公开(公告)号：US12132123B2

公开(公告)日：2024-10-29

申请号：US17398129

申请日：2021-08-10

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

发明人： Hiroki Miyake

IPC分类号： H01L29/86 ,  H01L21/02 ,  H01L29/861 ,  H01L31/0352

CPC分类号： H01L29/8611 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L31/035236

摘要： A semiconductor device includes: a p-type region including a super-lattice pseudo mixed crystal region in which a first layer and a second layer are alternately stacked. The first layer includes a gallium oxide based semiconductor. The second layer includes a p type semiconductor made of a material different from the first layer.

公开(公告)号：US11982016B2

公开(公告)日：2024-05-14

申请号：US17471395

申请日：2021-09-10

申请人： TAMURA CORPORATION ,  NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY

发明人： Ken Goto ,  Kohei Sasaki ,  Akinori Koukitu ,  Yoshinao Kumagai ,  Hisashi Murakami

IPC分类号： C30B25/16 ,  C23C16/40 ,  C23C16/448 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02 ,  H01L29/04 ,  H01L29/24

CPC分类号： C30B25/165 ,  C23C16/40 ,  C23C16/4488 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/24

摘要： As one embodiment, the present invention provides a method for growing a β-Ga2O3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.

公开(公告)号：US20230352600A1

公开(公告)日：2023-11-02

申请号：US18308948

申请日：2023-04-28

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Marko J. Tadjer ,  Hannah N. Masten ,  Joseph A. Spencer ,  Alan G. Jacobs ,  Karl D. Hobart ,  Yuhao Zhang

IPC分类号： H01L29/872 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/872 ,  H01L29/24 ,  H01L21/02414 ,  H01L21/02565 ,  H01L21/02576 ,  H01L29/66969

摘要： Ga2O3-based rectifier structure and method of forming the same. A Schottky diode structure is combined with a metal-oxide-semiconductor structure to provide a metal oxide-type Schottky barrier diode (MOSSBD) rectifier that includes an n-type β-Ga2O3 drift layer on a β-Ga2O3 substrate, the drift layer having a plurality of spaced-apart semi-insulating regions formed by in-situ ion implantation of acceptor species at predefined spatially defined regions of the drift layer to create alternating areas of n-type and semi-insulating regions within the n-type drift layer. The thus-formed structure achieves high forward bias current with low specific on-resistance when the anode is biased with positive voltage and low leakage current when the device is operated under reverse bias.

公开(公告)号：US11699587B2

公开(公告)日：2023-07-11

申请号：US17297635

申请日：2019-11-27

申请人： KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION

发明人： Ok Hyun Nam ,  Ui Ho Choi ,  Geun Ho Yoo

IPC分类号： H01L21/02

CPC分类号： H01L21/02527 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02425 ,  H01L21/02447 ,  H01L21/02455 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02645

摘要： The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al2O3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.

公开(公告)号：US20180130655A1

公开(公告)日：2018-05-10

申请号：US15793416

申请日：2017-10-25

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Mohit BAJAJ ,  Suresh GUNDAPANENI ,  Aniruddha KONAR ,  Narasimha R. Mavilla ,  Kota V.R.M. MURALI ,  Edward J. NOWAK

IPC分类号： H01L21/02 ,  H01L29/78 ,  H01L29/772 ,  H01L29/66 ,  H01L29/24 ,  H01L29/161 ,  H01L29/08 ,  H01L29/205

CPC分类号： H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

摘要： The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

公开(公告)号：US20180108525A1

公开(公告)日：2018-04-19

申请号：US15784891

申请日：2017-10-16

申请人： Case Western Reserve University

发明人： Hongping ZHAO ,  Subrina RAFIQUE ,  Lu HAN

IPC分类号： H01L21/02 ,  H01L21/443 ,  C30B29/16 ,  C30B25/16

CPC分类号： H01L21/02565 ,  C30B25/02 ,  C30B25/16 ,  C30B29/16 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/443 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/872 ,  H01L31/032 ,  H01L31/047 ,  H01L31/103 ,  H01L31/18

