公开(公告)号：US09476121B2

公开(公告)日：2016-10-25

申请号：US14489730

申请日：2014-09-18

Applicant: PIEZONICS CO., LTD. ,  Korea Institute of Industrial Technology

Inventor： Chul Soo Byun ,  Man Cheol Han

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/67

CPC classification number: C23C16/45565 ,  C23C16/40 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/67069

Abstract: A showerhead for chemical vapor deposition includes: a plurality of reactive gas showerhead modules separated each other and having the same number as the number of kinds of reactive gases injected from the showerhead, each having a mixing zone in the reactive gas showerhead module to induce a mixing of a reactive gas and an injection support gas used to regulate the injection velocity of the reactive gas and a plurality of reactive gas injection tubes connected to the bottom surface of the reactive gas showerhead module for injecting the reactive gas mixed with the injection support gas over the substrate; and a purge gas showerhead module mounted under the reactive gas showerhead modules, with a purge gas supply port for supplying a purge gas to the purge gas showerhead module.

Abstract translation: 用于化学气相沉积的喷头包括：多个反应性气体喷头模块，其彼此分离并且具有与从喷头喷射的反应气体的种类的数量相同的数量，每个反应气体喷头模块在反应性气体喷头模块中具有混合区域以诱导 用于调节反应性气体的喷射速度的反应气体和注入支撑气体的混合以及连接到反应性气体喷头模块的底表面的多个反应气体注入管，用于注入与喷射支持气体混合的反应气体 在基材上; 以及安装在反应性气体喷头模块下方的吹扫气喷头模块，其具有用于向吹扫气喷头模块供应净化气体的吹扫气体供给口。

公开(公告)号：US20150000594A1

公开(公告)日：2015-01-01

申请号：US14489730

申请日：2014-09-18

Applicant: PIEZONICS CO., LTD. ,  KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chul Soo Byun ,  Man Cheol Han

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/40 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/67069

Abstract: A showerhead for chemical vapor deposition includes: a plurality of reactive gas showerhead modules separated each other and having the same number as the number of kinds of reactive gases injected from the showerhead, each having a mixing zone in the reactive gas showerhead module to induce a mixing of a reactive gas and an injection support gas used to regulate the injection velocity of the reactive gas and a plurality of reactive gas injection tubes connected to the bottom surface of the reactive gas showerhead module for injecting the reactive gas mixed with the injection support gas over the substrate; and a purge gas showerhead module mounted under the reactive gas showerhead modules, with a purge gas supply port for supplying a purge gas to the purge gas showerhead module.

Abstract translation: 用于化学气相沉积的喷头包括：多个反应性气体喷头模块，其彼此分离并且具有与从喷头喷射的反应气体的种类的数量相同的数量，每个反应气体喷头模块在反应性气体喷头模块中具有混合区域以诱导 用于调节反应性气体的喷射速度的反应气体和注入支撑气体的混合以及连接到反应性气体喷头模块的底表面的多个反应气体注入管，用于注入与喷射支持气体混合的反应气体 在基材上; 以及安装在反应性气体喷头模块下方的吹扫气喷头模块，其具有用于向吹扫气喷头模块供应净化气体的吹扫气体供给口。

公开(公告)号：US09469900B2

公开(公告)日：2016-10-18

申请号：US14489660

申请日：2014-09-18

Applicant: PIEZONICS CO., LTD. ,  Korea Institute of Industrial Technology

Inventor： Chul Soo Byun ,  Man Cheol Han

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/67

CPC classification number: C23C16/45565 ,  C23C16/40 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/67069

Abstract: A method for chemical vapor deposition using a showerhead through which at least one reactive gas and a purge gas are injected over a substrate, wherein the method includes: disposing the showerhead such that the bottom surface of the showerhead is spaced apart from the substrate by a predetermined distance; supplying a reactive gas and an injection support gas into the showerhead, wherein reactive gases of different kinds are respectively delivered into compartments formed at inside of the showerhead; mixing each reactive gas with its corresponding injection support gas in each mixing zone at inside of the showerhead; supplying a purge gas into a separated compartment at inside of the showerhead; and injecting the reactive gas mixed with the injection support gas and the purge gas through a plurality of reactive gas exits and a plurality of purge gas exits formed at the bottom surface of the showerhead, respectively.

