公开(公告)号：US20170194324A1

公开(公告)日：2017-07-06

申请号：US15461934

申请日：2017-03-17

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-Gun You ,  Se-Wan PARK ,  Baik-Min SUNG ,  Bo-Cheol JEONG

IPC分类号： H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

摘要： Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US20160380075A1

公开(公告)日：2016-12-29

申请号：US15170230

申请日：2016-06-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jae-Yup CHUNG ,  Hyun-Jo KIM ,  Seong-Yul PARK ,  Se-Wan PARK ,  Jong-Mil YOUN ,  Jeong-Hyo LEE ,  Hwa-Sung RHEE ,  Hee-Don JEONG ,  Ji-Yong HA

IPC分类号： H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L27/092 ,  H01L29/161

CPC分类号： H01L29/66545 ,  H01L21/76229 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7848 ,  H01L29/7854 ,  H01L29/7855

摘要： A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.

摘要翻译： 半导体器件包括鳍状图案，其包括彼此相对的第一短边和第二短边，与第一短边接触的第一沟槽，与第二短边接触的第二沟槽，第一场绝缘 所述第一场绝缘膜包括从所述第一短边顺序布置的第一部分和第二部分，并且所述第一部分的高度不同于所述第二部分的高度;第二场绝缘膜， 第二沟槽和第一场绝缘膜的第一部分上的第一伪栅极。

公开(公告)号：US20170162670A1

公开(公告)日：2017-06-08

申请号：US15438868

申请日：2017-02-22

申请人： Samsung Electronics Co. Ltd.

发明人： Jung-Gun You ,  Se-Wan PARK ,  Seung-Woo DO ,  In-Won PARK ,  Sug-Hyun SUNG

IPC分类号： H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L29/78

CPC分类号： H01L29/66545 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/76224 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/7848 ,  H01L29/785

摘要： A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.