公开(公告)号：US20210366344A1

公开(公告)日：2021-11-25

申请号：US17090720

申请日：2020-11-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： KYUNGHOON CHUNG ,  JAESUNG KANG ,  JIHYUN LEE ,  JEONGWOO LIM ,  YUNSEOK JANG ,  JAEWON CHOI

IPC分类号： G09G3/20 ,  H03F3/45

摘要： An operational amplifier includes an input stage with a first main input unit, a first auxiliary input unit, a second main input unit and a second auxiliary input unit, an amplification stage with a first current mirror receiving currents from the first main input unit and the first auxiliary input unit, and a second current mirror receiving currents from the second main input unit and the second auxiliary input unit, an output stage receiving voltages from the first current mirror and the second current mirror, a voltage storage unit storing an intermediate voltage based on an output signal generated by the output stage during at least one of a first operation period and a second operation period, and a switching unit that differently controls a first feedback path between the output stage and the input stage and a second feedback path between the output stage to the voltage storage unit in accordance with the first operation period and the second operation period.

公开(公告)号：US20240243010A1

公开(公告)日：2024-07-18

申请号：US18403204

申请日：2024-01-03

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JIHYUN LEE ,  EUN HYEA KO ,  SOYOUNG LEE ,  THANH CUONG NGUYEN ,  HOON HAN ,  BYUNGKEUN HWANG ,  HIROYUKI UCHIUZOU ,  KIYOSHI MURATA ,  TOMOHARU YOSHINO ,  YOUNJOUNG CHO

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/76831 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/76844

摘要： An inhibitor for selectively depositing a thin film may include a compound represented by Formula 1 below:




where, R1 is an aldehyde group, an amino group, a carbonyl group, a ketone group, a nitrile group, an acyl halide group, a substituted or unsubstituted C2 to C20 alkenyl group, or a substituted or unsubstituted C2 to C20 alkynyl group, R2 is a halogen atom, a substituted or unsubstituted C1 to C10 alkylhalide group, a substituted or unsubstituted C4 to C10 tertiary alkyl group, or a substituted or unsubstituted C1 to C10 alkylthio group, and n is an integer from 1 to 5. The inhibitor is adsorbed to a surface of a first layer but not adsorbed to a surface of a second layer. The first layer may include a metal-based material, and the second layer is different from the first layer and may include an insulating material.

公开(公告)号：US20240172371A1

公开(公告)日：2024-05-23

申请号：US18226568

申请日：2023-07-26

申请人： Samsung Electronics Co., Ltd.

发明人： JIHYUN LEE ,  HANSUNG RYU ,  YONG SUNG PARK ,  JUNHO LEE

IPC分类号： H05K3/34 ,  H01L21/48 ,  H01L23/498 ,  H01L23/522

CPC分类号： H05K3/3463 ,  H01L21/4853 ,  H01L23/49816 ,  H01L23/5226

摘要： A semiconductor package includes a first structure, a second structure, a plurality of first connection members including SnBi; a plurality of second connection members including SAC (Sn, Ag and Cu). Each first connection member of the plurality of first connection members has a first surface and a second surface opposite each other, and the first surface of each first connection member of the plurality of first connection members is bonded to the first structure. A third surface of each second connection member of a plurality of second connection members is bonded to a corresponding second surface of a respective first connection member, and for each second connection member, a fourth surface of the second connection member that is opposite the third surface of the second connection member is bonded to the second structure. The third surface of each second connection member is flat, and a diameter of each second connection member decreases in a direction receding from the third surface of each second connection member.