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1.发明公开公开(公告)号：US20240055030A1
公开(公告)日：2024-02-15
申请号：US18204972
申请日：2023-06-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Younsoo Cheon , Jihwa Lee , Kyungduk Lee
CPC classification number: G11C7/04 , G11C11/5642 , G11C11/5628
Abstract: A storage device including a non-volatile memory for storing data, a temperature sensor having resistance that changes according to temperature of the temperature sensor, and a temperature measurement circuit including a plurality of transistors, which are turned on or off based on a current of the temperature sensor and have different threshold voltages from one another. The temperature management circuit may be configured to apply a current to the temperature sensor and generate information indicating the temperature of the temperature sensor or indicating damage to the temperature sensor based on an output current obtained from the plurality of transistors.
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公开(公告)号：US11232008B2
公开(公告)日：2022-01-25
申请号：US16729743
申请日：2019-12-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Younsoo Cheon , Jihwa Lee
Abstract: A method of operating a storage device including a plurality of nonvolatile memories, each of the plurality of nonvolatile memories including a temperature sensor, includes checking whether a predetermined temperature check cycle for the plurality of nonvolatile memories has been reached, monitoring, in response to the checking result, temperature information of at least some of the plurality of nonvolatile memories using the temperature sensor, obtaining standing time information of the plurality of nonvolatile memories by applying a temperature acceleration condition based on the monitored temperature information, and changing at least one of a plurality of driving parameters required for operating each of the plurality of nonvolatile memories based on at least one of the monitored temperature information and the obtained standing time information.
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3.发明公开公开(公告)号：US20230376247A1
公开(公告)日：2023-11-23
申请号：US18048696
申请日：2022-10-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwangjin Lee , Kirock Kwon , Younsoo Cheon
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0656 , G06F3/0613 , G06F3/0683
Abstract: A host system includes a volatile memory device configured to store first temporary data, an embedded storage device configured to store second temporary data, and a host device configured to determine whether to transmit new temporary data to the nonvolatile memory device for storage therein as the first temporary data or to the embedded storage device for storage therein as the second temporary data in response to a detection signal of an event associated with the new temporary data. The embedded storage device may include at least one nonvolatile memory device having a buffer area, in which the second temporary data is stored, and a user area, and a controller configured to control the at least one nonvolatile memory device such that the second temporary data in the buffer area is copied to the user area in response to a flush request of the host device.
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Patent Agency Ranking
4.发明授权公开(公告)号：US11868645B2
公开(公告)日：2024-01-09
申请号：US17240152
申请日：2021-04-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hosung Ahn , Younsoo Cheon
IPC: G06F3/06
CPC classification number: G06F3/0655 , G06F3/0604 , G06F3/064 , G06F3/0679
Abstract: A method of operating a controller for controlling a memory device that comprises a plurality of memory cell blocks including outputting block address information based on reliability information for each of the memory cell blocks, providing a patrol read command to the memory device, and controlling the memory device to perform the patrol read operation in response to the patrol read command wherein the block address information comprises an order of the patrol read operation for the memory cell blocks based on the reliability information may be provided.
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公开(公告)号：US11748223B2
公开(公告)日：2023-09-05
申请号：US17563662
申请日：2021-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Younsoo Cheon , Jihwa Lee
CPC classification number: G06F11/3058 , G06F3/0614 , G06F11/076 , G06F11/3037 , G06F12/0246 , G06F12/0882
Abstract: A method of operating a storage device including a plurality of nonvolatile memories, each of the plurality of nonvolatile memories including a temperature sensor, includes checking whether a predetermined temperature check cycle for the plurality of nonvolatile memories has been reached, monitoring, in response to the checking result, temperature information of at least some of the plurality of nonvolatile memories using the temperature sensor, obtaining standing time information of the plurality of nonvolatile memories by applying a temperature acceleration condition based on the monitored temperature information, and changing at least one of a plurality of driving parameters required for operating each of the plurality of nonvolatile memories based on at least one of the monitored temperature information and the obtained standing time information.
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公开(公告)号：US12147706B2
公开(公告)日：2024-11-19
申请号：US17932073
申请日：2022-09-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungduk Lee , Younsoo Cheon
IPC: G06F3/06
Abstract: A storage device includes nonvolatile memories each including an internal temperature sensor; a memory controller configured having a plurality of operation commands defined for different temperature and an external temperature sensor. The memory controller obtains an external temperature value from the external temperature sensor in a first cycle, obtains an internal temperature value of the internal temperature sensor in a second cycle different from the first cycle, determines a temperature range of a target nonvolatile memory based on the external temperature value when a difference between the external temperature value and the internal temperature value is equal to or less than a first threshold value, to determine the temperature range based on the internal temperature value when the difference exceeds the first threshold, and to provide an operation command corresponding to the temperature range to the target nonvolatile memory.
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公开(公告)号：US11735278B2
公开(公告)日：2023-08-22
申请号：US17535881
申请日：2021-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Sewoong Lee , Younsoo Cheon
CPC classification number: G11C16/349 , G11C16/26
Abstract: A method of operating a controller includes randomly transmitting a first command to a non-volatile memory device upon a read request from a host; receiving first read data corresponding to the first command from the non-volatile memory device; determining whether the number of first error bits of the first read data is greater than a first reference value; determining whether the number of first error bits is greater than a second reference value, when the number of first error bits is not greater than the first reference value; storing a target wordline in a health buffer, when the number of first error bits is greater than the second reference value; periodically transmitting a second command to the non-volatile memory device; and receiving second read data corresponding to the second command from the non-volatile memory device.
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公开(公告)号：US20220121544A1
公开(公告)日：2022-04-21
申请号：US17563662
申请日：2021-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyungduk Lee , Younsoo Cheon , Jihwa Lee
IPC: G06F11/30 , G06F12/0882 , G06F12/02 , G06F11/07 , G06F3/06
Abstract: A method of operating a storage device including a plurality of nonvolatile memories, each of the plurality of nonvolatile memories including a temperature sensor, includes checking whether a predetermined temperature check cycle for the plurality of nonvolatile memories has been reached, monitoring, in response to the checking result, temperature information of at least some of the plurality of nonvolatile memories using the temperature sensor, obtaining standing time information of the plurality of nonvolatile memories by applying a temperature acceleration condition based on the monitored temperature information, and changing at least one of a plurality of driving parameters required for operating each of the plurality of nonvolatile memories based on at least one of the monitored temperature information and the obtained standing time information.
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