公开(公告)号：US20170200742A1

公开(公告)日：2017-07-13

申请号：US15247989

申请日：2016-08-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YOUNG KI SHIN ,  DAE HO KIM ,  JONG CHAN LEE ,  WOONG HEE JEONG ,  YOON HO KHANG

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/127 ,  H01L27/1222 ,  H01L27/3262 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78696 ,  H01L2227/323

Abstract: An organic light emitting diode display having a lightly doped region formed in a transistor for simplifying manufacturing process and reducing manufacturing costs is provided. The organic light emitting diode display includes: a substrate, a transistor on the substrate, and an organic light emitting diode (OLED) connected to the transistor, wherein the transistor includes a semiconductor member on the substrate, an insulating member on the semiconductor member, a source member and a drain member disposed on the semiconductor member and respectively disposed at opposite sides of the insulating member, and a gate electrode on the insulating member, wherein each of the source member and the drain member includes a plurality of layers having different impurity doping concentrations.

公开(公告)号：US20170061883A1

公开(公告)日：2017-03-02

申请号：US15018058

申请日：2016-02-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JONG CHAN LEE ,  WOONG HEE JEONG ,  DAE HO KIM ,  YOUNG KI SHIN ,  YOON HO KHANG ,  MYOUNG GEUN CHA

IPC: G09G3/3258 ,  H01L51/56 ,  H01L27/32 ,  H01L29/786 ,  G09G3/3233 ,  G09G3/3275

CPC classification number: H01L29/78621 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/0214 ,  G09G2320/0233 ,  G09G2320/0238 ,  H01L27/124 ,  H01L27/1259 ,  H01L2227/323

Abstract: A display device according to an exemplary embodiment of the present invention includes: a substrate; a plurality of transistors formed on the substrate; and a light-emitting device connected to the plurality of transistors, wherein the transistor includes a gate electrode, the plurality of transistors include a first transistor and a second transistor of which lateral wall slope angles of the gate electrode are different from each other, and the first transistor further includes a doping control member formed on a lateral wall of the gate electrode.

Abstract translation: 根据本发明的示例性实施例的显示装置包括：基板; 形成在所述基板上的多个晶体管; 以及连接到所述多个晶体管的发光器件，其中所述晶体管包括栅电极，所述多个晶体管包括第一晶体管和栅电极的侧壁倾斜角彼此不同的第二晶体管，以及 第一晶体管还包括形成在栅电极的侧壁上的掺杂控制构件。

公开(公告)号：US20170104015A1

公开(公告)日：2017-04-13

申请号：US15140725

申请日：2016-04-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JOON-HWA BAE ,  JONG CHAN LEE ,  WOONG HEE JEONG ,  IN SU HWANG

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/16

CPC classification number: H01L27/1229 ,  H01L27/124 ,  H01L27/1274 ,  H01L29/04 ,  H01L29/1604 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A manufacturing method of a thin film transistor array panel according to an exemplary embodiment of the present invention includes forming an amorphous silicon thin film on a substrate. A lower region of the amorphous silicon thin film is crystallized to form a polycrystalline silicon thin film by irradiating a laser beam with an energy density of from about 150 mj/cm2 to about 250 mj/cm2 to the amorphous silicon thin film.