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1.发明申请Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers 失效用于生产高掺杂半导体晶片的方法和无位错高掺杂半导体晶片公开(公告)号：US20050167001A1
公开(公告)日：2005-08-04
申请号：US11043574
申请日：2005-01-26
IPC分类号： H01L21/24 , C30B15/04 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/52 , H01L21/02 , H01L29/167 , C30B15/00 , H01L21/26 , H01L29/00
CPC分类号： C30B29/52 , C30B15/04 , C30B29/06 , C30B29/08 , H01L29/167 , Y10S438/914 , Y10T428/21
摘要： The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to a semiconductor wafer which is free of dislocations and is doped with at least two electrically active dopants which belong to the same group of the periodic system of the elements.
摘要翻译： 本发明涉及用于制造高掺杂半导体晶片的方法，其中使用至少两种具有电活性且属于元素周期系统的同一组的掺杂剂用于掺杂。 本发明还涉及一种不含位错的半导体晶片，并掺杂有至少两种属于元件周期性系统的同一组的电活性掺杂剂。
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2.发明授权Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers 失效用于生产高掺杂半导体晶片的方法和无位错高掺杂半导体晶片公开(公告)号：US07341787B2
公开(公告)日：2008-03-11
申请号：US11043574
申请日：2005-01-26
CPC分类号： C30B29/52 , C30B15/04 , C30B29/06 , C30B29/08 , H01L29/167 , Y10S438/914 , Y10T428/21
摘要： The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to a semiconductor wafer which is free of dislocations and is doped with at least two electrically active dopants which belong to the same group of the periodic system of the elements.
摘要翻译： 本发明涉及用于制造高掺杂半导体晶片的方法，其中使用至少两种具有电活性且属于元素周期系统的同一组的掺杂剂用于掺杂。 本发明还涉及一种不含位错的半导体晶片，并掺杂有至少两种属于元件周期性系统的同一组的电活性掺杂剂。
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3.发明申请Process for producing a silicon single crystal with controlled carbon content 审中-公开制备具有可控碳含量的硅单晶的方法公开(公告)号：US20060174817A1
公开(公告)日：2006-08-10
申请号：US11349707
申请日：2006-02-08
IPC分类号： H01L21/322
摘要： Process for producing a silicon single crystal with controlled carbon content, polycrystalline silicon being melted in a crucible to form a silicon melt, a stream of inert gas with a flow rate being directed onto the melting polycrystalline silicon, and the single crystal is pulled from the melt in accordance with the Czochralski method, wherein the flow rate of the inert gas stream is controlled in order to set a concentration of carbon in the melt.
摘要翻译： 用于生产具有可控碳含量的硅单晶的方法，多晶硅在坩埚中熔化以形成硅熔体，将流速指向熔融多晶硅的惰性气体流，并将单晶从 根据切克劳斯基法进行熔融，其中控制惰性气体流的流速以便设定熔体中的碳浓度。
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4.发明申请Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer 审中-公开具有外延沉积层的半导体晶片，以及用于制造半导体晶片的工艺公开(公告)号：US20060131649A1
公开(公告)日：2006-06-22
申请号：US11298012
申请日：2005-12-09
IPC分类号： H01L21/8238
CPC分类号： H01L29/36 , H01L29/0878
摘要： A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.
摘要翻译： 半导体晶片由掺杂有n型或p型掺杂剂原子的单晶硅的衬底晶片形成，其前表面和后表面包含在衬底晶片的前表面上外延沉积的层。 衬底晶片还包括从衬底晶片的前表面延伸到衬底晶片中并具有限定厚度的n + ++或p +++掺杂层。 半导体晶片通过其中n型或p型的掺杂剂原子通过衬底晶片的前表面引入衬底晶片的方法制造，从衬底晶片的前表面延伸的层中的掺杂剂浓度 从衬底晶片的水平增加到第n + +或/或P + +或/ SUP>，然后在该层上沉积外延层。
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5.发明授权Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer 有权具有外延沉积层的半导体晶片，以及用于制造半导体晶片的工艺公开(公告)号：US08449675B2
公开(公告)日：2013-05-28
申请号：US12180739
申请日：2008-07-28
IPC分类号： C30B21/02
CPC分类号： H01L29/36 , H01L29/0878
摘要： A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.
摘要翻译： 半导体晶片由掺杂有n型或p型掺杂剂原子的单晶硅的衬底晶片形成，其前表面和后表面包含在衬底晶片的前表面上外延沉积的层。 衬底晶片另外包括从衬底晶片的前表面延伸到衬底晶片中并具有限定厚度的n ++或p ++掺杂层。 半导体晶片通过其中n型或p型的掺杂剂原子通过衬底晶片的前表面引入衬底晶片的方法制造，从衬底晶片的前表面延伸的层中的掺杂剂浓度 衬底晶片从n +或p +级增加到n ++或p ++级，然后在该层上沉积外延层。
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6.发明申请Semiconductor Wafer With An Epitaxially Deposited Layer, And Process For Producing The Semiconductor Wafer 有权具有外延沉积层的半导体晶片，以及用于生产半导体晶片的工艺公开(公告)号：US20080286951A1
公开(公告)日：2008-11-20
申请号：US12180739
申请日：2008-07-28
IPC分类号： H01L21/20
CPC分类号： H01L29/36 , H01L29/0878
摘要： A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.
摘要翻译： 半导体晶片由掺杂有n型或p型掺杂剂原子的单晶硅的衬底晶片形成，其前表面和后表面包含在衬底晶片的前表面上外延沉积的层。 衬底晶片还包括从衬底晶片的前表面延伸到衬底晶片中并具有限定厚度的n + ++或p +++掺杂层。 半导体晶片通过其中n型或p型的掺杂剂原子通过衬底晶片的前表面引入衬底晶片的方法制造，从衬底晶片的前表面延伸的层中的掺杂剂浓度 从衬底晶片的水平增加到第n + +或/或P + +或/ SUP>，然后在该层上沉积外延层。
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7.发明授权Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby 有权从硅制造掺杂半导体晶片的工艺，以及由此制造的晶片公开(公告)号：US07202146B2
公开(公告)日：2007-04-10
申请号：US11199603
申请日：2005-08-09
IPC分类号： H01L21/425 , H01L21/22 , H01L29/167
CPC分类号： H01L21/324 , H01L21/26506 , H01L21/26513
摘要： A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.
摘要翻译： 含有硼，磷，砷或锑等电学活性掺杂剂的硅的掺杂半导体晶片的制造方法可另外掺入锗并具有规定的热导率，包括由硅制造单晶并进一步加工 为了形成半导体晶片，通过选择电活性掺杂剂的浓度和任选的锗浓度建立热导率。 通过该方法由硅制造的半导体晶片在热导率和电阻率方面具有特定的性质。
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8.发明申请Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby 有权从硅制造掺杂半导体晶片的工艺，以及由此制造的晶片公开(公告)号：US20060035448A1
公开(公告)日：2006-02-16
申请号：US11199603
申请日：2005-08-09
IPC分类号： H01L21/74 , H01L21/425
CPC分类号： H01L21/324 , H01L21/26506 , H01L21/26513
摘要： A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.
摘要翻译： 含有硼，磷，砷或锑等电学活性掺杂剂的硅的掺杂半导体晶片的制造方法可另外掺入锗并具有规定的热导率，包括由硅制造单晶并进一步加工 为了形成半导体晶片，通过选择电活性掺杂剂的浓度和任选的锗浓度建立热导率。 通过该方法由硅制造的半导体晶片在热导率和电阻率方面具有特定的性质。
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