公开(公告)号：US20150084104A1

公开(公告)日：2015-03-26

申请号：US14474999

申请日：2014-09-02

Applicant: Renesas Electronics Corporation

Inventor： Yuji ANDO

IPC: H01L29/20 ,  H01L21/28 ,  H01L29/40 ,  H01L21/02 ,  H01L29/772 ,  H01L29/66

CPC classification number: H01L29/2003 ,  H01L21/28264 ,  H01L21/6835 ,  H01L29/045 ,  H01L29/0646 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7788 ,  H01L2221/6835 ,  H01L2221/68363

Abstract: Characteristics of a high electron mobility transistor are improved. A stack having an n-type contact layer (n-type AlGaN layer), an electron supply layer (undoped AlGaN layer), and a channel layer (undoped GaN layer) is formed in a growth mode over a Ga plane parallel with a [0001] crystal axis direction. Then, after turning the stack upside down so that the n-type contact layer (n-type AlGaN layer) is situated to the upper surface and forming a trench, a gate electrode is formed by way of a gate insulation film. By stacking the channel layer (undoped GaN layer) and the electron supply layer (undoped AlGaN layer) successively in a [000-1] direction, (1) normally off operation and (2) increase of withstanding voltage can easily be compatible with each other.

Abstract translation: 提高了高电子迁移率晶体管的特性。 在平行于[...]的Ga平面上的生长模式中形成具有n型接触层（n型AlGaN层），电子供给层（未掺杂的AlGaN层）和沟道层（未掺杂的GaN层）的堆叠， 0001]晶轴方向。 然后，在将叠层翻转后，使n型接触层（n型AlGaN层）位于上表面并形成沟槽，通过栅极绝缘膜形成栅电极。 通过在[000-1]方向上连续地堆叠沟道层（未掺杂的GaN层）和电子供给层（未掺杂的AlGaN层），（1）常关断操作和（2）耐受电压的增加可以容易地与每个 其他。

公开(公告)号：US20130292690A1

公开(公告)日：2013-11-07

申请号：US13872914

申请日：2013-04-29

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuji ANDO ,  Kazuki OTA

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7786

Abstract: In a high electron mobility transistor, with a normally-off operation maintained, on-resistance can be sufficiently reduced, so that the performance of a semiconductor device including the high electron mobility transistor is improved. Between a channel layer and an electron supply layer, a spacer layer whose band gap is larger than the band gap of the electron supply layer is provided. Thereby, due to the fact that the band gap of the spacer layer is large, a high potential barrier (electron barrier) is formed in the vicinity of an interface between the channel and the electron supply layer.

Abstract translation: 在高电子迁移率晶体管中，保持常关断操作，可以充分降低导通电阻，从而提高包括高电子迁移率晶体管的半导体器件的性能。 在沟道层和电子供给层之间设置带隙大于电子供给层的带隙的间隔层。 因此，由于间隔层的带隙大，所以在沟道与电子供给层的界面附近形成高电位势垒（电子势垒）。

公开(公告)号：US20160079409A1

公开(公告)日：2016-03-17

申请号：US14947172

申请日：2015-11-20

Applicant: Renesas Electronics Corporation

Inventor： Yasuhiro OKAMOTO ,  Yuji ANDO ,  Tatsuo NAKAYAMA ,  Takashi INOUE ,  Kazuki OTA

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/423 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

Abstract: A semiconductor device including a field effect transistor including a substrate, a lower barrier layer provided on the substrate, a channel layer provided on the lower barrier layer, an electron supplying layer provided on the channel layer, a source electrode and a drain electrode provided on the electron layer, and a gate electrode provided between the source electrode and the drain electrode. The lower barrier layer includes a composition of In1-zAlzN (0≦z≦1). The channel layer includes a composition of AlxGa1-xN (0≦x≦1). A recess is provided in a region between the source electrode and the drain electrode, wherein the recess goes through the electron supplying layer to a depth that exposes the channel layer, and the gate electrode is disposed on a gate insulating film that covers a bottom surface and an inner wall surface of the recess.

Abstract translation: 一种包括场效应晶体管的半导体器件，包括衬底，设置在衬底上的下阻挡层，设置在下阻挡层上的沟道层，设置在沟道层上的电子供给层，设置在沟道层上的源电极和漏电极 电子层和设置在源电极和漏电极之间的栅电极。 下阻挡层包括In1-zAlzN（0＆nlE; z＆nlE; 1）的组合物。 沟道层包括Al x Ga 1-x N（0＆amp; nlE; x＆nlE; 1）的组成。 在源电极和漏电极之间的区域设置有凹部，其中，凹部穿过电子供给层到达暴露沟道层的深度，并且栅电极设置在覆盖底面的栅极绝缘膜上 和凹部的内壁表面。

公开(公告)号：US20140209922A1

公开(公告)日：2014-07-31

申请号：US14153203

申请日：2014-01-13

Applicant: Renesas Electronics Corporation

Inventor： Kazuki OTA ,  Yuji ANDO

IPC: H01L29/778

CPC classification number: H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7787

Abstract: A high electron mobility transistor having a channel layer, electron supply layer, source electrode, and drain electrode is included so as to have a cap layer formed on the electron supply layer between the source and drain electrodes and having an inclined side surface, an insulating film having an opening portion on the upper surface of the cap layer and covering the side surface thereof, and a gate electrode is formed in the opening portion and extending, via the insulating film, over the side surface of the cap layer on the drain electrode side. The gate electrode having an overhang on the drain electrode side can reduce the peak electric field.

Abstract translation: 包括具有沟道层，电子供给层，源电极和漏电极的高电子迁移率晶体管，以具有形成在源极和漏极之间的电子供应层上并具有倾斜侧表面的绝缘层 该膜在盖层的上表面上具有开口部分并覆盖其侧表面，并且在该开口部分中形成栅电极，并且经由绝缘膜延伸到漏电极上的盖层的侧表面上 侧。 在漏电极侧具有突出端的栅电极可以减小峰值电场。

公开(公告)号：US20150076511A1

公开(公告)日：2015-03-19

申请号：US14550118

申请日：2014-11-21

Applicant: Renesas Electronics Corporation

Inventor： Yasuhiro OKAMOTO ,  Yuji ANDO ,  Tatsuo NAKAYAMA ,  Takashi INOUE ,  Kazuki OTA

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/205 ,  H01L29/20 ,  H01L29/201

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

Abstract: A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In1−zAlzN (0≦z≦1), a channel layer having a composition of: AlxGa1−xN (0≦x≦1) or InyGa1−yN (0≦y≦1). Or GaN provided on and lattice-matched to the lower barrier layer, a source electrode and a drain electrode having ohmic contact to an upper part of the semiconductor layers, disposed spaced to each other, and a gate electrode arranged via a gate insulating film in a region lying between the source electrode and the drain electrode.

Abstract translation: 场效应晶体管包括衬底和设置在衬底上的半导体层，其中半导体层包括设置在衬底上的下阻挡层，生长Ga面，晶格弛豫并具有组成In 1-z Al z N（0＆nl; z＆nl E; 1），具有以下组成的沟道层：Al x Ga 1-x N（0＆amp; nlE; x＆nlE; 1）或In y Ga 1-y N（0＆nlE; y＆nlE; 1）。 或提供在栅极绝缘膜上并与栅极绝缘膜配置的栅电极，栅极配置在栅极绝缘膜上，栅电极配置在栅极绝缘膜上， 位于源电极和漏电极之间的区域。