

发明人： Daniel SCHALL

IPC分类号： H01L31/112 ,  H01L25/04 ,  H01L31/0328 ,  G02F1/19

CPC分类号： H01L31/1126 ,  H01L25/042 ,  H01L31/0328 ,  G02F1/19

摘要： The present invention relates to a photodetector (3) comprising: a longitudinal portion (12) of a waveguide (11) which comprises or is formed by two waveguide segments (12a, 12b), which extend at least substantially parallel to one another in the longitudinal direction and are preferably distanced from one another in the transverse direction, forming a gap (14) between them; and an active element (13), which overlies the longitudinal portion (12) of the waveguide and comprises at least one material or consists of at least one material that absorbs electromagnetic radiation of at least one wavelength and generates an electric photosignal as a result of the absorption, the two waveguide segments (12a, 12b) each being in contact, at least in some portions, on at least one side, in particular on the side facing the active element (14), with a gate electrode (15a, 15b) which preferably comprises silicon or consists of silicon.

公开(公告)号：US20230245577A1

公开(公告)日：2023-08-03

申请号：US18002691

申请日：2021-07-01

申请人： The Penn State Research Foundation

发明人： Saptarshi Das ,  Darsith Jayachandran

IPC分类号： G08G9/02 ,  H01L31/112 ,  G08G1/16 ,  G08G5/04

CPC分类号： G08G9/02 ,  H01L31/1126 ,  G08G1/16 ,  G08G5/045

摘要： A compact collision detector can be configured for low power operation to facilitate collision avoidance. In one embodiment, a nanoscale collision detector can be based on a photodetector, stacked on top of a non-volatile and programmable memory architecture that imitates the escape response of LGMD neuron at a frugal energy expenditure of few nanojoules (nJ) and at the same time can offer orders of magnitude benefit in device footprint (e.g. by having a relatively small size). Embodiments of the collision detector can be utilized in smart, low-cost, task-specific, energy efficient and miniaturized collision detection systems configured for collision avoidance.

公开(公告)号：US09812596B2

公开(公告)日：2017-11-07

申请号：US15198788

申请日：2016-06-30

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kyungsang Cho ,  Chanwook Baik ,  Heejeong Jeong

IPC分类号： H01L31/0232 ,  H01L31/032 ,  H01L31/12 ,  H01L27/146 ,  H01L31/112 ,  H01L31/0352 ,  B82Y20/00

CPC分类号： H01L31/02322 ,  B82Y20/00 ,  H01L27/14647 ,  H01L31/032 ,  H01L31/035218 ,  H01L31/1126 ,  Y10S977/774 ,  Y10S977/954

摘要： Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the photoactive layer may include a nanostructure layer configured to generate a charge in response to light and a semiconductor layer adjacent to the nanostructure layer. The nanostructure layer may include one or more quantum dots. The semiconductor layer may include an oxide semiconductor. The photoelectric device may include a first electrode and a second electrode that contact different regions of the photoactive layer. A number of the photoelectric conversion elements may be arranged in a horizontal direction or may be stacked in a vertical direction. The photoelectric conversion elements may absorb and thereby detect light in different wavelength bands without the use of color filters.

公开(公告)号：US09577004B2

公开(公告)日：2017-02-21

申请号：US14576028

申请日：2014-12-18

申请人： CANON KABUSHIKI KAISHA

发明人： Mahito Shinohara ,  Masahiro Kobayashi ,  Masatsugu Itahashi

IPC分类号： H01L27/146 ,  H01L29/66 ,  H01L29/808 ,  H01L29/10 ,  H01L31/112

CPC分类号： H01L27/14689 ,  H01L27/14679 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/66901 ,  H01L29/66909 ,  H01L29/808 ,  H01L29/8083 ,  H01L31/1126

摘要： One embodiment according to the present disclosure is an imaging apparatus including pixels. The pixel includes a junction type field effect transistor (JFET) provided in a semiconductor substrate. The JFET includes a gate region and a channel region. An orthogonal projection of the gate region onto a plane parallel to a surface of the semiconductor substrate intersects an orthogonal projection of the channel region onto the plane. Each of a source-side portion of the orthogonal projection of the channel region and a drain-side portion of the orthogonal projection of the channel region protrudes out of the orthogonal projection of the gate region.

