Light emitting element
    1.
    发明授权
    Light emitting element 有权
    发光元件

    公开(公告)号:US08178896B2

    公开(公告)日:2012-05-15

    申请号:US12920573

    申请日:2009-02-24

    IPC分类号: H01L33/32

    摘要: A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes.

    摘要翻译: 发光器件包括彼此面对的一对电极和夹在一对电极之间并且包括放置在其中的荧光体颗粒的荧光体层。 荧光体颗粒包括n型氮化物半导体部件和p型氮化物半导体部件,n型氮化物半导体部件和p型氮化物半导体部件由具有c轴的纤锌矿型晶体结构的各自的单晶制成 彼此平行,并且荧光体颗粒包括设置成覆盖垂直于c轴的端表面之外的一个端面的绝缘层。

    LIGHT EMITTING DEVICE
    2.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20110156080A1

    公开(公告)日:2011-06-30

    申请号:US13061052

    申请日:2009-02-24

    IPC分类号: H01L33/58

    CPC分类号: H01L33/18 H01L33/24

    摘要: A light emitting device is provided with: a pair of an anode and a cathode that are opposed to each other; and a phosphor layer, composed of a plurality of phosphor particles, that is sandwiched between the paired anode and cathode, from direction that is perpendicular to main surfaces of the anode and the cathode, and in this structure, each phosphor particle is a nitride semiconductor phosphor particle having a wurtzite crystal structure that contains an n-type nitride semiconductor portion and a p-type nitride semiconductor portion, with the n-type nitride semiconductor portion being made in contact with the cathode and the p-type nitride semiconductor portion being made in contact with the anode, and the n-type nitride semiconductor portion and the p-type nitride semiconductor portion have the common c-axe in the respective crystal structures thereof made in parallel with each other, with the n-type nitride semiconductor portion and the p-type nitride semiconductor portion being made in contact with each other on a plane in parallel with the c-axe.

    摘要翻译: 发光器件设置有:一对彼此相对的阳极和阴极; 以及由垂直于阳极和阴极的主表面的方向夹在一对阳极和阴极之间的由多个荧光体颗粒组成的荧光体层,并且在该结构中,每个荧光体颗粒是氮化物半导体 具有含有n型氮化物半导体部分和p型氮化物半导体部分的纤锌矿型晶体结构的荧光体颗粒,其中使n型氮化物半导体部分与阴极接触并且p型氮化物半导体部分被制成 与n型氮化物半导体部分和n型氮化物半导体部分和n型氮化物半导体部分和/或p型氮化物半导体部分在其各自的晶体结构中具有共同的c-ax, p型氮化物半导体部分在与c-ax平行的平面上彼此接触。

    LIGHT EMITTING ELEMENT AND DISPLAY DEVICE
    4.
    发明申请
    LIGHT EMITTING ELEMENT AND DISPLAY DEVICE 审中-公开
    发光元件和显示器件

    公开(公告)号:US20110175098A1

    公开(公告)日:2011-07-21

    申请号:US13120820

    申请日:2009-04-30

    IPC分类号: H01L33/08 H01L33/50 H01L33/16

    摘要: A light emitting element includes: a first electrode and a second electrode provided as being opposed each other, at least one of the first electrode and the second electrode being transparent or translucent; and a phosphor layer sandwiched between the first electrode and the second electrode, from a direction that is perpendicular to main surfaces of the first and second electrodes. In this structure, the phosphor layer includes: a plurality of phosphor particles that are disposed within a plane of the phosphor layer; and a first and second insulating guides that sandwich two sides of each of the phosphor particles from a direction that is in parallel with the surface of the phosphor layer.

