-
公开(公告)号：US11735278B2
公开(公告)日：2023-08-22
申请号：US17535881
申请日：2021-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Sewoong Lee , Younsoo Cheon
CPC classification number: G11C16/349 , G11C16/26
Abstract: A method of operating a controller includes randomly transmitting a first command to a non-volatile memory device upon a read request from a host; receiving first read data corresponding to the first command from the non-volatile memory device; determining whether the number of first error bits of the first read data is greater than a first reference value; determining whether the number of first error bits is greater than a second reference value, when the number of first error bits is not greater than the first reference value; storing a target wordline in a health buffer, when the number of first error bits is greater than the second reference value; periodically transmitting a second command to the non-volatile memory device; and receiving second read data corresponding to the second command from the non-volatile memory device.
-
公开(公告)号：US11862263B2
公开(公告)日：2024-01-02
申请号：US17729048
申请日：2022-04-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Suyong Jang
CPC classification number: G11C16/3495 , G11C16/16 , G11C16/26 , G11C29/72
Abstract: A method of operating a storage device including a non-volatile memory includes storing program and erase counts of the non-volatile memory as metadata in units of super blocks, wherein each of the super blocks includes a pre-defined number of blocks of the non-volatile memory, performing a read operation on a first block included in a first super block based on a first read level, storing the first read level as a history read level of the first super block in a history buffer when the read operation on the first block is successful, receiving a read request for a second block of the first super block and an address of the second block from a host, and performing a read operation on the second block based on the history read level stored in the history buffer. The pre-defined number is at least two.
-
公开(公告)号：US20210166774A1
公开(公告)日：2021-06-03
申请号：US17038416
申请日：2020-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Suyong Jang
Abstract: A method of operating a storage device including a non-volatile memory includes storing program and erase counts of the non-volatile memory as metadata in units of super blocks, wherein each of the super blocks includes a pre-defined number of blocks of the non-volatile memory, performing a read operation on a first block included in a first super block based on a first read level, storing the first read level as a history read level of the first super block in a history buffer when the read operation on the first block is successful, receiving a read request for a second block of the first super block and an address of the second block from a host, and performing a read operation on the second block based on the history read level stored in the history buffer. The pre-defined number is at least two.
-
公开(公告)号：US20250118371A1
公开(公告)日：2025-04-10
申请号：US18666874
申请日：2024-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sewoong Lee , Kwangjin Lee , Kirock Kwon , Kyungduk Lee , Sangsoo Cha , Younsoo Cheon
Abstract: Provided is a storage device including a memory device including a plurality of memory blocks each including a plurality of memory cells, a controller configured to control a program operation of the memory device in response to a write request received from a host, and a temperature sensor configured to measure an internal temperature, wherein the controller is further configured to, based on a first temperature measured by the temperature sensor, activate one of the plurality of memory blocks as a risk block and then control a high-reliability program operation using the risk block, or activate one of the plurality of memory blocks as a first normal block and then control a normal program operation using the first normal block.
-
Patent Agency Ranking
5.发明授权公开(公告)号：US11977735B2
公开(公告)日：2024-05-07
申请号：US17308165
申请日：2021-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangsoo Cha
IPC: G06F3/06
CPC classification number: G06F3/0608 , G06F3/0655 , G06F3/0679
Abstract: An operating method of a storage device includes detecting whether a reclaim event has occurred on a source memory area including a plurality of memory areas, setting a reclaim priority value to each of the plurality of memory areas, and performing a reclaim operation on the source memory area according to the reclaim priority value of each of the plurality of memory areas. The reclaim operation moves data stored in the source memory area to a destination memory area.
-
公开(公告)号：US20250037779A1
公开(公告)日：2025-01-30
申请号：US18645810
申请日：2024-04-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Minjeong Kwon
IPC: G11C29/12
Abstract: A memory controller includes a health grade determining circuit to determine a health grade of a memory block based on a combination of an error detecting result of data read from at least one page of the block and block information related to a degree of degradation of the block, and an IO ratio setting circuit. The IO ratio setting circuit sets, according to the determined health grade, an IO ratio between a host IO operation and an internal IO operation. The host IO operation exchanges data with the memory device in response to a request from a host and the internal IO operation exchanges data with the memory device in relation to a background operation. The memory controller performs the host IO operation and the internal IO operation with the memory device according to the set IO ratio during a period in which the background operation is performed.
-
公开(公告)号：US20220254422A1
公开(公告)日：2022-08-11
申请号：US17729048
申请日：2022-04-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Suyong Jang
Abstract: A method of operating a storage device including a non-volatile memory includes storing program and erase counts of the non-volatile memory as metadata in units of super blocks, wherein each of the super blocks includes a pre-defined number of blocks of the non-volatile memory, performing a read operation on a first block included in a first super block based on a first read level, storing the first read level as a history read level of the first super block in a history buffer when the read operation on the first block is successful, receiving a read request for a second block of the first super block and an address of the second block from a host, and performing a read operation on the second block based on the history read level stored in the history buffer. The pre-defined number is at least two.
-
公开(公告)号：US11335423B2
公开(公告)日：2022-05-17
申请号：US17038416
申请日：2020-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Suyong Jang
Abstract: A method of operating a storage device including a non-volatile memory includes storing program and erase counts of the non-volatile memory as metadata in units of super blocks, wherein each of the super blocks includes a pre-defined number of blocks of the non-volatile memory, performing a read operation on a first block included in a first super block based on a first read level, storing the first read level as a history read level of the first super block in a history buffer when the read operation on the first block is successful, receiving a read request for a second block of the first super block and an address of the second block from a host, and performing a read operation on the second block based on the history read level stored in the history buffer. The pre-defined number is at least two.
-
9.发明申请公开(公告)号：US20210357128A1
公开(公告)日：2021-11-18
申请号：US17308165
申请日：2021-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangsoo Cha
IPC: G06F3/06
Abstract: An operating method of a storage device includes detecting whether a reclaim event has occurred on a source memory area including a plurality of memory areas, setting a reclaim priority value to each of the plurality of memory areas, and performing a reclaim operation on the source memory area according to the reclaim priority value of each of the plurality of memory areas. The reclaim operation moves data stored in the source memory area to a destination memory area.
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.017 seconds)
