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公开(公告)号：US20170301381A1
公开(公告)日：2017-10-19
申请号：US15436234
申请日：2017-02-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun SEOMUN , Insub Shin , Kyungtae Do , JungYun Choi
CPC classification number: G11C7/1012 , G11C5/143 , G11C7/10 , G11C7/222
Abstract: Voltage monitors include a predelay cell having an input responsive to a first clock signal. This cell is configured to generate a predelayed clock signal at an output thereof. A serially-connected string of data delay cells is provided, which has an input responsive to the predelayed clock signal. A serially-connected string of clock delay cells is provided, which has an input responsive to a second clock signal that is synchronized to the first clock signal. A plurality latches are provided. The latches have respective data inputs, which are responsive to first periodic signals generated at respective outputs of the serially-connected string of data delay cells, and respective clock/sync terminals, which are responsive to second periodic signals generated at respective outputs of the serially-connected string of clock delay cells. The latches enable loading of a delay code value, which indicates power supply voltage variation.
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公开(公告)号：US09459680B2
公开(公告)日：2016-10-04
申请号：US13948691
申请日：2013-07-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyungock Kim , Wook Kim , Jun Seomun , Chungki Oh , JaeHan Jeon , Kyungtae Do , JungYun Choi , Hyosig Won , Kee Sup Kim
CPC classification number: G06F1/3206 , G05D23/1919 , G06F1/20 , G06F1/324 , Y02D10/126
Abstract: A temperature control method of a semiconductor device is provided. The temperature control method includes detecting a temperature of the semiconductor device; activating a reverse body biasing operation in which a body bias voltage applied to a function block of the semiconductor device is regulated, when the detected temperature is greater than a first temperature level; and activating a thermal throttling operation in which at least one of a frequency of a driving clock provided to a function block of the semiconductor device and a driving voltage applied to the function block of the semiconductor device is regulated, when the detected temperature is greater than a second temperature level that is different than the first temperature level.
Abstract translation: 提供了一种半导体器件的温度控制方法。 温度控制方法包括检测半导体器件的温度; 当检测到的温度大于第一温度水平时，激活施加到半导体器件的功能块的体偏置电压的反向体偏置操作; 以及激活热调节操作，其中当检测到的温度大于所述热节流操作时，提供给所述半导体器件的功能块的驱动时钟的频率中的至少一个和施加到所述半导体器件的功能块的驱动电压被调节 与第一温度水平不同的第二温度水平。
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公开(公告)号：US09984732B2
公开(公告)日：2018-05-29
申请号：US15436234
申请日：2017-02-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jun Seomun , Insub Shin , Kyungtae Do , JungYun Choi
CPC classification number: G11C7/1012 , G11C5/143 , G11C7/10 , G11C7/222
Abstract: Voltage monitors include a predelay cell having an input responsive to a first clock signal. This cell is configured to generate a predelayed clock signal at an output thereof. A serially-connected string of data delay cells is provided, which has an input responsive to the predelayed clock signal. A serially-connected string of clock delay cells is provided, which has an input responsive to a second clock signal that is synchronized to the first clock signal. A plurality latches are provided. The latches have respective data inputs, which are responsive to first periodic signals generated at respective outputs of the serially-connected string of data delay cells, and respective clock/sync terminals, which are responsive to second periodic signals generated at respective outputs of the serially-connected string of clock delay cells. The latches enable loading of a delay code value, which indicates power supply voltage variation.
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