    摘要翻译: 发光元件包括:第一电极和设置为彼此相对的第二电极,第一电极和第二电极中的至少一个是透明或半透明的; 以及从垂直于第一和第二电极的主表面的方向夹在第一电极和第二电极之间的磷光体层。 在该结构中,荧光体层包括:配置在荧光体层的平面内的多个荧光体粒子; 以及从与荧光体层的表面平行的方向夹着每个荧光体粒子的两侧的第一和第二绝缘引导件。

    LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME
    5.
    发明申请
    LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME 有权
    发光装置和使用该发光装置的显示装置

    公开(公告)号:US20100283066A1

    公开(公告)日:2010-11-11

    申请号:US12746446

    申请日:2008-12-04

    IPC分类号: H01L33/44 H01L33/08

    CPC分类号: H05B33/145 H05B33/20

    摘要: A light emitting device (10) of the present invention includes luminescent particles (14) and a pair of electrodes (12, 16) for injecting an electric current into the luminescent particles (14). An inorganic hole transport material (15) is disposed between the electrodes (12, 16). The luminescent particles (14) are dispersed in the inorganic hole transport material (15). Conductive fine particles may be adhered to at least a part of the surfaces of the luminescent particles (14) for the purpose of achieving further high brightness and high efficiency.

    摘要翻译: 本发明的发光器件(10)包括用于将电流注入发光粒子(14)的发光粒子(14)和一对电极(12,16)。 无机空穴传输材料(15)设置在电极(12,16)之间。 发光粒子(14)分散在无机空穴传输材料(15)中。 为了实现更高的亮度和高效率的目的,导电性微粒可附着于发光粒子(14)的至少一部分表面。

    Light emitting device having inorganic luminescent particles in inorganic hole transport material
    6.
    发明授权
    Light emitting device having inorganic luminescent particles in inorganic hole transport material 有权
    在无机空穴传输材料中具有无机发光颗粒的发光器件

    公开(公告)号:US08304979B2

    公开(公告)日:2012-11-06

    申请号:US12746446

    申请日:2008-12-04

    IPC分类号: H05B33/02

    CPC分类号: H05B33/145 H05B33/20

    摘要: A light emitting device (10) of the present invention includes luminescent particles (14) and a pair of electrodes (12, 16) for injecting an electric current into the luminescent particles (14). An inorganic hole transport material (15) is disposed between the electrodes (12, 16). The luminescent particles (14) are dispersed in the inorganic hole transport material (15). Conductive fine particles may be adhered to at least a part of the surfaces of the luminescent particles (14) for the purpose of achieving further high brightness and high efficiency.

    摘要翻译: 本发明的发光器件(10)包括用于将电流注入发光粒子(14)的发光粒子(14)和一对电极(12,16)。 无机空穴传输材料(15)设置在电极(12,16)之间。 发光粒子(14)分散在无机空穴传输材料(15)中。 为了实现更高的亮度和高效率的目的,导电性微粒可附着于发光粒子(14)的至少一部分表面。

    LIGHT EMITTING ELEMENT
    7.
    发明申请
    LIGHT EMITTING ELEMENT 有权
    发光元件

    公开(公告)号:US20110012167A1

    公开(公告)日:2011-01-20

    申请号:US12920573

    申请日:2009-02-24

    IPC分类号: H01L33/32

    摘要: A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes.

    摘要翻译: 发光器件包括彼此面对的一对电极和夹在一对电极之间并且包括放置在其中的荧光体颗粒的荧光体层。 荧光体颗粒包括n型氮化物半导体部件和p型氮化物半导体部件,n型氮化物半导体部件和p型氮化物半导体部件由具有c轴的纤锌矿型晶体结构的各自的单晶制成 彼此平行,并且荧光体颗粒包括设置成覆盖垂直于c轴的端表面之外的一个端面的绝缘层。

    LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME
    8.
    发明申请
    LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME 审中-公开
    发光装置和使用该发光装置的显示装置

    公开(公告)号:US20100314639A1

    公开(公告)日:2010-12-16

    申请号:US12918733

    申请日:2009-02-19

    摘要: The light emitting device (10) of the present invention is provided with a light emitting layer (13), and a pair of electrodes (12 and 14) for injecting electric current into the light emitting layer (13). The light emitting layer (13) includes GaN-based semiconductor particles (21). The light emitting device (10) of the present invention is provided further with a light absorber for absorbing at least part of the light with a wavelength of 470 nm to 800 nm. The light absorber is, for example, a light absorption film (19) provided on at least a part of the surface of each of the GaN-based semiconductor particles (18). Further, the light absorber may be light absorption particles dispersed in the light emitting layer, or may be a light absorption layer disposed on the light exit side with respect to the light emitting layer.

