THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜晶体管基板及其制造方法

    公开(公告)号:US20160260749A1

    公开(公告)日:2016-09-08

    申请号:US14997357

    申请日:2016-01-15

    Abstract: A thin film transistor substrate includes a switching element comprising a gate electrode electrically connected to a gate line extending in a first direction, an active pattern overlapping with the gate electrode, a source electrode disposed on the active pattern and electrically connected to a data line extending in a second direction crossing the first direction, and a drain electrode spaced apart from the source electrode. The thin film transistor substrate further includes an organic layer disposed on the switching element, a first electrode disposed on the organic layer, and a second electrode overlapping with the first electrode, and electrically connected to the drain electrode. A thickness of the second electrode is thicker than a thickness of the first electrode.

    Abstract translation: 薄膜晶体管基板包括开关元件,该开关元件包括电连接到沿第一方向延伸的栅极线的栅电极,与栅电极重叠的有源图案,设置在有源图案上的源极,并电连接到延伸的数据线 在与第一方向交叉的第二方向上,以及与源电极间隔开的漏电极。 薄膜晶体管基板还包括设置在开关元件上的有机层,设置在有机层上的第一电极和与第一电极重叠的第二电极,并与漏电极电连接。 第二电极的厚度比第一电极的厚度厚。

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