公开(公告)号：US20240170398A1

公开(公告)日：2024-05-23

申请号：US18511535

申请日：2023-11-16

Applicant: Renesas Electronics Corporation

Inventor： Hiromichi TAKAOKA ,  Yoshiyuki SATO ,  Yuki FUJIMOTO

IPC: H01L23/525

CPC classification number: H01L23/5256

Abstract: The dielectric film IF is disposed on the semiconductor substrate SB, and the plurality of electric fuse portions FU are disposed on the dielectric film IF. The n-type first well region WL1 is disposed in the semiconductor substrate SB and on the surface of the semiconductor substrate SB. The first well region WL1 is formed by integrally connecting the well region WLa located under each of the plurality of electric fuse portions FU to each other.

公开(公告)号：US20170092649A1

公开(公告)日：2017-03-30

申请号：US15270132

申请日：2016-09-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hiromichi TAKAOKA

IPC: H01L27/11 ,  H01L23/535 ,  H01L21/311 ,  H01L49/02

CPC classification number: H01L27/1104 ,  H01L21/31116 ,  H01L23/535 ,  H01L27/11582 ,  H01L28/00 ,  H01L28/60

Abstract: To improve reliability of SRAM. In a memory cell of the SRAM, a coupling capacitance is provided between memory nodes in consideration of dynamic stability.

公开(公告)号：US20230067226A1

公开(公告)日：2023-03-02

申请号：US17847952

申请日：2022-06-23

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Naohito SUZUMURA ,  Hiromichi TAKAOKA ,  Kenichiro SONODA ,  Hideaki TSUCHIYA ,  Yasutaka NAKASHIBA

IPC: H01L23/525 ,  H01L23/522 ,  H01L27/01 ,  H01C7/00

Abstract: An electric fuse element has a first portion, a second portion arranged on one end of the first portion, and a third portion arranged on the other end of the first portion. A resistor element is arranged separately from the electric fuse element. A material of each of the electric fuse element and the resistor element has silicon metal or nickel chromium. The electric fuse element and the resistor element are arranged in an upper layer of the first wiring and in lower layer of the second wiring. A wiring width of the second portion and a wiring width of the third portion are larger than a wiring width of the first portion.

公开(公告)号：US20180005704A1

公开(公告)日：2018-01-04

申请号：US15631263

申请日：2017-06-23

Applicant: Renesas Electronics Corporation

Inventor： Hiromichi TAKAOKA

IPC: G11C17/16 ,  H01L27/112 ,  H01L23/528 ,  H01L23/525 ,  H01L29/06 ,  G11C17/18

CPC classification number: G11C17/165 ,  G11C17/16 ,  G11C17/18 ,  H01L23/5252 ,  H01L23/528 ,  H01L27/11206 ,  H01L29/0649 ,  H01L29/0684

Abstract: There is to provide a semiconductor device capable of improving the reliability. The semiconductor device is provided with an anti-fuse element including a semiconductor substrate, a well region of a first conductivity type formed in the semiconductor substrate, and a gate electrode formed over the semiconductor substrate through a gate insulating film, and source regions of a second conductivity type opposite to the first conductivity type formed within the well region at the both ends of the gate electrode. When writing in the fuse element, a first writing potential is applied to the gate electrode, a first reference potential is applied to the well region, an intermediate potential is supplied to the source regions, and the intermediate potential is lower than the first writing potential and higher than the first reference potential.