公开(公告)号：US09093190B2

公开(公告)日：2015-07-28

申请号：US13321835

申请日：2010-05-26

申请人： Rakesh Agrawal ,  Hugh W. Hillhouse ,  Qijie Guo

发明人： Rakesh Agrawal ,  Hugh W. Hillhouse ,  Qijie Guo

IPC分类号： H01B1/10 ,  H01L31/00 ,  C01B19/00 ,  C23C18/12 ,  H01L21/02 ,  H01L31/032

CPC分类号： H01B1/10 ,  C01B19/002 ,  C23C18/127 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0324 ,  Y02E10/541

摘要： Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.

摘要翻译： 描述了纳米颗粒组合物和合成多元硫属化物CZTSSe纳米颗粒的方法，所述CZTSSe纳米颗粒含有Cu，Zn和Sn与S，Se或两者的组合。 纳米颗粒可以单独地或与其它基于硫族化物的颗粒组合在一个或多个油墨溶液中以制备用于光伏应用的薄膜，包括具有组成轮廓的多层颗粒膜的薄膜。 薄膜的组成和化学计量可以通过使颗粒膜经历气相或液相硫属元素交换反应进一步改变。

公开(公告)号：US20120138866A1

公开(公告)日：2012-06-07

申请号：US13321835

申请日：2010-05-26

申请人： Rakesh Agrawal ,  Hugh W. Hillhouse ,  Qijie Guo

发明人： Rakesh Agrawal ,  Hugh W. Hillhouse ,  Qijie Guo

IPC分类号： H01L31/0328 ,  C01G19/00 ,  C01B19/00 ,  B82Y30/00

CPC分类号： H01B1/10 ,  C01B19/002 ,  C23C18/127 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0324 ,  Y02E10/541

摘要： Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.

摘要翻译： 描述了纳米颗粒组合物和合成多元硫属化物CZTSSe纳米颗粒的方法，所述CZTSSe纳米颗粒含有Cu，Zn和Sn与S，Se或两者的组合。 纳米颗粒可以单独地或与其它基于硫族化物的颗粒组合在一个或多个油墨溶液中以制备用于光伏应用的薄膜，包括具有组成轮廓的多层颗粒膜的薄膜。 薄膜的组成和化学计量可以通过使颗粒膜经历气相或液相硫属元素交换反应进一步改变。

公开(公告)号：US20120115312A1

公开(公告)日：2012-05-10

申请号：US13321834

申请日：2010-05-26

申请人： Rakesh Agrawal ,  Hugh W. Hillhouse ,  Qijie Guo ,  Mahaprasad Kar

发明人： Rakesh Agrawal ,  Hugh W. Hillhouse ,  Qijie Guo ,  Mahaprasad Kar

IPC分类号： H01L21/20

CPC分类号： H01L31/0322 ,  B82Y30/00 ,  C09D11/36 ,  H01L21/02485 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0749 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

摘要： In one aspect, a method for forming CIGSSe-based thin films includes depositing at least two layers of particles on a substrate. At least one layer includes a CIGSSe particle having a chemical composition denoted by Cu(InI-xGax)(S1-ySey)2 where 0≦x ≦1 and 0≦y≦1. The particle layers are annealed individually or in combination to form a CIGSSe thin film having a composition profile along the depth of the film In addition, one or more of the particle layers may be also deposited on a pre-existing absorber and annealed to form a film having a composition profile along the depth of the film After depositing thin film precursor layers containing CIGSSe nanoparticles (and/or any other particles) on a suitable substrate in accordance with a desired concentration profile, a subsequent treatment under an Se and/or S containing atmosphere at elevated temperature may be used to convert the precursor layers into a CIGSSe absorber film In a further aspect, a method for forming multinary metal chalcogenide semiconductor layers directly on a substrate from a solution of precursors, includes depositing a plurality of metal chalcogenide particles onto a substrate to form a precursor film A species containing a metal, chalcogen, or combination thereof is dissolved in a solution containing one or more solvents to form a liquid chalcogen medium. The precursor film is contacted with the liquid chalcogen medium at a temperature of at least 50 C to form a multinary metal chalcogenide thin film

