公开(公告)号：US09978907B2

公开(公告)日：2018-05-22

申请号：US15147039

申请日：2016-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Sub Kim ,  Dong Hyun Lee ,  Jin Sub Lee ,  Kyung Wook Hwang ,  In Su Shin ,  Eui Joon Yoon ,  Gun Do Lee ,  Jeong Hwan Jang

IPC: H01L33/08 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0≤x+y≤1, 0≤y