    摘要翻译: 本发明的发光器件(10)具有发光层(13)和用于将电流注入到发光层(13)中的一对电极(12和14)。 发光层(13)包括GaN基半导体颗粒(21)。 本发明的发光器件(10)还具有用于吸收波长为470nm至800nm的至少一部分光的光吸收体。 光吸收体例如是设置在各GaN基半导体粒子(18)的表面的至少一部分上的光吸收膜(19)。 此外,光吸收剂可以是分散在发光层中的光吸收颗粒,或者可以是相对于发光层设置在光出射侧的光吸收层。

    Light emitting device
    9.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US08450766B2

    公开(公告)日:2013-05-28

    申请号:US12922726

    申请日:2009-03-16

    IPC分类号: H01L33/00

    摘要: A light emitting device (10) of the present invention includes: a back electrode (2) as a first electrode and a transparent electrode (3) as a second electrode facing each other, at least one of the back electrode and the transparent electrode having transparency to light; and luminescent particles (4) provided between the back electrode (2) and the transparent electrode (3) and connected electrically to the back electrode (2) and the transparent electrode (3). The back electrode (2) as the first electrode has recesses in a surface thereof facing the transparent electrode (3).

    摘要翻译: 本发明的发光器件(10)包括:作为第一电极的背面电极(2)和作为彼此面对的第二电极的透明电极(3),背电极和透明电极中的至少一个具有 光透明度 以及设置在背面电极(2)和透明电极(3)之间并与背面电极(2)和透明电极(3)电连接的发光粒子(4)。 作为第一电极的背面电极(2)在面向透明电极(3)的表面具有凹部。

    Light emitting device
    10.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US08309985B2

    公开(公告)日:2012-11-13

    申请号:US13061052

    申请日:2009-02-24

    IPC分类号: H01L33/32

    CPC分类号: H01L33/18 H01L33/24

    摘要: A light emitting device is provided with: a pair of an anode and a cathode that are opposed to each other; and a phosphor layer, composed of a plurality of phosphor particles, that is sandwiched between the paired anode and cathode, from direction that is perpendicular to main surfaces of the anode and the cathode, and in this structure, each phosphor particle is a nitride semiconductor phosphor particle having a wurtzite crystal structure that contains an n-type nitride semiconductor portion and a p-type nitride semiconductor portion, with the n-type nitride semiconductor portion being made in contact with the cathode and the p-type nitride semiconductor portion being made in contact with the anode, and the n-type nitride semiconductor portion and the p-type nitride semiconductor portion have the common c-axe in the respective crystal structures thereof made in parallel with each other, with the n-type nitride semiconductor portion and the p-type nitride semiconductor portion being made in contact with each other on a plane in parallel with the c-axe.

    摘要翻译: 发光器件设置有:一对彼此相对的阳极和阴极; 以及由垂直于阳极和阴极的主表面的方向夹在一对阳极和阴极之间的由多个荧光体颗粒组成的荧光体层,并且在该结构中,每个荧光体颗粒是氮化物半导体 具有含有n型氮化物半导体部分和p型氮化物半导体部分的纤锌矿型晶体结构的荧光体颗粒,其中使n型氮化物半导体部分与阴极接触并且p型氮化物半导体部分被制成 与n型氮化物半导体部分和n型氮化物半导体部分和n型氮化物半导体部分和/或p型氮化物半导体部分在其各自的晶体结构中具有共同的c-ax, p型氮化物半导体部分在与c-ax平行的平面上彼此接触。