摘要翻译： 一方面，用于形成CIGSSe的薄膜的方法包括在衬底上沉积至少两层颗粒。 至少一层包括具有由Cu（InI-xGax）（S1-ySey）2表示的化学组成的CIGSSe颗粒，其中0和nlE; x和nlE; 1和0＆amp; nlE; y＆nlE; 1。 颗粒层单独地或组合地退火以形成具有沿着膜的深度的组成分布的CIGSSe薄膜。此外，一个或多个颗粒层也可以沉积在预先存在的吸收体上并退火以形成 具有沿着膜深度的组成轮廓的膜根据期望的浓度分布，在合适的底物上沉积含有CIGSSe纳米颗粒（和/或任何其它颗粒）的薄膜前体层，然后在Se和/或S 可以使用高温下的含氮气氛将前体层转化为CIGSSe吸收膜。在另一方面，从前体溶液直接在基底上形成多金属硫族化物半导体层的方法包括沉积多个金属硫族化物颗粒 在基材上形成前体膜A含有金属，硫族元素或其组合的物质是溶解的 在含有一种或多种溶剂以形成液体硫属培养基的溶液中。 前体膜与液态硫属培养基在至少50℃的温度下接触以形成多元金属硫族化物薄膜

公开(公告)号：US07829059B2

公开(公告)日：2010-11-09

申请号：US12301317

申请日：2007-05-21

申请人： Qijie Guo ,  Rakesh Agrawal ,  Hugh W. Hillhouse

发明人： Qijie Guo ,  Rakesh Agrawal ,  Hugh W. Hillhouse

IPC分类号： C01B17/00 ,  C01B19/00

CPC分类号： C01G1/02 ,  B82Y30/00 ,  C01B19/002 ,  C01B19/007 ,  C01G1/12 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/24 ,  C01P2004/64 ,  Y10S977/773 ,  Y10S977/774

摘要： A method for synthesizing a chalcogenide nanoparticle is provided. The method comprises reacting a metal component with an elemental chalcogen precursor in the presence of an organic solvent. The chalcogenide nanoparticles include ternary, binary and/or multinary chalcogenide nanoparticles and the metal component comprises metal halides or elemental metal precursors. The alkylamine solvent has a normal boiling temperature of above about 220° C. and an average particle size of from about 5 nm to about 1000 nm.

摘要翻译： 提供了一种合成硫族化物纳米颗粒的方法。 该方法包括在有机溶剂存在下使金属组分与元素硫族前体反应。 硫族化物纳米颗粒包括三元，二元和/或多元硫族化物纳米颗粒，金属组分包括金属卤化物或元素金属前体。 烷基胺溶剂的正常沸腾温度高于约220℃，平均粒度为约5nm至约1000nm。

公开(公告)号：US08080483B2

公开(公告)日：2011-12-20

申请号：US11933494

申请日：2007-11-01

申请人： Hugh W. Hillhouse ,  Vikrant N. Urade ,  Ta-Chen Wei ,  Michael P. Tate

发明人： Hugh W. Hillhouse ,  Vikrant N. Urade ,  Ta-Chen Wei ,  Michael P. Tate

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： B81B7/0006 ,  B81B2201/0214 ,  G01N27/4075 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02628 ,  H01L21/02639 ,  Y10T428/12007 ,  Y10T428/24496 ,  Y10T428/249979

摘要： A method of forming a nanoporous film is disclosed. The method comprises forming a coating solution including clusters, surfactant molecules, a solvent, and one of an acid catalyst and a base catalyst. The clusters comprise inorganic groups. The method further comprises aging the coating solution for a time period to select a predetermined phase that will self-assemble and applying the coating solution on a substrate. The method further comprises evaporating the solvent from the coating solution and removing the surfactant molecules to yield the nanoporous film.

摘要翻译： 公开了一种形成纳米多孔膜的方法。 该方法包括形成包括簇，表面活性剂分子，溶剂以及酸催化剂和碱催化剂之一的涂布溶液。 簇包含无机基团。 该方法还包括使涂布溶液老化一段时间，以选择将自组装并将涂布溶液涂布在基材上的预定相。 该方法还包括从涂布溶液中蒸发溶剂并除去表面活性剂分子以产生纳米多孔膜。