公开(公告)号：US20230274952A1

公开(公告)日：2023-08-31

申请号：US18049954

申请日：2022-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： WONSU LEE ,  Kimoon LEE ,  Seungjum LEE ,  Jong san CHANG ,  Joungwoo HAN

IPC: H01L21/67 ,  H05H1/24 ,  F23C13/00 ,  F23J15/04 ,  F23J15/06 ,  F23J15/08 ,  B01D53/14 ,  B01D53/18 ,  B01D53/86 ,  B01D53/32 ,  B01D53/75 ,  B01D45/16

CPC classification number: H01L21/67017 ,  H05H1/2406 ,  F23C13/00 ,  F23J15/04 ,  F23J15/06 ,  F23J15/08 ,  B01D53/1493 ,  B01D53/1406 ,  B01D53/1431 ,  B01D53/18 ,  B01D53/869 ,  B01D53/32 ,  B01D53/75 ,  B01D45/16 ,  H05H2245/17 ,  H05H2242/10 ,  F23J2219/40 ,  F23G2204/201 ,  F23G2202/60 ,  B01D2252/103 ,  B01D2259/818

Abstract: A gas treatment system includes a first scrubber, a regenerative catalytic oxidizer (RCO) that treats gas that passes through the first scrubber, a second scrubber that treats the gas that passed through the regenerative catalytic oxidizer, and a dielectric barrier discharge (DBD) plasma reactor that treats the gas that passed through the second scrubber. The regenerative catalytic oxidizer includes a two-bed regenerative catalytic reactor.