摘要翻译： 根据本公开的一个实施例是包括像素的成像装置。 像素包括设置在半导体衬底中的结型场效应晶体管（JFET）。 JFET包括栅极区和沟道区。 栅极区域与平行于半导体衬底的表面的平面的正交投影与通道区域的正交投影相交。 通道区域的正交投影的源极侧部分和沟道区域的正交投影的漏极侧部分的每一个突出于栅极区域的正交投影之外。

公开(公告)号：US20150053980A1

公开(公告)日：2015-02-26

申请号：US14143176

申请日：2013-12-30

申请人： Korea Institute of Science and Technology

发明人： Seung Yong LEE ,  Jin Dong SONG ,  So-Hye CHO ,  Jin Ock PARK ,  Jong-Ku PARK

IPC分类号： H01L31/112 ,  H01L31/0352 ,  H01L27/146

CPC分类号： H01L31/1126 ,  H01L31/0224 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/09

摘要： Disclosed is a photodetector including an electrically conductive substrate, a first electrode formed on the substrate, a second electrode disposed to be spaced apart from the first electrode, a plasmonic nanostructure positioned between the first electrode and the second electrode and having surface plasmon resonance, and a resistance measuring device or an electrical conductivity measuring device connected to the first electrode and the second electrode.

摘要翻译： 公开了一种光电检测器，其包括导电基板，形成在基板上的第一电极，设置成与第一电极间隔开的第二电极，位于第一电极和第二电极之间并具有表面等离子体共振的等离子体纳米结构，以及 连接到第一电极和第二电极的电阻测量装置或电导率测量装置。

公开(公告)号：US20140374808A1

公开(公告)日：2014-12-25

申请号：US14365047

申请日：2012-12-11

申请人： PMDT Technologies GmbH

发明人： Matthias Franke ,  Nils Friedrich ,  Jens Prima

IPC分类号： H01L31/112 ,  H01L27/146

CPC分类号： H01L31/1126 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/14643

摘要： The present invention relates to a semiconductor component (1) having a photosensitive semiconductor layer (2), wherein the photosensitive semiconductor layer (2) is doped with a first doping density (D1) of a first conduction type which brings about an effective conversion of electromagnetic radiation penetrating into the semiconductor layer (2) into electrical charge carriers, having at least two modulation gates (4A, 4B) which are arranged at a mutual spacing and are each formed by a trench gate extending from a surface (3) of the semiconductor layer (2) and perpendicular to this surface (3) into the semiconductor layer (2), and having at least two readout diodes (5A, 5B) arranged at a mutual spacing and near the surface (3) between the two modulation gates (4A, 4B). In order to provide a semiconductor component for distance detection having improved characteristics with regard to sensitivity and resolution, the invention proposes that a separating implant (6) be inserted into the semiconductor layer (2) between the two readout diodes (5A, 5B), said implant having the same conduction type as the semiconductor layer (2), but having a second, higher doping density (D2).

摘要翻译： 本发明涉及具有光敏半导体层（2）的半导体元件（1），其中光敏半导体层（2）被掺杂有第一导电类型的第一掺杂密度（D1），其导致有效转换 电磁辐射穿透到半导体层（2）中的电荷载体中，具有至少两个互调间隔配置的调制栅极（4A，4B），并且各自由沟槽栅极形成，沟槽栅极从 半导体层（2）并且垂直于该表面（3）进入半导体层（2），并且具有以相互间隔布置的两个读出二极管（5A，5B），并且在两个调制门 （4A，4B）。 为了提供关于灵敏度和分辨率具有改进特性的距离检测用半导体元件，本发明提出将分离植入物（6）插入到两个读出二极管（5A，5B）之间的半导体层（2）中， 所述植入物具有与半导体层（2）相同的导电类型，但具有第二较高的掺杂密度（D2）。

公开(公告)号：US20140361356A1

公开(公告)日：2014-12-11

申请号：US14293164

申请日：2014-06-02

申请人： ZENA TECHNOLOGIES, INC.

