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公开(公告)号:US20170061883A1
公开(公告)日:2017-03-02
申请号:US15018058
申请日:2016-02-08
发明人: JONG CHAN LEE , WOONG HEE JEONG , DAE HO KIM , YOUNG KI SHIN , YOON HO KHANG , MYOUNG GEUN CHA
IPC分类号: G09G3/3258 , H01L51/56 , H01L27/32 , H01L29/786 , G09G3/3233 , G09G3/3275
CPC分类号: H01L29/78621 , G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0214 , G09G2320/0233 , G09G2320/0238 , H01L27/124 , H01L27/1259 , H01L2227/323
摘要: A display device according to an exemplary embodiment of the present invention includes: a substrate; a plurality of transistors formed on the substrate; and a light-emitting device connected to the plurality of transistors, wherein the transistor includes a gate electrode, the plurality of transistors include a first transistor and a second transistor of which lateral wall slope angles of the gate electrode are different from each other, and the first transistor further includes a doping control member formed on a lateral wall of the gate electrode.
摘要翻译: 根据本发明的示例性实施例的显示装置包括:基板; 形成在所述基板上的多个晶体管; 以及连接到所述多个晶体管的发光器件,其中所述晶体管包括栅电极,所述多个晶体管包括第一晶体管和栅电极的侧壁倾斜角彼此不同的第二晶体管,以及 第一晶体管还包括形成在栅电极的侧壁上的掺杂控制构件。
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2.
公开(公告)号:US20160308063A1
公开(公告)日:2016-10-20
申请号:US15194841
申请日:2016-06-28
发明人: YONG SU LEE , YOON HO KHANG , DONG JO KIM , HYUN JAE NA , SANG HO PARK , SE HWAN YU , CHONG SUP CHANG , DAE HO KIM , JAE NEUNG KIM , MYOUNG GEUN CHA , SANG GAB KIM , YU-GWANG JEONG
IPC分类号: H01L29/786 , H01L27/12 , H01L29/417
CPC分类号: H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L27/3262 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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3.
公开(公告)号:US20180069129A1
公开(公告)日:2018-03-08
申请号:US15704063
申请日:2017-09-14
发明人: YONG SU LEE , YOON HO KHANG , DONG JO KIM , HYUN JAE NA , SANG HO PARK , SE HWAN YU , CHONG SUP CHANG , DAE HO KIM , JAE NEUNG KIM , MYOUNG GEUN CHA , SANG GAB KIM , YU-GWANG JEONG
IPC分类号: H01L29/786 , H01L27/12 , H01L29/417 , H01L29/66
CPC分类号: H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L27/3262 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号:US20170200742A1
公开(公告)日:2017-07-13
申请号:US15247989
申请日:2016-08-26
发明人: YOUNG KI SHIN , DAE HO KIM , JONG CHAN LEE , WOONG HEE JEONG , YOON HO KHANG
IPC分类号: H01L27/12 , H01L29/786
CPC分类号: H01L27/127 , H01L27/1222 , H01L27/3262 , H01L29/78621 , H01L29/78675 , H01L29/78696 , H01L2227/323
摘要: An organic light emitting diode display having a lightly doped region formed in a transistor for simplifying manufacturing process and reducing manufacturing costs is provided. The organic light emitting diode display includes: a substrate, a transistor on the substrate, and an organic light emitting diode (OLED) connected to the transistor, wherein the transistor includes a semiconductor member on the substrate, an insulating member on the semiconductor member, a source member and a drain member disposed on the semiconductor member and respectively disposed at opposite sides of the insulating member, and a gate electrode on the insulating member, wherein each of the source member and the drain member includes a plurality of layers having different impurity doping concentrations.
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