公开(公告)号：US20170098703A1

公开(公告)日：2017-04-06

申请号：US15381120

申请日：2016-12-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASAHIRO OGAWA ,  MASAHIRO ISHIDA ,  DAISUKE SHIBATA ,  RYO KAJITANI

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7787 ,  H01L21/02414 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7847

Abstract: Provided is a semiconductor device in which electron mobility is improved by applying sufficiently large tensile stress in a predetermined direction without occurrence of cracks in a nitride semiconductor. The semiconductor device includes: substrate (101), electron transit layer (103) that is disposed on substrate (101) and is formed by GaN; and electron supply layer (104) that is disposed on electron transit layer (103) and is formed by AlGaN. A coefficient of thermal expansion of substrate (101) is different between a first direction in a main surface of substrate (101) and a second direction that is perpendicular to the first direction in the main surface, and tensile stress occurs in electron transit layer (103).