发明人： Young-June Yu ,  Munib Wober

IPC分类号： H01L27/146 ,  H01L31/112 ,  H01L31/0232 ,  H01L31/0352

CPC分类号： H01L27/14612 ,  H01L27/1461 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14645 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/101 ,  H01L31/102 ,  H01L31/1126 ,  Y02E10/50

摘要： An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.

摘要翻译： 一种形成为组合CMOS制造工艺和纳米线制造工艺的有源像素阵列的成像器件。 阵列中的像素可以包括围绕纳米线的单个或多个摄像机。 摄影门控制纳米线中的电位分布，允许在纳米线中积累光生电荷并传输电荷用于信号读出。 每个像素可以包括读出电路，其可以包括复位晶体管，电荷转移开关晶体管，源极跟随放大器和像素选择晶体管。 纳米线通常构造为在体半导体衬底上的垂直杆，以接收入射到纳米线尖端的光能。 纳米线可以被配置为用作被配置为将光引导到衬底的光电检测器或波导。 可以使用成像装置检测不同波长的光。

公开(公告)号：US20130009040A1

公开(公告)日：2013-01-10

申请号：US13543556

申请日：2012-07-06

申请人： Young-June YU ,  Munib Wober

发明人： Young-June YU ,  Munib Wober

IPC分类号： H01L27/00

CPC分类号： H01L27/14612 ,  H01L27/1461 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14645 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/0352 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/101 ,  H01L31/102 ,  H01L31/1126 ,  Y02E10/50

摘要： “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.”

摘要翻译： 一种形成为组合CMOS制造工艺和纳米线制造工艺的有源像素阵列的成像器件。 阵列中的像素可以包括围绕纳米线的单个或多个摄像机。 摄影门控制纳米线中的电位分布，允许在纳米线中积累光生电荷并传输电荷用于信号读出。 每个像素可以包括读出电路，其可以包括复位晶体管，电荷转移开关晶体管，源极跟随放大器和像素选择晶体管。 纳米线通常构造为在体半导体衬底上的垂直杆，以接收入射到纳米线尖端的光能。 纳米线可以被配置为用作被配置为将光引导到衬底的光电检测器或波导。 可以使用成像装置检测不同波长的光。

公开(公告)号：US6166769A

公开(公告)日：2000-12-26

申请号：US831640

申请日：1997-04-09

申请人： Kazuya Yonemoto ,  Ryoji Suzuki

发明人： Kazuya Yonemoto ,  Ryoji Suzuki

IPC分类号： H01L27/146 ,  H01L31/112 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N3/14 ,  H04N5/217 ,  H04N5/335

CPC分类号： H01L31/1126 ,  H01L27/14643 ,  H04N5/3658 ,  H04N5/3745 ,  H04N5/378

摘要： A solid-state imaging device has a matrix of pixels arranged in rows and columns, a first signal holding circuit for holding a first signal transferred from each of the pixels through a vertical signal line, a second signal holding circuit for holding a second signal transferred from the each pixel through the vertical signal line, and a horizontal signal line group connected to the first signal holding circuit and the second signal holding circuit. The first signal holding circuit and the second signal holding circuit are axially symmetrically positioned one on each side of the horizontal signal line group.

摘要翻译： 固态成像装置具有排列成行和列的像素矩阵，第一信号保持电路，用于保持通过垂直信号线从每个像素传送的第一信号;第二信号保持电路，用于保持传送的第二信号 从每个像素通过垂直信号线，以及连接到第一信号保持电路和第二信号保持电路的水平信号线组。 第一信号保持电路和第二信号保持电路在水平信号线组的每一侧上一个轴对称地定位。