摘要： A method is disclosed for depositing a high-quality thin films of ultrawide bandgap oxide semiconductors at growth rates that are higher than possible using prior-art methods. Embodiments of the present invention employ LPCVD deposition using vapor formed by evaporating material as a precursor, where the material has a low vapor pressure at the growth temperature for the thin film. The vapor is carried to a reaction chamber by an inert gas, such as argon, where it mixes with a second precursor. The reaction chamber is held at a pressure that nucleation of the precursor materials occurs preferentially on the substrate surface rather than in vapor phase. The low vapor pressure of the material gives rise to growth rates on the substrate surface that a significantly faster than achievable using prior-art growth methods.

公开(公告)号：US20170213918A1

公开(公告)日：2017-07-27

申请号：US15328791

申请日：2015-07-24

申请人： TAMURA CORPORATION ,  National Institute of Information and Communications Technology

发明人： Kohei SASAKI ,  Akito KURAMATA ,  Masataka HIGASHIWAKI

IPC分类号： H01L29/872 ,  C30B15/34 ,  C30B23/02 ,  C30B23/06 ,  H01L21/425 ,  C30B33/08 ,  C30B31/22 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  C30B29/16 ,  C30B25/18

CPC分类号： H01L29/872 ,  C30B15/34 ,  C30B23/025 ,  C30B23/066 ,  C30B25/186 ,  C30B29/16 ,  C30B31/22 ,  C30B33/08 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/425 ,  H01L29/12 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/808 ,  H01L29/812

摘要： A semiconductor element includes a base substrate that includes a Ga2O3-based crystal having a thickness of not less than 0.05 μm and not more than 50 μm, and an epitaxial layer that includes a Ga2O3-based crystal and is epitaxially grown on the base substrate. A semiconductor element includes an epitaxial layer that includes a Ga2O3-based crystal including an n-type dopant, an ion implanted layer that is formed on a surface of the epitaxial layer and includes a higher concentration of n-type dopant than the epitaxial layer, an anode electrode connected to the epitaxial layer, and a cathode electrode connected to the ion implanted layer.

公开(公告)号：US20170179249A1

公开(公告)日：2017-06-22

申请号：US15381894

申请日：2016-12-16

申请人： FLOSFIA INC.

发明人： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC分类号： H01L29/47 ,  H01L29/41

CPC分类号： H01L29/47 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02628 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41 ,  H01L29/43 ,  H01L29/66969 ,  H01L29/872

摘要： A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US20170062594A1

公开(公告)日：2017-03-02

申请号：US15084144

申请日：2016-03-29

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Mohit BAJAJ ,  Suresh GUNDAPANENI ,  Aniruddha KONAR ,  Narasimha R. Mavilla ,  Kota V.R.M. MURALI ,  Edward J. NOWAK

IPC分类号： H01L29/66

CPC分类号： H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

摘要： The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.

摘要翻译： 本公开涉及半导体结构，更具体地，涉及对称隧道场效应晶体管及其制造方法。 该结构包括包括源极区和漏极区的栅结构，二者都包括掺杂的VO2区。

公开(公告)号：US20170062234A1

公开(公告)日：2017-03-02

申请号：US15084137

申请日：2016-03-29

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Mohit BAJAJ ,  Suresh GUNDAPANENI ,  Aniruddha KONAR ,  Narasimha R. Mavilla ,  Kota V.R.M. MURALI ,  Edward J. NOWAK

IPC分类号： H01L21/3115 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/41725 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/3115 ,  H01L21/8232 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/205 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/66977 ,  H01L29/7391 ,  H01L29/772 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78693

摘要： The present disclosure relates to semiconductor structures and, more particularly, to a symmetric tunnel field effect transistor and methods of manufacture. The structure includes a gate structure including a source region and a drain region both of which comprise a doped VO2 region.