Abstract translation: 一种使用喷头的化学气相沉积的方法，至少一个反应气体和吹扫气体通过该喷头喷射到基板上，其中所述方法包括：将所述淋浴喷头设置成使得所述喷头的底表面与所述基板间隔开一个 预定距离 将反应性气体和注入支撑气体供应到所述喷头中，其中将不同种类的反应性气体分别输送到形成在所述喷头内部的隔室中; 将每个反应气体与其喷射支撑气体在喷淋头内部的每个混合区域混合; 在喷头内部将吹扫气体供应到分离的隔室中; 以及分别通过多个反应性气体出口和在喷头的底表面处形成的多个吹扫气体出口注入与喷射支持气体和吹扫气体混合的反应气体。

公开(公告)号：US20150004313A1

公开(公告)日：2015-01-01

申请号：US14489660

申请日：2014-09-18

Applicant: PIEZONICS CO., LTD. ,  Korea Institute of Industrial Technology

Inventor： Chul Soo Byun ,  Man Cheol Han

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/40 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/67069

Abstract: A method for chemical vapor deposition using a showerhead through which at least one reactive gas and a purge gas are injected over a substrate, wherein the method includes: disposing the showerhead such that the bottom surface of the showerhead is spaced apart from the substrate by a predetermined distance; supplying a reactive gas and an injection support gas into the showerhead, wherein reactive gases of different kinds are respectively delivered into compartments formed at inside of the showerhead; mixing each reactive gas with its corresponding injection support gas in each mixing zone at inside of the showerhead; supplying a purge gas into a separated compartment at inside of the showerhead; and injecting the reactive gas mixed with the injection support gas and the purge gas through a plurality of reactive gas exits and a plurality of purge gas exits formed at the bottom surface of the showerhead, respectively.

Abstract translation: 一种使用喷头的化学气相沉积的方法，至少一个反应气体和吹扫气体通过该喷头喷射到基板上，其中所述方法包括：将所述淋浴喷头设置成使得所述喷头的底表面与所述基板间隔开一个 预定距离 将反应性气体和注入支撑气体供应到所述喷头中，其中将不同种类的反应性气体分别输送到形成在所述喷头内部的隔室中; 将每个反应气体与其喷射支撑气体在喷淋头内部的每个混合区域混合; 在喷头内部将吹扫气体供应到分离的隔室中; 以及分别通过多个反应性气体出口和在喷头的底表面处形成的多个吹扫气体出口注入与喷射支持气体和吹扫气体混合的反应气体。

公开(公告)号：US10704145B2

公开(公告)日：2020-07-07

申请号：US15518758

申请日：2015-10-13

Applicant: Korea Institute Of Industrial Technology

Inventor： Chul Soo Byun ,  Man Cheol Han

IPC: C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C16/458 ,  C23C16/46

Abstract: A reaction chamber for a chemical vapor apparatus is disclosed. The reaction chamber for the chemical vapor apparatus comprises a housing including an internal space and a susceptor disposed in the internal space so that a substrate is loaded on an upper surface of the susceptor. A shower head is disposed above the susceptor in the internal space of the housing to spray process gas towards the substrate side. An inner barrel with open top and bottom is placed inside the internal space of the reaction chamber so that an upper edge of the barrel is positioned near the showerhead to enclose the substrate and the susceptor. A driving part is connected to the inner barrel. When it is needed to replace the susceptor and the substrate, the inner barrel is changed into an open state in which the substrate and the susceptor disposed in the inner barrel are exposed to the outside of the inner barrel by an operation of the driving part. The inside of the reaction chamber for the chemical vapor apparatus is always closed and thus the reaction chamber is capable of easily replacing a substrate or a susceptor while the vacuum in the reaction chamber is still maintained.