公开(公告)号：US20180153027A1

公开(公告)日：2018-05-31

申请号：US15730696

申请日：2017-10-11

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNKO IWANAGA ,  TETSUYA TAKAYANAGI ,  MASAHIRO ISHIDA

IPC: H05H1/44 ,  C02F1/461 ,  C02F1/46 ,  C02F1/48 ,  H05H1/30 ,  H05H1/36 ,  H05H1/50

CPC classification number: H05H1/44 ,  C02F1/4608 ,  C02F1/46109 ,  C02F1/48 ,  C02F2001/46138 ,  H05H1/30 ,  H05H1/36 ,  H05H1/48 ,  H05H1/50

Abstract: A liquid treatment apparatus includes a liquid storing vessel, a first electrode, a second electrode at least partly arranged inside the vessel, a tubular first insulator surrounding a first-electrode lateral surface with a first space interposed therebetween, and including a first opening in an end surface in contact with the liquid, a tubular second insulator surrounding the first-electrode lateral surface inside the first insulator, a gas supply device supplying gas into the first space and ejecting the gas into the liquid through the first opening, and a power supply applying a voltage between the first and second electrodes and producing plasma. The second insulator is arranged with a second space interposed between the first and second insulators. Portions of the first and second insulators, those portions being positioned inside the vessel, are covered with the gas when the gas is supplied into the first space by the gas supply device.

公开(公告)号：US20150303293A1

公开(公告)日：2015-10-22

申请号：US14790064

申请日：2015-07-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KENICHIRO TANAKA ,  SHINICHI KOHDA ,  MASAHIRO ISHIDA ,  TETSUZO UEDA

IPC: H01L29/778 ,  H01L29/207 ,  H01L29/06 ,  H01L29/36 ,  H01L29/205

CPC classification number: H01L29/7787 ,  H01L29/0684 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7786

Abstract: A field-effect transistor includes a codoped layer made of AlxGa1-xN (0≦x≦1) and formed on a p-type Si substrate, a GaN layer formed on the codoped layer, and an AlGaN layer formed on the GaN layer. The codoped layer contains C and Si as impurity elements. The impurity concentration of C in the codoped layer is equal to or higher than 5×1017/cm3. The impurity concentration of Si in the codoped layer is lower than the impurity concentration of C. The impurity concentration of C in the GaN layer is equal to or lower than 1×1017/cm3. The thickness of the GaN layer is equal to or greater than 0.75 μm.

Abstract translation: 场效应晶体管包括由Al x Ga 1-x N（0＆nlE; x＆nlE; 1）构成并且形成在p型Si衬底上的共掺层，在共掺层上形成的GaN层和形成在GaN层上的AlGaN层。 共掺层含有C和Si作为杂质元素。 共掺层中的C的杂质浓度等于或高于5×1017 / cm3。 共掺层中Si的杂质浓度低于C的杂质浓度.Ca层中的C的杂质浓度等于或低于1×1017 / cm3。 GaN层的厚度等于或大于0.75μm。

公开(公告)号：US20150171173A1

公开(公告)日：2015-06-18

申请号：US14636163

申请日：2015-03-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIDEKAZU UMEDA ,  MASAHIRO ISHIDA ,  TETSUZO UEDA ,  DAISUKE UEDA

IPC: H01L29/205 ,  H01L29/36 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/205 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1066 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/7786 ,  H01L29/86

Abstract: A nitride semiconductor structure of the present disclosure comprises a semiconductor substrate, and a layer formed over the semiconductor substrate and comprising plural nitride semiconductor layers. The semiconductor substrate has, from a side thereof near the layer comprising the plural nitride semiconductor layers, a surface region and an internal region in this order. The surface region has a resistivity of 0.1 Ωcm or more, and the internal region has a resistivity of 1000 Ωcm or more.

