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公开(公告)号:US11195583B2
公开(公告)日:2021-12-07
申请号:US16736881
申请日:2020-01-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jihong Kim , Kyungduk Lee , Young-Seop Shim , Kirock Kwon , Myoung Seok Kim
Abstract: A method of accessing a nonvolatile memory device which includes a memory block where semiconductor layers including word lines are stacked includes receiving a write request for the memory block, determining whether the write request corresponds to one or more leading word lines, programming, in response to the write request determined as corresponding to the leading word lines, memory cells connected thereto in a first program mode, and programming, when the write request is determined as corresponding to a following word line different from the leading word lines, memory cells connected to the following word line in a second program mode. The second program mode is performed with a second program parameter including at least one of a number of program pulses, a number of program verify pulses, a program start voltage, and a program end voltage that is different from a corresponding first parameter of the first program mode.
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公开(公告)号:US20230376247A1
公开(公告)日:2023-11-23
申请号:US18048696
申请日:2022-10-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwangjin Lee , Kirock Kwon , Younsoo Cheon
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0656 , G06F3/0613 , G06F3/0683
Abstract: A host system includes a volatile memory device configured to store first temporary data, an embedded storage device configured to store second temporary data, and a host device configured to determine whether to transmit new temporary data to the nonvolatile memory device for storage therein as the first temporary data or to the embedded storage device for storage therein as the second temporary data in response to a detection signal of an event associated with the new temporary data. The embedded storage device may include at least one nonvolatile memory device having a buffer area, in which the second temporary data is stored, and a user area, and a controller configured to control the at least one nonvolatile memory device such that the second temporary data in the buffer area is copied to the user area in response to a flush request of the host device.
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公开(公告)号:US20250118371A1
公开(公告)日:2025-04-10
申请号:US18666874
申请日:2024-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sewoong Lee , Kwangjin Lee , Kirock Kwon , Kyungduk Lee , Sangsoo Cha , Younsoo Cheon
Abstract: Provided is a storage device including a memory device including a plurality of memory blocks each including a plurality of memory cells, a controller configured to control a program operation of the memory device in response to a write request received from a host, and a temperature sensor configured to measure an internal temperature, wherein the controller is further configured to, based on a first temperature measured by the temperature sensor, activate one of the plurality of memory blocks as a risk block and then control a high-reliability program operation using the risk block, or activate one of the plurality of memory blocks as a first normal block and then control a normal program operation using the first normal block.
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公开(公告)号:US20250103233A1
公开(公告)日:2025-03-27
申请号:US18741452
申请日:2024-06-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kwang-Jin Lee , Kirock Kwon , Chanho Jung
IPC: G06F3/06
Abstract: A storage device includes a non-volatile memory and a storage controller. The non-volatile memory includes a plurality of storage regions, and the plurality of storage regions include a first storage region and a second storage region which have different types. The storage controller programs data from a host device in the first storage region, based on safety level information of the host device and remaining storage region information of the non-volatile memory. Based on the safety level information and the remaining storage region information, the storage controller migrates the data programmed in the first storage region to the second storage region or returns the data migrated to the second storage region to the first storage region.
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