摘要:
A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes.
摘要:
A light emitting device is provided with: a pair of an anode and a cathode that are opposed to each other; and a phosphor layer, composed of a plurality of phosphor particles, that is sandwiched between the paired anode and cathode, from direction that is perpendicular to main surfaces of the anode and the cathode, and in this structure, each phosphor particle is a nitride semiconductor phosphor particle having a wurtzite crystal structure that contains an n-type nitride semiconductor portion and a p-type nitride semiconductor portion, with the n-type nitride semiconductor portion being made in contact with the cathode and the p-type nitride semiconductor portion being made in contact with the anode, and the n-type nitride semiconductor portion and the p-type nitride semiconductor portion have the common c-axe in the respective crystal structures thereof made in parallel with each other, with the n-type nitride semiconductor portion and the p-type nitride semiconductor portion being made in contact with each other on a plane in parallel with the c-axe.
摘要:
A phosphor element is provided with a first electrode and a second electrode. The electrodes are arranged to face each other, and at least one of the electrodes is transparent or semi-transparent. The phosphor element is also provided with a phosphor layer, which is sandwiched between the first electrode and the second electrode and has phosphor particles dispersed in a medium made of a hole transport material. Conductive nano particles are held on the surface of each of the phosphor particles.
摘要:
A light emitting element includes: a first electrode and a second electrode provided as being opposed each other, at least one of the first electrode and the second electrode being transparent or translucent; and a phosphor layer sandwiched between the first electrode and the second electrode, from a direction that is perpendicular to main surfaces of the first and second electrodes. In this structure, the phosphor layer includes: a plurality of phosphor particles that are disposed within a plane of the phosphor layer; and a first and second insulating guides that sandwich two sides of each of the phosphor particles from a direction that is in parallel with the surface of the phosphor layer.
摘要:
A light emitting device (10) of the present invention includes luminescent particles (14) and a pair of electrodes (12, 16) for injecting an electric current into the luminescent particles (14). An inorganic hole transport material (15) is disposed between the electrodes (12, 16). The luminescent particles (14) are dispersed in the inorganic hole transport material (15). Conductive fine particles may be adhered to at least a part of the surfaces of the luminescent particles (14) for the purpose of achieving further high brightness and high efficiency.
摘要:
A light emitting device (10) of the present invention includes luminescent particles (14) and a pair of electrodes (12, 16) for injecting an electric current into the luminescent particles (14). An inorganic hole transport material (15) is disposed between the electrodes (12, 16). The luminescent particles (14) are dispersed in the inorganic hole transport material (15). Conductive fine particles may be adhered to at least a part of the surfaces of the luminescent particles (14) for the purpose of achieving further high brightness and high efficiency.
摘要:
A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes.
摘要:
The light emitting device (10) of the present invention is provided with a light emitting layer (13), and a pair of electrodes (12 and 14) for injecting electric current into the light emitting layer (13). The light emitting layer (13) includes GaN-based semiconductor particles (21). The light emitting device (10) of the present invention is provided further with a light absorber for absorbing at least part of the light with a wavelength of 470 nm to 800 nm. The light absorber is, for example, a light absorption film (19) provided on at least a part of the surface of each of the GaN-based semiconductor particles (18). Further, the light absorber may be light absorption particles dispersed in the light emitting layer, or may be a light absorption layer disposed on the light exit side with respect to the light emitting layer.
摘要:
A light emitting device (10) of the present invention includes: a back electrode (2) as a first electrode and a transparent electrode (3) as a second electrode facing each other, at least one of the back electrode and the transparent electrode having transparency to light; and luminescent particles (4) provided between the back electrode (2) and the transparent electrode (3) and connected electrically to the back electrode (2) and the transparent electrode (3). The back electrode (2) as the first electrode has recesses in a surface thereof facing the transparent electrode (3).
摘要:
A light emitting device is provided with: a pair of an anode and a cathode that are opposed to each other; and a phosphor layer, composed of a plurality of phosphor particles, that is sandwiched between the paired anode and cathode, from direction that is perpendicular to main surfaces of the anode and the cathode, and in this structure, each phosphor particle is a nitride semiconductor phosphor particle having a wurtzite crystal structure that contains an n-type nitride semiconductor portion and a p-type nitride semiconductor portion, with the n-type nitride semiconductor portion being made in contact with the cathode and the p-type nitride semiconductor portion being made in contact with the anode, and the n-type nitride semiconductor portion and the p-type nitride semiconductor portion have the common c-axe in the respective crystal structures thereof made in parallel with each other, with the n-type nitride semiconductor portion and the p-type nitride semiconductor portion being made in contact with each other on a plane in parallel with the c-axe.