Abstract translation: 本公开的氮化物半导体结构包括半导体衬底和形成在半导体衬底上并包括多个氮化物半导体层的层。 半导体衬底从其包括多个氮化物半导体层的层的一侧开始依次具有表面区域和内部区域。 表面区域的电阻率为0.1Ω·cm〜（cm）以上，内部区域的电阻率为1000ΩΩ·cm以上。

公开(公告)号：US20170098703A1

公开(公告)日：2017-04-06

申请号：US15381120

申请日：2016-12-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASAHIRO OGAWA ,  MASAHIRO ISHIDA ,  DAISUKE SHIBATA ,  RYO KAJITANI

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7787 ,  H01L21/02414 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7847

Abstract: Provided is a semiconductor device in which electron mobility is improved by applying sufficiently large tensile stress in a predetermined direction without occurrence of cracks in a nitride semiconductor. The semiconductor device includes: substrate (101), electron transit layer (103) that is disposed on substrate (101) and is formed by GaN; and electron supply layer (104) that is disposed on electron transit layer (103) and is formed by AlGaN. A coefficient of thermal expansion of substrate (101) is different between a first direction in a main surface of substrate (101) and a second direction that is perpendicular to the first direction in the main surface, and tensile stress occurs in electron transit layer (103).

公开(公告)号：US20160329421A1

公开(公告)日：2016-11-10

申请号：US15216691

申请日：2016-07-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE SHIBATA ,  KENICHIRO TANAKA ,  MASAHIRO ISHIDA ,  SHINICHI KOHDA

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/861 ,  H01L29/417 ,  H01L29/872 ,  H01L29/04 ,  H01L29/205

CPC classification number: H01L29/7788 ,  H01L29/045 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41741 ,  H01L29/42316 ,  H01L29/7789 ,  H01L29/861 ,  H01L29/872

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate, and which has a C-plane as a main surface; a second nitride semiconductor layer which is formed on the first nitride semiconductor layer, and which has p-type conductivity; and a first opening which is formed in the second nitride semiconductor layer, and which reaches the first nitride semiconductor layer. The nitride semiconductor device further includes a third nitride semiconductor layer which is formed so as to cover the first opening in the second nitride semiconductor layer; a first electrode which is formed on the third nitride semiconductor layer so as to include a region of the first opening; and a second electrode which is formed on the rear surface of the substrate.

Abstract translation: 根据本公开的氮化物半导体器件包括：衬底; 第一氮化物半导体层，其形成在所述基板上，并且具有C面作为主表面; 形成在第一氮化物半导体层上并具有p型导电性的第二氮化物半导体层; 以及形成在第二氮化物半导体层中并到达第一氮化物半导体层的第一开口。 氮化物半导体器件还包括形成为覆盖第二氮化物半导体层中的第一开口的第三氮化物半导体层; 第一电极，其形成在所述第三氮化物半导体层上以包括所述第一开口的区域; 以及形成在基板的后表面上的第二电极。

公开(公告)号：US20150287791A1

公开(公告)日：2015-10-08

申请号：US14742740

申请日：2015-06-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHINICHI KOHDA ,  MASAHIRO ISHIDA

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/10

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/1079 ,  H01L29/7783 ,  H01L29/7786

Abstract: An object of the present invention is to provide a nitride semiconductor device and a nitride semiconductor substrate in each of which a nitride semiconductor layer formed on a silicon substrate is improved in crystallinity to realize a decrease in on-resistance of a field-effect transistor. The nitride semiconductor device includes a silicon substrate, and a first nitride semiconductor layer formed over the silicon substrate and including a nitride semiconductor, wherein a Si axial direction of the silicon substrate is different from a axial direction of the first nitride semiconductor layer.

Abstract translation: 本发明的目的是提供一种氮化物半导体器件和氮化物半导体衬底，其中形成在硅衬底上的氮化物半导体层的结晶度提高，从而实现场效应晶体管的导通电阻的降低。 氮化物半导体器件包括硅衬底和形成在硅衬底上并包括氮化物半导体的第一氮化物半导体层，其中硅衬底的Si 111轴向方向与第一衬底的<0001>轴向方向不同 氮化物半导体层。